MOSFET S1A Search Results

F16N06

Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
Contextual Info: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

bv42 transistor

Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
Contextual Info: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description „ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate

Contextual Info: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998

TC227

Contextual Info: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate

Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998

mosfet SPICE MODEL

Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
Contextual Info: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET

IRFP150N

Contextual Info: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,

AN7254

Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49086 RF1K4908696 pspice high frequency mosfet
Contextual Info: Power MOSFET Data Sheets RF1K49086 S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 3.5A, 30V The RF1K49086 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

75321p

Abstract: 75321S HUF75321 410E1
Contextual Info: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor November 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology

Contextual Info: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor Novem ber 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology

8E-10

Abstract: FDM3300NZ TC146
Contextual Info: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on

Contextual Info: FDD8878 / FDU8878 N-Channel PowerTrench MOSFET 30V, 40A, 15mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDU8896

Abstract: FDD8896
Contextual Info: FDD8896_F085 / FDU8896_F085 N-Channel PowerTrench MOSFET 30V, 94A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

irf530

Abstract: 929E-10 IRF530 fairchild
Contextual Info: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power

N2357D

Abstract: N2357
Contextual Info: ISL9N2357D3ST Data Sheet 30V, 0.007 Ohm, 35A, N-Channel DenseTrench Power MOSFET March 2001 File Number 4929.1 DenseTrench™ [ /Title DenseTrench from Intersil is a new advanced MOSFET technology that achieves the lowest possible on-resistance Features

FDD8896

Abstract: FDU8896 FDD8896_NL
Contextual Info: FDD8896 / FDU8896 N-Channel PowerTrench MOSFET 30V, 94A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

65e9

Abstract: FDD8874 FDU8874
Contextual Info: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDD8870

Abstract: FDU8870 m038
Contextual Info: FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 35A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDD8870

Abstract: FDU8870 M038 FDD8870-F085
Contextual Info: FDD8870_F085 / FDU8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDD8878 / FDU8878 N-Channel PowerTrench MOSFET 30V, 40A, 15mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

67E-3

Abstract: FDD8874 FDU8874
Contextual Info: FDD8874 / FDU8874 N-Channel PowerTrench MOSFET 30V, 116A, 5.1m Ω General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDD8882 / FDU8882 N-Channel PowerTrench MOSFET 30V, 55A, 11mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM