MOSFET SOT23-6 DUAL Search Results

Mosfet

Abstract: SSF2418E 2418E
Contextual Info: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and

Contextual Info: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance

ZXMN2088

Abstract: TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2
Contextual Info: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance

lm5112

Contextual Info: LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 LM5112 Tiny 7A MOSFET Gate Driver Check for Samples: LM5112 FEATURES DESCRIPTION • The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad

lm5112

Abstract: L132B
Contextual Info: LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 LM5112 Tiny 7A MOSFET Gate Driver Check for Samples: LM5112 FEATURES DESCRIPTION • The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad

ZXTC2045E6TC

Contextual Info: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 • B2 B1 Applications C2 MOSFET and IGBT gate driving E1 E2 Ordering information

DUAL NPN SOT23-6

Abstract: NPN SOT23-6 320 sot236 ZXTC2045E6TA marking E1 sot236 Surface mount NPN/PNP complementary transistor ZXTC2045E6 ZXTC2045E6TC MOSFET sot23-6 SOT23-6, complementary transistors
Contextual Info: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 B1 Applications • C2 B2 MOSFET and IGBT gate driving E1 E2 Ordering information

Contextual Info: 19-1951; Rev 3; 12/05 SOT23 Power-Supply Sequencers The MAX6819/MAX6820 are power-supply sequencers for dual-voltage microprocessors µPs and multivoltage systems. These devices monitor a primary supply voltage and enable/disable an external n-channel MOSFET

SETD

Abstract: MAX6820 MAX6819 MAX6819UT-T MAX6820UT-T
Contextual Info: 19-1951; Rev 3; 12/05 SOT23 Power-Supply Sequencers The MAX6819/MAX6820 are power-supply sequencers for dual-voltage microprocessors µPs and multivoltage systems. These devices monitor a primary supply voltage and enable/disable an external n-channel MOSFET

Contextual Info: Low Input Voltage, High Efficiency Synchronous Boost Converter with 1A Switch ISL9111, ISL9111A Features The ISL9111 and ISL9111A provide a power supply solution for single-cell, dual-cell, or three-cell alkaline, NiCd or NiMH battery-powered applications. The device has a typical 0.8V

MARKING 3B SOT23-6

Abstract: ISL9111EH30Z-T7A SOT23-6 pwm generator ISL9111-5 SOT23-6 MARKING 5b ISL9111 sot23-6 marking 3b gbad ISL9111AH33-EVZ
Contextual Info: Low Input Voltage, High Efficiency Synchronous Boost Converter with 1A Switch ISL9111, ISL9111A Features The ISL9111 and ISL9111A provide a power supply solution for single-cell, dual-cell, or three-cell alkaline, NiCd or NiMH battery-powered applications. The device has a typical 0.8V

FN7602

Abstract: ISL91113 GBAD ISL9111 3355 bourns ISL9111EHADJZ-T7A ISL9111AEH33Z-T mosfet J 3305 sot-23 body marking Intersil JESD22-A114F free
Contextual Info: Low Input Voltage, High Efficiency Synchronous Boost Converter with 1A Switch ISL9111, ISL9111A Features The ISL9111 and ISL9111A provide a power supply solution for single-cell, dual-cell, or three-cell alkaline, NiCd or NiMH battery-powered applications. The device has a typical 0.8V

LTC1981ES5

Abstract: dual high side MOSFET driver with charge pump LTC1981 LTC1982 Si3442DV Si6925DQ 720 mosfet sot23 LTC1154
Contextual Info: LTC1981/LTC1982 Single and Dual Micropower High Side Switch Controllers in SOT-23 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No External Components Required Internal Voltage Triplers Produce High Side Gate Drive for Logic Level FETs Ultralow Power:

dual high side MOSFET driver with charge pump

Abstract: 19812fs LTC1981 LTC1981ES5 LTC1982 Si3442DV Si6925DQ US1080 682 MARKING SOT-23 LTC1154
Contextual Info: LTC1981/LTC1982 Single and Dual Micropower High Side Switch Controllers in SOT-23 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No External Components Required Internal Voltage Triplers Produce High Side Gate Drive for Logic Level FETs Ultralow Power:

stu407d

Abstract: STU432S STU419S stm8309 STU432 STM6930A STM6922 STU426S STU3525NL stu309dh
Contextual Info: Selection Guide - Mosfet Product N Channel Product Rds on / m Ohm max Package Configuration Vds Vgs (±) ID PD (W) STF8220 DFN Dual-N 20 12 7.0 2 STA6610 PDIP-8 Dual-N 30 20 7.6 3 23.0 STA6620 PDIP-8 Dual-N 40 20 7.0 3 25.0 STA6968 PDIP-8 Dual-N 60 20 5.3

SOT23-6L

Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6
Contextual Info: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

dual high side MOSFET driver with charge pump

Abstract: ltpf LTC1154 BD01 LTC1982 LTC1982ES6 Si3442DV Si6925DQ
Contextual Info: Final Electrical Specifications LTC1982 Dual Micropower High Side Switch Controller in SOT-23 August 2000 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ No External Components Required VCC Range: 1.8V to 5V Internal Voltage Triplers Produce High Side

TPS2100

Abstract: TPS2101 TPS2102 TPS2103 TPS2104 TPS2105
Contextual Info: TPS2104, TPS2105 VAUX POWER-DISTRIBUTION SWITCHES SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000 features D D D D D D D D D D typical applications Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;

Contextual Info: TPS2104, TPS2105 VAUX POWER-DISTRIBUTION SWITCHES SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000 typical applications features D D D D D D D D D D Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;

Contextual Info: TPS2104, TPS2105 VAUX POWER-DISTRIBUTION SWITCHES SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000 features D D D D D D D D D D typical applications Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;

Contextual Info: TPS2100, TPS2101 VAUX POWER-DISTRIBUTION SWITCHES SLVS197D – JUNE 1999 – REVISED JUNE 2000 typical applications features D D D D D D D D D D Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;

TPS2100

Abstract: TPS2100D TPS2101 TPS2101D TPS2101DBV TPS2101DR TPS2100DBVR
Contextual Info: TPS2100, TPS2101 VAUX POWER-DISTRIBUTION SWITCHES SLVS197D – JUNE 1999 – REVISED JUNE 2000 features D D D D D D D D D D typical applications Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;

TPS2100

Abstract: TPS2101 TPS2102 TPS2103 TPS2104 TPS2105
Contextual Info: TPS2102, TPS2103 VAUX POWER-DISTRIBUTION SWITCHES SLVS234A – SEPTEMBER 1999 – REVISED APRIL 2000 features D D D D D D D D D D typical applications Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;

Contextual Info: TPS2102, TPS2103 VAUX POWER-DISTRIBUTION SWITCHES SLVS234A – SEPTEMBER 1999 – REVISED APRIL 2000 typical applications features D D D D D D D D D D Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;