MOSFET P-CHANNEL 8A Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT8P03-H Power MOSFET -8A, -30V, P-CHANNEL MOSFET  DESCRIPTION The UTC UTT8P03-H is a P-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge.

ENN8206

Abstract: CPH5810 MCH3312
Contextual Info: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)

EMH2603

Contextual Info: EMH2603 Ordering number : ENA0657 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2603 General-Purpose Switching Device Applications Features • • • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

Contextual Info: EMH2602 Ordering number : EN8732 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT4435-H Power MOSFET -8A, -30V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT4435-H is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, low gate charge and a minimum on-state

EMH2601

Abstract: EN8731 it10408
Contextual Info: EMH2601 Ordering number : EN8731 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2601 General-Purpose Switching Device Applications Features • • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

W360

Abstract: FW360
Contextual Info: Ordering number : ENN7556 FW360 N-Channel and P-Channel Silicon MOSFETs FW360 Ultrahigh-Speed Switching, Motor Driver Applications Preliminary Features • The FW360 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129

EMH2602

Contextual Info: EMH2602 Ordering number : EN8732A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

Contextual Info: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171

MCH3312

Abstract: CPH5854 SB1003M3 A05166 marking YG
Contextual Info: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),

diode N1004

Abstract: CPH5822 MCH3312 N1004 SBS010M
Contextual Info: CPH5822 Ordering number : ENN7702A CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)

Contextual Info: CPH5822 Ordering number : ENN7702 CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General Purpose Switching Device Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)

VEC2609

Abstract: INVERTER BOARD SANYO
Contextual Info: VEC2609 Ordering number : ENA0103 VEC2609 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • The best suited for inverter applications. The VEC2609 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,

Contextual Info: Ordering number : ENN6899 CPH5802 CPH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Package Dimensions unit : mm 2171 [CPH5802] 2.9 0.15 0.2 4 3 2.8 0.6 5 1.6 Composite type with a P-Channel Sillicon MOSFET

CPH5821

Abstract: MCH3312 SBS004 marking qx
Contextual Info: CPH5821 Ordering number : ENN7701 CPH5821 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS004)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced

AN 7468

Abstract: diode N1004 ic 74682 TA-3804 CPH5813 MCH3318 N1004 SBS010M 74682
Contextual Info: CPH5813 Ordering number : ENN7468A CPH5813 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3318 and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting.

Contextual Info: STS8C6H3LL N-channel 30 V, 0.019 Ω typ., 8 A, P-channel 30 V, 0.024 Ω typ., 6 A STripFET Power MOSFET in a SO-8 package Datasheet - preliminary data Features Order code Channel VDS RDS on max ID 0.021 Ω 8A 0.030 Ω 5A N STS8C6H3LL 30 V P • STripFET™V N-channel Power MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness with UTC’s

613 MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced

CPH5802

Abstract: MCH3306 SBS004
Contextual Info: Ordering number : ENN6899 CPH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions unit : mm 2171 [CPH5802] 2.9 0.15 0.2 4 3 0.6 5 0.05 2.8 1.6 Composite type with a P-Channel Sillicon MOSFET

CPH6619

Contextual Info: CPH6619 Ordering number : ENA0473 SANYO Semiconductors DATA SHEET CPH6619 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET

UTT20P04

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT20P04 Power MOSFET -40V, -20A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT20P04 is a P-channel Power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

w907

Abstract: ENA1810
Contextual Info: FW907 Ordering number : ENA1810 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW907 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=13mΩ(typ.), Pch: RDS(on)1=20mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET