MOSFET P 30V 60A Search Results

24v 60a mosfet

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60P03 Power MOSFET -60A, -30V, P-CHANNEL POWER MOSFETS „ DESCRIPTION The UTC UTT60P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance and it can also withstand

Contextual Info: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D 30V RDS ON Low Gate Charge Fast Switching Speed ID G 9m 60A S Description G D Advanced Power MOSFETs from APEC provide the

AP70T03GP

Abstract: AP70T03GS
Contextual Info: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching Speed BVDSS 30V RDS ON 9mΩ ID G 60A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP70T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 9mΩ ID G 60A S Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

Contextual Info: GFP60N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 11mΩ ID 60A H C N ct E ET u R d T NF ro P New GE TM TO-220AB 0.185 (4.70) 0.170 (4.31) 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.410 (10.41) 0.350 (8.89) G PIN D S 0.155 (3.93) 0.134 (3.40)

GFP60N03

Abstract: GFP60N
Contextual Info: GFP60N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 11mΩ ID 60A H C N ct E ET u R d T ENF ro P New G TO-220AB 0.185 (4.70) 0.170 (4.31) 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.410 (10.41) 0.350 (8.89) G PIN D S 0.155 (3.93) 0.134 (3.40)

GFB60N03

Abstract: S1001M
Contextual Info: GFB60N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 11mΩ ID 60A H C N t E ET c u R d T ENF ro P G New D TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) G S 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. 0.42 (10.66) D 0.320 (8.13) 0.360 (9.14)

Contextual Info: GFB60N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 11mΩ ID 60A H C N t E ET c u R d T NF ro P GE New D TM TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) G S 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. 0.42 (10.66) D 0.320 (8.13) 0.360 (9.14)

Contextual Info: STP60NE03L-12 N - CHANNEL 30V - 0.009 i l - 60A - T0-220 STripFET POWER MOSFET TYP E S T P 6 0 N E 0 3 L -1 2 • . . . . . . . V R d S o ii Id < 0.0 1 2 Q. 60 A dss 30 V TYPICAL R D S (on) = 0.009 A VALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: <¿±2 G e n e r a l v S e m ic o n d u c t o r GFP60N03 N-Channel Enhancement-Mode MOSFET V ds 30V R d S ON 11 mí2 I d 60A Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC

MOSFET N-CHANNEL 60v 60A

Abstract: 60n06 60n06l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

Contextual Info: SSF17N 60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 uA M ax @ VDS= 600V

mosfet 60v 60a

Contextual Info: FDB14AN06LA0_F085 N-Channel PowerTrench MOSFET 60V, 60A, 14.6mΩ Features Applications • r DS ON = 12.8mΩ (Typ.), VGS = 5V, ID = 60A • Motor / Body Load Control • Qg(tot) = 24nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

RU60P60R

Abstract: ruichips
Contextual Info: RU60P60R P-Channel Advanced Power MOSFET Features Pin Description • -60V/-60A, RDS ON =22mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature

TRIACS EQUIVALENT LIST

Abstract: 440v to 12v smps power supply REG IC 48V IN 12V 10A OUT 440v ac voltage regulator 440v to 12v smps power supply 50A dimmer diagrams IGBT FKPF12N60 24v 12v 20A regulator 600V igbt dc to dc buck converter 24V 10A SMPS
Contextual Info: FS8S0765RC The FS8S0765RC is a highly integrated off-line power switch FPS for CRT monitor fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (650V minimum breakdown rating) with a

9972gp

Abstract: 9972gs Advanced Power Electronics 9972gp 9972g 9972 marking codes transistors SSs AP9972GP AP9972
Contextual Info: AP9972GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Surface Mount Package BVDSS 60V RDS ON 18mΩ ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: I , I PD-91811 International 3BR Rectifier IR F B 9N 60A HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer

IXDD504D2

Contextual Info: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps

B60NE06L

Abstract: b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4
Contextual Info: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature

Contextual Info: SSP1N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B BVpss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA M ax @ VM = 600V

30V 20A 10KHz power MOSFET

Abstract: IXDD504 IXDD504D2 IXDD504PI driving mosfet/igbt with pulse transformer driver IXDD504SIA IXDE504 IXDE504PI IXDE504SIA IXDD504SI
Contextual Info: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps