MOSFET SOT223 Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

FDT3N40

Contextual Info: FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features Description • RDS on = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

4435 mosfet

Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
Contextual Info: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT9971P Power MOSFET 5.0A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT9971P is an N-Channel enhancement mode power MOSFET providing customers with high switching speed, cost-effectiveness and minimum on-state resistance.

Contextual Info: N-Channel QFET MOSFET 800V, 0.2 A, 20 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

fqt1n60

Abstract: FQT1N60C 1A 300V mosfet
Contextual Info: N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

522BS

Abstract: BSP75GTA
Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT9971P Preliminary Power MOSFET 5.0A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT9971P is an N-Channel enhancement mode power MOSFET providing customers with high switching speed, cost-effectiveness and minimum on-state resistance.

HUF75307D

Contextual Info: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology

BSP75N

Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

BSP75G

Abstract: BSP75GTA BSP75GTC
Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

3055L transistor

Abstract: Mosfet Sot223
Contextual Info: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,

Mosfet

Abstract: SSF1502G5
Contextual Info: SSF1502G5 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS on 0.14Ω(typ) ID 6A SOT223 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and

Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES

Contextual Info: FQT7N10L N-Channel QFET MOSFET 100 V, 1.7 A, 350 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially

TRANSISTOR K 135 mosfet

Contextual Info: PMT200EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

FQT7N10

Contextual Info: FQT7N10 N-Channel QFET MOSFET 100 V, 1.7 A, 350 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially

Contextual Info: FQT3P20 P-Channel QFET MOSFET -200 V, -0.67 A, 2.7 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

FQT13N06L

Contextual Info: FQT13N06L N-Channel QFET MOSFET 60 V, 2.8 A, 140 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially

Contextual Info: FQT7N10 N-Channel QFET MOSFET 100 V, 1.7 A, 350 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially