MOSFET P 950 Search Results

Contextual Info: Si4967DY V1SHAY Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si o SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL L IM IT Drain-Source Voltage

Contextual Info: Si4965DY VISH A Y Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL Drain-Source Voltage L IM IT

Contextual Info: FQB34P10 / FQI34P10 P-Channel QFET MOSFET -100 V, -33.5 A, 60 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

Contextual Info: FQB34P10 / FQI34P10 P-Channel QFET MOSFET -100 V, -33.5 A, 60 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

Contextual Info: Si4927DY V1SHAY Siliconix Dual P-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.028 @ VGS = —10 V ±7 .4 0.045 @ VGS = —4.5 V ±5 .8 -3 0 1 ° ' Si S2 O Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET

Contextual Info: FQB34P10 P-Channel QFET MOSFET 100 V, -33.5 A, 60 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: Si6955DQ VISH A Y Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) r DS(ON) (//) Id (A) 0.085 @ VGS = —10 V ±2 .5 0.19 @ VGs = —4.5 V ±1 .8 -3 0 Si Q S2 Q Di d2 TSSOP-8 d2 Di Si s2 s2 Gi g2 Si Si6955DQ Top View P-Channel MOSFET P-Channel MOSFET

TO-253 SILICONIX

Contextual Info: SÌ6955DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET Vos (V) ^O S(O M } ( f i) lD (A) 0.085 @ V q S = -1 0 V -30 0.19 @ Vos = "4-5 V 2 Si s o Q TSSOP-8 3i O G2 i} It Top View Ô o, Ô d2 P-Channel MOSFET P-Channel MOSFET SYMBOL LIM IT Drain-Source Voltage

OM12P10SA

Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
Contextual Info: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •

AAT4250

Abstract: AAT4280 AAT4280-1 AAT4280-2 AAT4280-3 SC70JW-8 AAT4280IGU-3
Contextual Info: PRODUCT DATASHEET AAT4280 SmartSwitchTM Slew Rate Controlled Load Switch General Description Features The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The P-channel MOSFET device has a typical RDS ON

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3139KDW Dual P-Channel Power MOSFET SOT-363 GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS ON .

ML5203

Abstract: sot-23 marking code pe AN-994 application IRLML2502 IRLML
Contextual Info: PD - 95060A IRLML6402PbF HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET l SOT-23 Footprint l Low Profile <1.1mm l Available in Tape and Reel l Fast Switching l Lead-Free Description l D l VDSS = -20V G RDS(on) = 0.065Ω S These P-Channel MOSFETs from International Rectifier utilize

Contextual Info: PRODUCT DATASHEET AAT4601A SmartSwitchTM 1.8A Current Limited P-Channel Switch General Description Features The AAT4601A SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET ASPM™ product family. It is a 1.8A current limited P-channel MOSFET

gsm2311

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart

IRLML6402PBF

Contextual Info: PD - 95060 IRLML6402PbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone

Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6801, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone

516MA

Abstract: SOP8 1251
Contextual Info: PRODUCT DATASHEET AAT4601 SmartSwitchTM 1.8A Current Limited P-Channel Switch General Description Features The AAT4601 SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET ASPM™ product family. It is a 1.8A current limited P-channel MOSFET

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone

gsm2301

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone