MOSFET P-CHANNEL 10A Search Results

P-channel N-Channel power mosfet SO-8

Abstract: IRF7350PBF IRF7350
Contextual Info: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3310 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3310 is a P-channel enhancement mode Power MOSFET. The UTC UT3310 uses advanced technology to provide customers with fast switching, low on-resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness with UTC’s

613 MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced

FDS6575

Abstract: F63TNR F852 SOIC-16
Contextual Info: November 1998 FDS6575 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

DIODE 8069

Abstract: CPH6615
Contextual Info: CPH6615 Ordering number : ENN8069 N-Channel and P-Channel Silicon MOSFETs CPH6615 General-Purpose Switching Device Applications Features • • • • The CPH6615 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, Ultrahigh-speed switching, thereby enabling high-density mounting.

fw341

Abstract: D2004 W341
Contextual Info: FW341 Ordering number : ENN7922 N-Channel and P-Channel Silicon MOSFETs FW341 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage

w907

Abstract: ENA1810
Contextual Info: FW907 Ordering number : ENA1810 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW907 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 Preliminary POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low

Contextual Info: FW907 Ordering number : ENA1810 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW907 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET

4505ss

Abstract: A1770 24V 1A mosfet
Contextual Info: CYStech Electronics Corp. Spec. No. : C439Q8 Issued Date : 2009.02.19 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4505Q8 BVDSS ID RDSON max N-CH 30V 10A 14mΩ P-CH -30V -8.4A 20mΩ Description The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT36P03 Power MOSFET -30V, -36A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT36P03 is a P-channel Power MOSFET, using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also

OM12P10SA

Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
Contextual Info: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •

RD10

Abstract: AAT8303 AAT8303ITS-T1
Contextual Info: AAT8303 20V P-Channel Power MOSFET General Description Features The AAT8303 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's proprietary ultrahigh density Trench technology, and space saving

Diode PJ 1266 IV

Abstract: LTC1267
Contextual Info: /T liriÇ A B LTC1266 LTC 12 6 6 -3 ,3/LTCI 266 -5 TECHNOLOGY Synchronous Regulator Controller for N- or P-Channel MOSFETs FCRTURCS DCSCRIPTIOfl • Ultra-High Efficiency: Over 95% Possible ■ Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout

P channel MOSFET 10A

Abstract: P channel MOSFET 10A schematic LPT-4545-A002 UU100 LTC1266-3.3 919AS-4R7M LTC1266 MBR0530T1 MBRS130LT3 Si9410
Contextual Info: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Ultrahigh Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout

Contextual Info: IRFP9140 Semiconductor April 1999 Data Sheet -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel

Contextual Info: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Ultrahigh Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout

A 1266

Abstract: ltc1266 CTXO212801 MBR0530T1 MBRS130LT3 Si9410 electrolytic capacitor 470
Contextual Info: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Ultra-High Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout

Contextual Info: FDS6575 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate