MOSFET P CHANNEL 30V 3A Search Results

STS3C3F30L

Contextual Info: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ

STS3C3F30L

Contextual Info: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ

27BSC

Abstract: MS-012AA ZXMC3A17DN8 ZXMC3A17DN8TA ZXMC3A17DN8TC
Contextual Info: ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V BR DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that

Contextual Info: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure

Transistor Mosfet N-Ch 30V

Abstract: P Channel STripFET STS3C3F30L P-channel N-Channel power mosfet SO-8
Contextual Info: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ

STS3C3F30L

Contextual Info: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ

ZXMC3A16DN8

Abstract: ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16
Contextual Info: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure

Contextual Info: ZXMC3A18DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V BR DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that

MS-012AA

Abstract: ZXMC3A17DN8 ZXMC3A17DN8TA ZXMC3A17DN8TC
Contextual Info: ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V BR DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that

Contextual Info: ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V BR DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that

ZXMC3A16DN8

Abstract: ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16 135s3
Contextual Info: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure

P Channel STripFET

Abstract: STripFET STS3DPFS30 mosfet p channel 30v 3a
Contextual Info: STS3DPFS30 P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage

27BSC

Abstract: ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC
Contextual Info: ZXMC3A18DN8 ADVANCE INFORMATION COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V BR DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that

STripFET

Abstract: STS3DPFS30
Contextual Info: STS3DPFS30 P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage

ZXMC3A17DN8

Abstract: MS-012AA ZXMC3A17DN8TA ZXMC3A17DN8TC
Contextual Info: ZXMC3A17DN8 ADVANCE INFORMATION COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V BR DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that

mosfet "marking code 44" sot-23-6

Abstract: APM2706C MOSFET N SOT-23 STD-020C apm27 AB SOT-23-6
Contextual Info: APM2706C Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel D1 S1 30V/3A, D2 RDS(ON)= 55mΩ(typ.) @ VGS= 10V RDS(ON)= 80mΩ(typ.) @ VGS= 4.5V • G1 P-Channel S2 G2 -30V/-2.2A, Top View of SOT-23-6 RDS(ON)= 100mΩ(typ.) @ VGS= -10V

Contextual Info: STB70NFS03L N-channel - 30V - 0.0075Ω - 70A D2PAK STripFET Power MOSFET plus schottky rectifier General features Type VDSS RDS on ID STB70NFS03L 30V <0.0095Ω 70A Schottky IF(AV) VRRM VF(MAX) 3A 30V 0.51V u d o 3 1 r P e D²PAK Description This product associates a Power MOSFET of the

Contextual Info: STB70NFS03L N-channel - 30V - 0.0075Ω - 70A D2PAK STripFET Power MOSFET plus schottky rectifier General features Type VDSS RDS on ID STB70NFS03L 30V <0.0095Ω 70A Schottky IF(AV) VRRM VF(MAX) 3A 30V 0.51V u d o 3 1 r P e D²PAK Description This product associates a Power MOSFET of the

STS3DPFS30L

Contextual Info: STS3DPFS30L  P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V <0.16Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage

STS3DPFS30

Abstract: mosfet p channel 30v 3a
Contextual Info: STS3DPFS30  P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V 0.09Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage

P-Channel MOSFET code L 1A

Abstract: APM4532 APM4532J MS-001 STD-020C
Contextual Info: APM4532J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 30V/4.3A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =60mΩ(typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -30V/-3A, RDS(ON) =85mΩ(typ.) @ VGS =-10V RDS(ON) =135mΩ(typ.) @ VGS =-4.5V

STS4C3F30L

Abstract: JESD97
Contextual Info: STS4C3F30L N-channel 30V - 0.044Ω - 5A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F30L (n-ch) 30V <0.055Ω 5A STS4C3F30L (p-ch) 30V <0.165Ω 3A • Low threshold drive ■ Standard outline for easy automated surface mount assembly

JESD97

Abstract: STS4C3F30L STS4C3F30L,
Contextual Info: STS4C3F30L N-channel 30V - 0.044Ω - 5A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F30L (n-ch) 30V <0.055Ω 5A STS4C3F30L (p-ch) 30V <0.165Ω 3A • Low threshold drive ■ Standard outline for easy automated surface mount assembly

Contextual Info: ZXMC3A18DN8 Complementary 30V enhancement mode MOSFET Summary N-Channel = V BR DSS= 30V : RDS(on)= 0.025⍀; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035⍀; ID= -6.3A Description D1 This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of