MOSFET P51 Search Results

circuit diagram of 13.56MHz RF Generator

Abstract: schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz DRF1200 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz
Contextual Info: Application Note 1811 December 2008 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET

1kw mosfet

Abstract: circuit diagram of 13.56MHz RF Generator DRF12xx P5100 acoustic transducer 13.56MHZ mosfet
Contextual Info: DRF12XX Evaluation Board Figure 1 shows a simplified circuit diagram for the DRF12XX series of devices. The Hybrid consists of a MOSFET Driver and Power MOSFET. The control signal is applied to internal driver through pin 4 IN and referenced to pin 5 (SG) a Kelvin Ground return. The pin 3 (FN)

ELM36403EA

Contextual Info: 单 P 沟道 MOSFET ELM36403EA-S •概要 ■特点 ELM36403EA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-30V ·Id=-5A ·Rds on < 51mΩ (Vgs=-10V) ·Rds(on) < 85mΩ (Vgs=-4.5V) ■绝对最大额定值

Contextual Info: Application Note 1805 October 2012 DRF12XX Evaluation Board Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com Figure 1 shows a simplified circuit diagram for the DRF12XX series of devices. The Hybrid consists of a MOSFET

gate drive pulse transformer

Abstract: Transformer Vitec
Contextual Info: TYPE 56P MOSFET GATE DRIVE TRANSFORMER FEATURES Designed for operating frequency in excess of 200KHz. Low leakage inductance: drives most power FETS. Drive directly from pulse modulators. 3750 Vrms gate to drive hipot test. Base material meets flammability requirement of UL94V-0.

Transformer Vitec

Abstract: P5101-1
Contextual Info: TYPE 56P MOSFET GATE DRIVE TRANSFORMER FEATURES Designed for operating frequency in excess of 200KHz. Low leakage inductance: drives most power FETS. Drive directly from pulse modulators. 3750 Vrms gate to drive hipot test. Base material meets flammability requirement of UL94V-0.

Contextual Info: TYPE 56P MOSFET GATE DRIVE TRANSFORMER FEATURES Low leakage inductance: drives most power FETS. Drive directly from pulse modulators. 3750 Vrms gate to drive hipot test. Base material meets flammability requirement of UL94V-0. • Manufactured to UL recognized 130 insulation system.

mosfet p51

Contextual Info: MIC94050/94051 Micrel MIC94050/94051 4-Terminal SymFET P-Channel MOSFET General Description The MIC94050 and MIC94051 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is

3 terminal mosfet p51

Abstract: 74HC04 datasheet 74HC04 MIC94050 MIC94050BM4 MIC94051 MIC94051BM4 94051 25VGS
Contextual Info: MIC94050/94051 Micrel MIC94050/94051 4-Terminal SymFET P-Channel MOSFET General Description The MIC94050 and MIC94051 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is

AP5100

Abstract: AP-5100 AP5100WG
Contextual Info: AP5100 1.2A STEP-DOWN CONVERTER with 1.4MHz SWITCHING FREQUENCY Description Pin Assignments The AP5100 is a current mode step-down converter with a built-in power MOSFET to enable smallest solution size power conversion. Top View With the low series resistance power switch it enables a

Contextual Info: Single P-channel MOSFET ELM36403EA-S •General description ■Features ELM36403EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-5A Rds(on) < 51mΩ (Vgs=-10V) Rds(on) < 85mΩ (Vgs=-4.5V)

Contextual Info: AP5100 1.2A STEP-DOWN CONVERTER with 1.4MHz SWITCHING FREQUENCY Description Pin Assignments The AP5100 is a current mode step-down converter with a built-in power MOSFET to enable smallest solution size power conversion. Top View With the low series resistance power switch it enables a

Contextual Info: PTF 10107 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor Description The 10107 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts power output. Nitride surface passivation and gold

74HC04

Abstract: MIC94050 MIC94050BM4 MIC94051 MIC94051BM4 3 terminal mosfet p51
Contextual Info: MIC94050/94051 Micrel MIC94050/94051 4-Terminal TinyFET P-Channel MOSFET Final General Description Features The MIC94050 and MIC94051 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is

3 terminal mosfet p51

Abstract: 74HC04 MIC94050 MIC94050BM4 MIC94051 MIC94051BM4 MOSFET sot-143
Contextual Info: MIC94050/94051 Micrel MIC94050/94051 4-Terminal TinyFET P-Channel MOSFET Final General Description Features The MIC94050 and MIC94051 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is

DRF1300

Abstract: P6139A P5100 Chokes* COMMON MODE SUPPRESSION 250V high power pulse generator with mosfet pulse DRF1300
Contextual Info: DRF13XX Evaluation Board Figure 1 shows a simplified circuit diagram for the DRF13XX series of devices. The Hybrid consists of two MOSFET Drivers and two Power MOSFETs in a Push-Pull configuration. For U1, the control signal is applied to internal driver through pin 4 IN

27.12Mhz

Abstract: PRF-1150 oscillator 27.12mhz circuit diagram of 13.56MHz RF Generator 600w schematic diagram switching power supply zener diode c24 5t 5.1V DIODE ZENER Zener LED ramp generator 555 rf toroid design considerations
Contextual Info: Application Note 1813 September 2010 27.12 MHz, CLASS-E, 600W RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E 27M Reference design is available to expedite the evaluation of the DRF1200 Driver

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

Contextual Info: 24 July 2008 Data Sheet No. PD60359 IRMD26310DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS26310DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel

SMD fuse P110

Abstract: schematic diagram 100v dc motor speed controller IC L7805cv circuit diagram of smps 400w DESKTOP LCL-UF1125 IRS2631 flyback transformer high-voltages smd smps 230v ac to 18v dc tyco igbt p11 induction motor speed control circuits
Contextual Info: 24 July 2008 Data Sheet No. PD60359 IRMD26310DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS26310DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel

Contextual Info: 24 July 2008 Data Sheet No. PD60358 IRMD2336DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS2336DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel

IRMD2336DJ

Abstract: International Rectifier IRFBG30 transistor 1000V TO220 3,1 A JK55B-100-8 circuit diagram of smps 400w DESKTOP N5RL20 schematic diagram 100v dc motor speed controller SMD fuse P110 Circuit diagram of 1W LED drive input 220vac PRPN082PAEN
Contextual Info: 24 July 2008 Data Sheet No. PD60358 IRMD2336DJ 3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT IRS2336DJ GATE DRIVER IC FEATURES • • • • • • • • • • • • • • • • Drives up to six IGBT/MOSFET power devices Gate drive supplies up to 20 V per channel

Contextual Info: Application Note 1806 October 2012 DRF13XX Evaluation Board Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com Figure 1 shows a simplified circuit diagram for the DRF13XX series of devices. The Hybrid consists of two MOSFET Drivers and two Power MOSFETs in a Push-Pull configuration. For U1, the control signal is applied to

Contextual Info: シングル P チャンネル MOSFET ELM36403EA-S •概要 ■特長 ELM36403EA-S は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-5A ・ Rds on < 51mΩ (Vgs=-10V) ・ Rds(on) < 85mΩ (Vgs=-4.5V)