MOSFET MARKING JB Search Results

MOSFET MARKING JB Result Highlights (5)

Part	Manufacturer	Description
ICL7667MJA/883B	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA)
ICL7667MTV/883B	Rochester Electronics LLC	ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC)
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E

MOSFET MARKING JB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SI5855DC-T1-E3 Abstract: Si5853DC Si5855DC Si5855DC-T1-GE3 7223-2 Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)	Original	Si5855DC Si5853DC 2002/95/EC 18-Jul-08 SI5855DC-T1-E3 Si5855DC-T1-GE3 7223-2	PDF
Contextual Info: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr	Original	Si5858DU 12-Sep-05	PDF
marking code jb Abstract: mosfet marking jb 5193-1 Contextual Info: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr	Original	Si5858DU Si5858DU-T1 51931--Rev. 12-Sep-05 marking code jb mosfet marking jb 5193-1	PDF
Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)	Original	Si5855DC Si5853DC 2002/95/EC Si5855DCtrademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si5858DU-T1-GE3 Abstract: si5858 Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5858DU 2002/95/EC 18-Jul-08 Si5858DU-T1-GE3 si5858	PDF
Contextual Info: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr	Original	Si5858DU 08-Apr-05	PDF
Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)	Original	Si5855DC Si5853DC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Marking Code JB Abstract: Si5858DU-T1-GE3 C1B7 Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free • LITTLE FOOT Plus Power MOSFET	Original	Si5858DU 18-Jul-08 Marking Code JB Si5858DU-T1-GE3 C1B7	PDF
Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)	Original	Si5855DC Si5853DC 2002/95/EC Si5855DChay 11-Mar-11	PDF
IDTP9090 Contextual Info: High and Low Side N-Channel Gate Driver Product Datasheet IDTP9090 Features Description • Input Voltage Range: 4.5 to 5.5 • Output Voltage Range: Control Range 0-30V  Peak MOSFET Drive current into 3nF • LGDRV Sink 3A  LGDRV Source 1A  UGDRV Sink	Original	IDTP9090 IDTP9090	PDF
Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5858DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5858DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5858DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Mosfet MARKING A1 Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5858DU 2002/95/EC 11-Mar-11 Mosfet MARKING A1	PDF

mosfet marking jb Abstract: Marking Code JB Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky	Original	Si5855DC Si5853DC Si5855DC-T1 Si5855DC-T1--E3 S-40932--Rev. 17-May-04 mosfet marking jb Marking Code JB	PDF
marking code jb Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5858DU 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code jb	PDF
Contextual Info: Si5855DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = - 4.5 V - 3.6 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky D Si5853DC Pin Compatible - 20 0.160 @ VGS = - 2.5 V	Original	Si5855DC Si5853DC Si5855DC-T1 S-31406--Rev. 07-Jul-03	PDF
Contextual Info: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the	Original	FDZ7064S FDZ7064S	PDF
marking JB SCHOTTKY BARRIER DIODE Abstract: FDZ7064N FDZ7064S mosfet marking jb Contextual Info: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the	Original	FDZ7064S FDZ7064S marking JB SCHOTTKY BARRIER DIODE FDZ7064N mosfet marking jb	PDF
Marking Code JB Abstract: SI5855DC-T1 SI5855DC-T1-E3 Si5855DC Si5853DC Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky	Original	Si5855DC Si5853DC Si5855DC-T1 Si5855DC-T1--E3 08-Apr-05 Marking Code JB SI5855DC-T1-E3	PDF
Marking Code JB Abstract: SI5855DC-T1-E3 Si5853DC Si5855DC Si5855DC-T1 7223-2 Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky	Original	Si5855DC Si5853DC Si5855DC-T1 Si5855DC-T1--E3 18-Jul-08 Marking Code JB SI5855DC-T1-E3 7223-2	PDF
Contextual Info: UCC27322-EP www.ti.com SLUSAA1C – SEPTEMBER 2010 – REVISED MARCH 2013 SINGLE 9-A HIGH-SPEED LOW-SIDE MOSFET DRIVER WITH ENABLE Check for Samples: UCC27322-EP FEATURES 1 • 2 • • • • • • • Industry-Standard Pinout With Addition of Enable Function	Original	UCC27322-EP 20-ns 15-ns 10-nF	PDF
Contextual Info: IRSM807-105MH Half-Bridge IPM for Small Appliance Motor Drive Applications 10A, 500V Description IRSM807-105MH is a 10A, 500V half-bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high performance half-bridge topology in	Original	IRSM807-105MH IRSM807-105MH DT04-4 AN-1044.	PDF
Contextual Info: IRSM808-105MH Half-Bridge IPM for Small Appliance Motor Drive Applications 10A, 500V Description IRSM808-105MH is a 10A, 500V half-bridge module designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high performance half-bridge topology in	Original	IRSM808-105MH IRSM808-105MH DT04-4 AN-1044.	PDF

MOSFET MARKING JB Search Results

MOSFET MARKING JB Result Highlights (5)

MOSFET MARKING JB Datasheets Context Search

SI5855DC-T1-E3

marking code jb

Si5858DU-T1-GE3

Marking Code JB

IDTP9090

Mosfet MARKING A1

mosfet marking jb

marking code jb

marking JB SCHOTTKY BARRIER DIODE

Marking Code JB

Marking Code JB