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    MOSFET SC-59 POWER Search Results

    MOSFET SC-59 POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1212MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D050603MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 5-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd

    MOSFET SC-59 POWER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CHM1273GP

    Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM1273GP CURRENT 2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small surface mounting type. SC-59


    Original     		CHM1273GP SC-59/SOT-346 SC-59) CHM1273GP PDF

    CHM1592GP

    Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM1592GP CURRENT 500 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE


    Original     		CHM1592GP SC-59/SOT-346 SC-59) CHM1592GP PDF

    Contextual Info: SMG2328 100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient


    Original     		SMG2328 SC-59 SMG2328 30urface 21-Nov-2013 PDF

    SMG2310A

    Contextual Info: SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS ON =115 mΩ Elektronische Bauelemente sRoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the


    Original     		SMG2310A SC-59 SMG2310A 25Capacitance width300 24-Nov-2009 PDF

    Contextual Info: SMG2319P -2.1 A, -30 V, RDS ON 0.20  P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process.


    Original     		SMG2319P SC-59 Charge2319P 26-Jul-2010 PDF

    Contextual Info: SMG2329S -1.2A , -100V , RDS ON 650 mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 DESCRIPTION The SMG2329S provide the designer with best combination


    Original     		SMG2329S -100V SC-59 SMG2329S SMG5409 15-Jul-2013 PDF

    WTC2310

    Contextual Info: WTC2310 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE 60 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low RDS ON RDS(ON)<90mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *SC-59


    Original     		WTC2310 SC-59 05-May-05 SC-59 10-Nov-08 WTC2310 PDF

    SMG2330N

    Abstract: MosFET
    Contextual Info: SMG2330N 5.2A, 30V, RDS ON 32mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power


    Original     		SMG2330N SC-59 300us 4-Jul-2011 SMG2330N MosFET PDF

    SMG2327P

    Abstract: MosFET
    Contextual Info: SMG2327P -3.6 A, -20 V, RDS ON 52 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power


    Original     		SMG2327P SC-59 SC-59 01-Aug-2012 SMG2327P MosFET PDF

    SMG2329P

    Abstract: MosFET 25a DIODE
    Contextual Info: SMG2329P -2.5 A, -30 V, RDS ON 0.112  P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process


    Original     		SMG2329P SC-59 SC-59 12-Nov-2010 SMG2329P MosFET 25a DIODE PDF

    SMG2343P

    Abstract: MosFET
    Contextual Info: SMG2343P -3.6 A, -30 V, RDS ON 0.057  P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process


    Original     		SMG2343P SC-59 SC-59 12-Nov-2010 SMG2343P MosFET PDF

    Contextual Info: SMG2322N 2.5 A, 30 V, RDS ON 0.085  N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process


    Original     		SMG2322N SC-59 SC-59 24-Jun-2010 PDF

    SMG2371P

    Abstract: MosFET
    Contextual Info: SMG2371P -1A, -100V, RDS ON 1.2  P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SC-59 Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.


    Original     		SMG2371P -100V, SC-59 15-Mar-2011 SMG2371P MosFET PDF

    Contextual Info: SMG2321P -4.1 A, -20 V, RDS ON 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process.


    Original     		SMG2321P SC-59 SC-59 22-Nov-2010 PDF

    SMG2339P

    Abstract: MosFET
    Contextual Info: SMG2339P -3.6 A, -30 V, RDS ON 0.057  P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density process


    Original     		SMG2339P SC-59 07-Jul-2010 SMG2339P MosFET PDF

    Contextual Info: SMG2359P -1.6 A, -60 V, RDS ON 0.381  P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process


    Original     		SMG2359P SC-59 SC-59 22-Jun-2010 PDF

    SMG2326N

    Abstract: MosFET 2A DIODE
    Contextual Info: SMG2326N 2.2 A, 20 V, RDS ON 70 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power


    Original     		SMG2326N SC-59 SC-59 14-Feb-2011 SMG2326N MosFET 2A DIODE PDF

    SMG2321P

    Abstract: MosFET
    Contextual Info: SMG2321P -4.1A , -20V , RDS ON 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal


    Original     		SMG2321P SC-59 SC-59 12-Apr-2011 SMG2321P MosFET PDF

    Contextual Info: SMG2334NE 3.5 A, 30 V, RDS ON 60 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process


    Original     		SMG2334NE SC-59 SC-59 14-Jul-2010 PDF

    ON60

    Abstract: smg2334
    Contextual Info: SMG2334NE 3.5 A, 30 V, RDS ON 60 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process


    Original     		SMG2334NE SC-59 SC-59 14-Jul-2010 ON60 smg2334 PDF

    SMG2343PE

    Abstract: MosFET
    Contextual Info: SMG2343PE -3.6 A, -30 V, RDS ON 57 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process


    Original     		SMG2343PE SC-59 SC-59 12-Nov-2010 SMG2343PE MosFET PDF

    SMG2319P

    Abstract: MosFET
    Contextual Info: SMG2319P -2.1A , -30V , RDS ON 200 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal


    Original     		SMG2319P SC-59 SC-59 12-Apr-2011 SMG2319P MosFET PDF

    Contextual Info: SMG2314N 4A , 20V, RDS ON 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and


    Original     		SMG2314N SC-59 27-Jan-2011 PDF

    SMG2310n

    Abstract: MosFET RDS 0,50 ID 1,8 A
    Contextual Info: SMG2310N 2.2A, 30V, RDS ON 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and


    Original     		SMG2310N SC-59 11-Feb-2011 SMG2310n MosFET RDS 0,50 ID 1,8 A PDF