MOSFET P 30V 8A Search Results

JESD97

Abstract: S8C5H30L STS8C5H30L
Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced

Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced

JESD97

Abstract: S8C5H30L STS8C5H30L
Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/p-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET Features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced ■ Switching losses reduced

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT8P03-H Power MOSFET -8A, -30V, P-CHANNEL MOSFET  DESCRIPTION The UTC UTT8P03-H is a P-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge.

4505ss

Abstract: A1770 24V 1A mosfet
Contextual Info: CYStech Electronics Corp. Spec. No. : C439Q8 Issued Date : 2009.02.19 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4505Q8 BVDSS ID RDSON max N-CH 30V 10A 14mΩ P-CH -30V -8.4A 20mΩ Description The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8

apm4550

Abstract: APM4550J MOSFET N-CH 200V STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A APM4550J MOSFET APM4550 dip8
Contextual Info: APM4550J Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 30V/8A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of DIP − 8 -30V/-7A, RDS(ON) = 40mΩ (typ.) @ VGS = -10V

APM4546J

Abstract: APM4546
Contextual Info: APM4546J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 30V/8A, RDS(ON) =20mΩ (typ.) @ VGS = 10V RDS(ON) =24mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -30V/-6A, RDS(ON) =38mΩ (typ.) @ VGS =-10V

TO-252-4L

Abstract: mtc210 To-252-4
Contextual Info: Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 1/11 CYStech Electronics Corp. N & P-Channel Enhancement Mode Power MOSFET MTC2103BJ4 Features N-CH P-CH BVDSS 30V -30V ID 8A -6A 21mΩ 45mΩ RDSON MAX • Low Gate Charge • Simple Drive Requirement

APM4546

Abstract: APM4546J CH-140 P-Channel MOSFET code L 1A MS-001 STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4
Contextual Info: APM4546J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 30V/8A, RDS(ON) =20mΩ (typ.) @ VGS = 10V RDS(ON) =27mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -30V/-6A, RDS(ON) =38mΩ (typ.) @ VGS =-10V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT4435-H Power MOSFET -8A, -30V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT4435-H is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, low gate charge and a minimum on-state

Transistor Mosfet N-Ch 30V

Abstract: STS8C5H30L S8C5H30L P-CHANNEL
Contextual Info: STS8C5H30L N-CHANNEL 30V - 0.018Ω - 8A SO-8 P-CHANNEL 30V - 0.045Ω - 5A SO-8 LOW GATE CHARGE StripFET III MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) 30 V 30 V < 0.022 Ω < 0.055 Ω

AP4506

Contextual Info: AP4506GEH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 30V RDS ON Good Thermal Performance Fast Switching Performance S1 24m ID G1 S2 9A P-CH BVDSS G2 -30V

TH 2267

Abstract: 2502P 256P CBHK741B019 F63TNR FDW2502P FDW256P
Contextual Info: FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

TH 2267

Abstract: 256P FDW256P
Contextual Info: FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

H9942

Abstract: FDW2502P 2502P 256P CBHK741B019 F63TNR FDW256P
Contextual Info: FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

Contextual Info: FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

Contextual Info: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER

AO4415

Contextual Info: AO4415 30V P-Channel MOSFET General Description Product Summary The AO4415 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V

Contextual Info: AO4415 30V P-Channel MOSFET General Description Product Summary The AO4415 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V

复合

Abstract: ELM35604KA P2103ND5G
Contextual Info: 复合沟道 MOSFET ELM35604KA-S •概要 ■特点 ELM35604KA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=8.5A ·Id=-7A

Contextual Info: AON2409 30V P-Channel MOSFET General Description Product Summary The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

Contextual Info: AON2409 30V P-Channel MOSFET General Description Product Summary The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

Contextual Info: AON2409 30V P-Channel MOSFET General Description Product Summary The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

TSM4835

Abstract: TSM4835CS
Contextual Info: TSM4835 30V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS = - 30V RDS on , Vgs @ - 10V, Ids @ - 9.5A =18mΩ RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30mΩ Features Block Diagram