marking code 11s
Abstract: MARKING CODE 21S BF543
Text: BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration
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BF543
VPS05161
marking code 11s
MARKING CODE 21S
BF543
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BF999
Abstract: triode sot23
Text: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S
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BF999
VPS05161
BF999
triode sot23
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BF999
Abstract: triode sot23
Text: BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S - - Package
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BF999
BF999
triode sot23
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marking code BC
Abstract: No abstract text available
Text: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability
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Si5445DC
Si5445DC-T1
08-Apr-05
marking code BC
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2 a diode
Abstract: Si5445DC Si5445DC-T1 71063 marking code BC
Text: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability
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Si5445DC
Si5445DC-T1
S-21251--Rev.
05-Aug-02
2 a diode
71063
marking code BC
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VISHAY BC 047
Abstract: Si5445DC Si5445DC-T1
Text: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability
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Si5445DC
Si5445DC-T1
18-Jul-08
VISHAY BC 047
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marking code BC
Abstract: Si5445DC
Text: Si5445DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BC XX
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Si5445DC
S-63999--Rev.
04-Oct-99
marking code BC
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marking code BC
Abstract: No abstract text available
Text: Si5445DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 S 1206-8 ChipFET 1 D D G D D D D G Marking Code BC XX S
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Si5445DC
S-63999--Rev.
04-Oct-99
marking code BC
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage
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BCV62
BCV62A
BCV62C
BCV62B
BCV61
BCV61A
BCV61B
BCV61C
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a/TDA 8309
Abstract: CMZ5928B CMZ5920B CMZ5915B
Text: LT8309 Secondary-Side Synchronous Rectifier Driver Features Description Works with DCM and BCM/CrCM Conduction Mode Flyback Topologies n V : 4.5V to 40V CC n Supports Up to 150V MOSFETs n 26ns Turn-Off Propagation Delay n Accurate Minimum On and Off Timers for Reliable
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LT8309
OT-23
LT3573/LT3574/
LT3575
LT3757A/LT3759/
LT3758
0V/100V
LT8302
com/LT8309
a/TDA 8309
CMZ5928B
CMZ5920B
CMZ5915B
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K2057
Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
Text: 2003-5 BCE0017A PRODUCT GUIDE Power MOSFETs 2003 http://www.semicon.toshiba.co.jp/eng 2 C 1 2 3 4 O N T E N Features and Structure New Power MOSFET Products Selection Guide Power MOSFET Characteristics 1. SOP-8 Series 2. VS-6 / 8 Series, PS-8 Series 3. TFP Thin Flat Package Series
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BCE0017A
2SK2610)
2SK794)
K2057
toshiba k2057
tpc8107 equivalent
2SK2313 equivalent
2SK794
2sK2750 equivalent
2SK2996 equivalent
2SK1379
2SK2610 equivalent
2SK3662
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Untitled
Abstract: No abstract text available
Text: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO
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BCV62
BCV62B
BCV61
BCV61A
BCV61B
BCV61C
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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ss8050 equivalent
Abstract: hfc0100 flyback converter DC/DC 400V
Text: MP4700 High-Brightness, BCM, Low Side Buck White LED Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP4700 is a high-efficiency step-down converter designed to drive high-brightness light emitting diodes. • The MP4700 drives an external MOSFET in
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MP4700
MP4700
300mV
MS-012,
ss8050 equivalent
hfc0100
flyback converter DC/DC 400V
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Mosfet
Abstract: No abstract text available
Text: SSF3056C 30V Complementary MOSFET Preliminary Main Product Characteristics NMOS PMOS D1 S1 NMOS VDSS 30V -30V D1 G1 D2 S2 PMOS RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A D2 G2 -4.5A Schematic Diagram DFN2X3-8L Features and Benefits Advanced trench MOSFET process technology
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SSF3056C
37mohm
68mohm
3056C
3000pcs
10pcs
30000pcs
120000pcs
Mosfet
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Untitled
Abstract: No abstract text available
Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver
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CMNDM8001
OT-953
OT-953
100mA
25-January
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Untitled
Abstract: No abstract text available
Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver
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CMNDM8001
CMNDM8001
OT-953
OT-953
22-August
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Diodes Incorporated 17-33
Abstract: DS-33010 complementary MOSFET sot89 BCX6825TA
Text: A Product Line of Diodes Incorporated BCX6825 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 20V High current capability Maximum Continuous Current IC = 1A Low saturation voltage VCE sat < 500mV @ 1A
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BCX6825
500mV
BCX69
AEC-Q101
J-STD-020
BCX6825
DS33010
Diodes Incorporated 17-33
DS-33010
complementary MOSFET sot89
BCX6825TA
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated BCX6825 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 20V High current capability Maximum Continuous Current IC = 1A Low saturation voltage VCE sat < 500mV @ 1A
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BCX6825
500mV
BCX69
AEC-Q101
J-STD-020
DS33010
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SMD Marking Code 43a
Abstract: BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF
Text: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA
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BC640;
BCP53;
BCX53
BC640
BCP53
SC-43A
SC-73
SC-62
O-243
SMD Marking Code 43a
BC640 SPICE model
transistor C640 to92
marking code DG SMD Transistor
TRANSISTOR SMD MARKING CODE 723
BC640 smd
A2 SMD CODE MARKING SOT89
TRANSISTOR SMD MARKING CODE 9339
BC640,116
TRANSISTOR SMD MARKING CODE LF
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Untitled
Abstract: No abstract text available
Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver
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CMNDM8001
OT-953
100mA
22-August
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marking code BC
Abstract: No abstract text available
Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver
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CMNDM8001
OT-953
35GSSF,
100mA
marking code BC
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em 234 stepper
Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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O01ED0
H1-O01ED0-0106030ND
em 234 stepper
2SC5586 equivalent
8002 1018 AUDIO amplifier
2SC5586
2SC5487
voltage doubler bridge
varistor 560-2
2sa2003
se125n
SE090
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Untitled
Abstract: No abstract text available
Text: SO T4 57 PMN40UPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMN40UPEA
OT457
SC-74)
AEC-Q101
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