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    MOSFET P 950 Search Results

    MOSFET P 950 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P 950 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FQB34P10 / FQI34P10 P-Channel QFET MOSFET -100 V, -33.5 A, 60 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB34P10 FQI34P10

    Untitled

    Abstract: No abstract text available
    Text: FQB34P10 / FQI34P10 P-Channel QFET MOSFET -100 V, -33.5 A, 60 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB34P10 FQI34P10 FQI34P10 17Not

    Untitled

    Abstract: No abstract text available
    Text: FQB34P10 P-Channel QFET MOSFET 100 V, -33.5 A, 60 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQB34P10 FQB34P10

    OM12P10SA

    Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
    Text: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •


    Original     		PDF OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM2P50ST OM8P25SA

    AAT4250

    Abstract: AAT4280 AAT4280-1 AAT4280-2 AAT4280-3 SC70JW-8 AAT4280IGU-3
    Text: PRODUCT DATASHEET AAT4280 SmartSwitchTM Slew Rate Controlled Load Switch General Description Features The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The P-channel MOSFET device has a typical RDS ON


    Original     		PDF AAT4280 AAT4280 AAT4250 AAT4280-1 AAT4280-2 AAT4280-3 SC70JW-8 AAT4280IGU-3

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3139KDW Dual P-Channel Power MOSFET SOT-363 GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS ON .


    Original     		PDF OT-363 CJ3139KDW OT-363 CJ3139K -200mA,

    ML5203

    Abstract: sot-23 marking code pe AN-994 application IRLML2502 IRLML
    Text: PD - 95060A IRLML6402PbF HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET l SOT-23 Footprint l Low Profile <1.1mm l Available in Tape and Reel l Fast Switching l Lead-Free Description l D l VDSS = -20V G RDS(on) = 0.065Ω S These P-Channel MOSFETs from International Rectifier utilize


    Original     		PDF 5060A IRLML6402PbF OT-23 EIA-481 EIA-541. ML5203 sot-23 marking code pe AN-994 application IRLML2502 IRLML

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT DATASHEET AAT4601A SmartSwitchTM 1.8A Current Limited P-Channel Switch General Description Features The AAT4601A SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET ASPM™ product family. It is a 1.8A current limited P-channel MOSFET


    Original     		PDF AAT4601A AAT4601A

    gsm2311

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart


    Original     		PDF GSM2311, -20V/-4 -20V/-3 -20V/-2 OT-23-3L Lane11 gsm2311

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3981, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM3981, -20V/-3 -20V/-2 -20V/-1 Lane11

    IRLML6402PBF

    Abstract: No abstract text available
    Text: PD - 95060 IRLML6402PbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize


    Original     		PDF IRLML6402PbF OT-23 EIA-481 EIA-541. IRLML6402PBF

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM2367AS, -20V/-2 OT-23 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM2301AS, -20V/-2 OT-23 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6801, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM6801, -30V/-3 -30V/-2 -30V/-1 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM3413A, -20V/-2 -20V/-1 OT-23 Lane11

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM2301A, -20V/-2 OT-23 Lane11

    516MA

    Abstract: SOP8 1251
    Text: PRODUCT DATASHEET AAT4601 SmartSwitchTM 1.8A Current Limited P-Channel Switch General Description Features The AAT4601 SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET ASPM™ product family. It is a 1.8A current limited P-channel MOSFET


    Original     		PDF AAT4601 AAT4601 516MA SOP8 1251

    Untitled

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM2367S, -20V/-3 -20V/-2 OT-23-3L Lane11

    gsm2301

    Abstract: No abstract text available
    Text: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone


    Original     		PDF GSM2301S, -20V/-2 OT-23-3L Lane11 gsm2301

    Untitled

    Abstract: No abstract text available
    Text: Si4967DY V1SHAY Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si o SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL L IM IT Drain-Source Voltage


    OCR Scan     		PDF Si4967DY

    Untitled

    Abstract: No abstract text available
    Text: Si4965DY VISH A Y Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL Drain-Source Voltage L IM IT


    OCR Scan     		PDF Si4965DY S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: Si4927DY V1SHAY Siliconix Dual P-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.028 @ VGS = —10 V ±7 .4 0.045 @ VGS = —4.5 V ±5 .8 -3 0 1 ° ' Si S2 O Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET


    OCR Scan     		PDF Si4927DY S2SM735 DD17flflT

    Untitled

    Abstract: No abstract text available
    Text: Si6955DQ VISH A Y Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) r DS(ON) (//) Id (A) 0.085 @ VGS = —10 V ±2 .5 0.19 @ VGs = —4.5 V ±1 .8 -3 0 Si Q S2 Q Di d2 TSSOP-8 d2 Di Si s2 s2 Gi g2 Si Si6955DQ Top View P-Channel MOSFET P-Channel MOSFET


    OCR Scan     		PDF Si6955DQ S-56944â 23-Nov-98

    TO-253 SILICONIX

    Abstract: No abstract text available
    Text: SÌ6955DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET Vos (V) ^O S(O M } ( f i) lD (A) 0.085 @ V q S = -1 0 V -30 0.19 @ Vos = "4-5 V 2 Si s o Q TSSOP-8 3i O G2 i} It Top View Ô o, Ô d2 P-Channel MOSFET P-Channel MOSFET SYMBOL LIM IT Drain-Source Voltage


    OCR Scan     		PDF 6955DQ S-56944--Rev. 23-Nov-98 TO-253 SILICONIX