MOSFET PP Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

mosfet SOA testing

Abstract: MOSFET testing linear mosfet MOSFET 1000 VOLTS
Contextual Info: POWER MOS PRODUCTS - Linear MOSFETs W E N HERMETIC LINEAR MOSFETs What is a Linear MOSFET? A MOSFET specifically designed to be more robust than a standard MOSFET when operated with concurrent high voltage and high current near DC conditions >100msecs . applications. This new Linear MOSFET

mosfet SPICE MODEL

Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
Contextual Info: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET

Contextual Info: Programmable Temperature Controlled MOSFET Driver ISL25700 Features The Temperature Controlled MOSFET Driver is a highly integrated solution that combines a MOSFET driver with overcurrent protection and two 8-bit resolution DACs on a monolithic CMOS integrated circuit IC .

Contextual Info: VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data • Direct access to the gate of the Power MOSFET analog driving • Compatible with standard Power MOSFET 10 Description 3 1 1 D2PAK PowerSO-10

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET High Gain, Rugged Device

Contextual Info: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171

Contextual Info: [ Ordering nufnb^rEN N 6981 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 SAWYD DC / DC Converter Applications Features Package Dimensions • Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006) 2171

Contextual Info: SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

MOSFET TOSHIBA 2SK

Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK
Contextual Info: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.

transistor 2sk

Abstract: MOSFET TOSHIBA 2Sj equivalent 2sk2698 mosfet MOSFET TOSHIBA 2SK HIGH POWER MOSFET TOSHIBA equivalent 2sk2837 mosfet TE161 2SK2615 2SK2698 2SK2837
Contextual Info: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.

Zener diode with 9v FOR POWER SUPPLY

Abstract: 9V 1A MOSFET N-channel n02 mosfet MH10 inductor input 5 volt 3 v voltage mosfet marking micrel sot cd sot143 fet
Contextual Info: mica MIC5018 IttyBitty High-Side MOSFET Driver Preliminary Information General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is de­ signed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side

Contextual Info: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V

Contextual Info: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

73851

Contextual Info: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

SC75

Abstract: SC-75 SiP4282A
Contextual Info: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

73851

Abstract: SC75 SC-75 SiP4282 SiP4282-1-T1-E3 SiP4282-3-T1-E3 SiP4282DVP-1-T1-E3
Contextual Info: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

501B 8 P

Abstract: 5018B
Contextual Info: MIC5018 IE ü b IttyBitty High-Side MOSFET Driver L Preliminary Information General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is de­ signed to switch an N-channel enhancement-type MOSFET from a TTL compatible conlrol signal in high- or low-side

AAT4250

Abstract: AAT4280 AAT4280-1 AAT4280-2 AAT4280-3 SC70JW-8 AAT4280IGU-3
Contextual Info: AAT4280 Slew Rate Controlled Load Switch General Description Features The AAT4280 SmartSwitch is a member of AATI's Application Specific Power MOSFET™ ASPM™ product family. The AAT4280 is a P-channel MOSFET power switch designed for high-side loadswitching applications. The P-channel MOSFET

Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 ABFP D G D S G S Features MOSFET

SOT23-6 MARKING 310

Abstract: AAT4280IGU-1-T1 AAT4280IGu AAT4250 AAT4280 AAT4280-1 AAT4280-2 AAT4280-3 SC70JW-8 aat4280ijs-3-t1
Contextual Info: AAT4280 Slew Rate Controlled Load Switch General Description Features The AAT4280 SmartSwitch is a member of AATI's Application Specific Power MOSFET™ ASPM™ product family. The AAT4280 is a P-channel MOSFET power switch designed for high-side loadswitching applications. The P-channel MOSFET

IRF540

Abstract: IRF540 mosfet with maximum VDS 30 V FULLY PROTECTED MOSFET IRFZ24 IRLZ44 MH10 MIC5018 MIC5018BM4 MIC5018YM4 Si9410DY
Contextual Info: MIC5018 IttyBitty High-Side MOSFET Driver General Description Features The MIC5018 IttyBitty™ high-side MOSFET driver is designed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side switch applications. This driver features the tiny

Power MOSFET TT 2146

Abstract: transistor TT 2146 mosfet TT 2146 MOTOROLA N-Channel MOSFET
Contextual Info: MOTOROLA O rder this docum ent by M RF185/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET