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    MOSFET SOT23-6 DUAL Search Results

    MOSFET SOT23-6 DUAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET SOT23-6 DUAL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Mosfet

    Abstract: SSF2418E 2418E
    Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		SSF2418E 18mohm OT23-6 2418E Mosfet SSF2418E 2418E PDF

    Untitled

    Abstract: No abstract text available
    Text: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance


    Original     		ZXMN2088DE6 OT23-6 OT23-6 ZXMN2088DE6TA D-81541 PDF

    ZXMN2088

    Abstract: TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2
    Text: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance


    Original     		ZXMN2088DE6 OT23-6 OT23-6 ZXMN2088DE6TA D-81541 ZXMN2088 TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2 PDF

    lm5112

    Abstract: No abstract text available
    Text: LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 LM5112 Tiny 7A MOSFET Gate Driver Check for Samples: LM5112 FEATURES DESCRIPTION • The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad


    Original     		LM5112 SNVS234B LM5112 PDF

    lm5112

    Abstract: L132B
    Text: LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 LM5112 Tiny 7A MOSFET Gate Driver Check for Samples: LM5112 FEATURES DESCRIPTION • The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package SOT23 equivalent footprint or an 8-Lead exposed-pad


    Original     		LM5112 SNVS234B LM5112 ns/12 L132B PDF

    ZXTC2045E6TC

    Abstract: No abstract text available
    Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 • B2 B1 Applications C2 MOSFET and IGBT gate driving E1 E2 Ordering information


    Original     		ZXTC2045E6 OT23-6 OT236 ZXTC2045E6TA ZXTC2045E6TC ZXTC2045E6TC PDF

    DUAL NPN SOT23-6

    Abstract: NPN SOT23-6 320 sot236 ZXTC2045E6TA marking E1 sot236 Surface mount NPN/PNP complementary transistor ZXTC2045E6 ZXTC2045E6TC MOSFET sot23-6 SOT23-6, complementary transistors
    Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 B1 Applications • C2 B2 MOSFET and IGBT gate driving E1 E2 Ordering information


    Original     		ZXTC2045E6 OT23-6 OT236 ZXTC2045E6TA ZXTC2045E6TC DUAL NPN SOT23-6 NPN SOT23-6 320 sot236 ZXTC2045E6TA marking E1 sot236 Surface mount NPN/PNP complementary transistor ZXTC2045E6 ZXTC2045E6TC MOSFET sot23-6 SOT23-6, complementary transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1951; Rev 3; 12/05 SOT23 Power-Supply Sequencers The MAX6819/MAX6820 are power-supply sequencers for dual-voltage microprocessors µPs and multivoltage systems. These devices monitor a primary supply voltage and enable/disable an external n-channel MOSFET


    Original     		MAX6819/MAX6820 MAX6819/ MAX6820 MAX6819/MAX6820 PDF

    SETD

    Abstract: MAX6820 MAX6819 MAX6819UT-T MAX6820UT-T
    Text: 19-1951; Rev 3; 12/05 SOT23 Power-Supply Sequencers The MAX6819/MAX6820 are power-supply sequencers for dual-voltage microprocessors µPs and multivoltage systems. These devices monitor a primary supply voltage and enable/disable an external n-channel MOSFET


    Original     		MAX6819/MAX6820 MAX6819/ MAX6820 MAX6819/MAX6820 SETD MAX6819 MAX6819UT-T MAX6820UT-T PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Input Voltage, High Efficiency Synchronous Boost Converter with 1A Switch ISL9111, ISL9111A Features The ISL9111 and ISL9111A provide a power supply solution for single-cell, dual-cell, or three-cell alkaline, NiCd or NiMH battery-powered applications. The device has a typical 0.8V


    Original     		ISL9111, ISL9111A ISL9111 ISL9111A 100mA 240mA 5M-1994. MO-178AB. PDF

    MARKING 3B SOT23-6

    Abstract: ISL9111EH30Z-T7A SOT23-6 pwm generator ISL9111-5 SOT23-6 MARKING 5b ISL9111 sot23-6 marking 3b gbad ISL9111AH33-EVZ
    Text: Low Input Voltage, High Efficiency Synchronous Boost Converter with 1A Switch ISL9111, ISL9111A Features The ISL9111 and ISL9111A provide a power supply solution for single-cell, dual-cell, or three-cell alkaline, NiCd or NiMH battery-powered applications. The device has a typical 0.8V


    Original     		ISL9111, ISL9111A ISL9111 ISL9111A 100mA 240mA 5M-1994. MO-178AB. MARKING 3B SOT23-6 ISL9111EH30Z-T7A SOT23-6 pwm generator ISL9111-5 SOT23-6 MARKING 5b sot23-6 marking 3b gbad ISL9111AH33-EVZ PDF

    FN7602

    Abstract: ISL91113 GBAD ISL9111 3355 bourns ISL9111EHADJZ-T7A ISL9111AEH33Z-T mosfet J 3305 sot-23 body marking Intersil JESD22-A114F free
    Text: Low Input Voltage, High Efficiency Synchronous Boost Converter with 1A Switch ISL9111, ISL9111A Features The ISL9111 and ISL9111A provide a power supply solution for single-cell, dual-cell, or three-cell alkaline, NiCd or NiMH battery-powered applications. The device has a typical 0.8V


    Original     		ISL9111, ISL9111A ISL9111 ISL9111A 100mA 240mA 5M-1994. MO-178AB. FN7602 ISL91113 GBAD 3355 bourns ISL9111EHADJZ-T7A ISL9111AEH33Z-T mosfet J 3305 sot-23 body marking Intersil JESD22-A114F free PDF

    LTC1981ES5

    Abstract: dual high side MOSFET driver with charge pump LTC1981 LTC1982 Si3442DV Si6925DQ 720 mosfet sot23 LTC1154
    Text: LTC1981/LTC1982 Single and Dual Micropower High Side Switch Controllers in SOT-23 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No External Components Required Internal Voltage Triplers Produce High Side Gate Drive for Logic Level FETs Ultralow Power:


    Original     		LTC1981/LTC1982 OT-23 LTC1982) LTC1981) OT-23 LTC1153/LTC1154 LTC1981ES5 dual high side MOSFET driver with charge pump LTC1981 LTC1982 Si3442DV Si6925DQ 720 mosfet sot23 LTC1154 PDF

    dual high side MOSFET driver with charge pump

    Abstract: 19812fs LTC1981 LTC1981ES5 LTC1982 Si3442DV Si6925DQ US1080 682 MARKING SOT-23 LTC1154
    Text: LTC1981/LTC1982 Single and Dual Micropower High Side Switch Controllers in SOT-23 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No External Components Required Internal Voltage Triplers Produce High Side Gate Drive for Logic Level FETs Ultralow Power:


    Original     		LTC1981/LTC1982 OT-23 LTC1982) LTC1981) OT-23 LTC1153/LTC1154 dual high side MOSFET driver with charge pump 19812fs LTC1981 LTC1981ES5 LTC1982 Si3442DV Si6925DQ US1080 682 MARKING SOT-23 LTC1154 PDF

    stu407d

    Abstract: STU432S STU419S stm8309 STU432 STM6930A STM6922 STU426S STU3525NL stu309dh
    Text: Selection Guide - Mosfet Product N Channel Product Rds on / m Ohm max Package Configuration Vds Vgs (±) ID PD (W) STF8220 DFN Dual-N 20 12 7.0 2 STA6610 PDIP-8 Dual-N 30 20 7.6 3 23.0 STA6620 PDIP-8 Dual-N 40 20 7.0 3 25.0 STA6968 PDIP-8 Dual-N 60 20 5.3


    Original     		STF8220 STA6610 STA6620 STA6968 STM9926 STM4884A STM4410A SDM4410 STM480-40 stu407d STU432S STU419S stm8309 STU432 STM6930A STM6922 STU426S STU3525NL stu309dh PDF

    SOT23-6L

    Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6
    Text: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original     		STN6561 STN6561 OT-23-6L lSTN6561 ST2300 SOT23-6L SOT-23-6L CA SOT 25 marking 6l IDM-10 N -Channel power Sot 6 PDF

    dual high side MOSFET driver with charge pump

    Abstract: ltpf LTC1154 BD01 LTC1982 LTC1982ES6 Si3442DV Si6925DQ
    Text: Final Electrical Specifications LTC1982 Dual Micropower High Side Switch Controller in SOT-23 August 2000 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ No External Components Required VCC Range: 1.8V to 5V Internal Voltage Triplers Produce High Side


    Original     		LTC1982 OT-23 OT-23 LTC1153/LTC1154 LTC1155/LTC1255 LTC1163/LTC1165 LTC1623 LTC1710 1982i dual high side MOSFET driver with charge pump ltpf LTC1154 BD01 LTC1982 LTC1982ES6 Si3442DV Si6925DQ PDF

    TPS2100

    Abstract: TPS2101 TPS2102 TPS2103 TPS2104 TPS2105
    Text: TPS2104, TPS2105 VAUX POWER-DISTRIBUTION SWITCHES SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000 features D D D D D D D D D D typical applications Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;


    Original     		TPS2104, TPS2105 SLVS235A 250-m, 500-mA 100-mA OT-23-5 TPS2100 TPS2101 TPS2102 TPS2103 TPS2104 TPS2105 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS2104, TPS2105 VAUX POWER-DISTRIBUTION SWITCHES SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000 typical applications features D D D D D D D D D D Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;


    Original     		TPS2104, TPS2105 SLVS235A 250-mâ 500-mA 100-mA OT-23-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS2104, TPS2105 VAUX POWER-DISTRIBUTION SWITCHES SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000 features D D D D D D D D D D typical applications Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;


    Original     		TPS2104, TPS2105 SLVS235A 250-m, 500-mA 100-mA OT-23-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS2100, TPS2101 VAUX POWER-DISTRIBUTION SWITCHES SLVS197D – JUNE 1999 – REVISED JUNE 2000 typical applications features D D D D D D D D D D Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;


    Original     		TPS2100, TPS2101 SLVS197D 250-mâ 500-mA 10-mA OT-23-5 PDF

    TPS2100

    Abstract: TPS2100D TPS2101 TPS2101D TPS2101DBV TPS2101DR TPS2100DBVR
    Text: TPS2100, TPS2101 VAUX POWER-DISTRIBUTION SWITCHES SLVS197D – JUNE 1999 – REVISED JUNE 2000 features D D D D D D D D D D typical applications Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;


    Original     		TPS2100, TPS2101 SLVS197D 250-m, 500-mA 10-mA OT-23-5 TPS2100 TPS2100D TPS2101 TPS2101D TPS2101DBV TPS2101DR TPS2100DBVR PDF

    TPS2100

    Abstract: TPS2101 TPS2102 TPS2103 TPS2104 TPS2105
    Text: TPS2102, TPS2103 VAUX POWER-DISTRIBUTION SWITCHES SLVS234A – SEPTEMBER 1999 – REVISED APRIL 2000 features D D D D D D D D D D typical applications Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;


    Original     		TPS2102, TPS2103 SLVS234A 250-m, 500-mA 100-mA OT-23-5 TPS2100 TPS2101 TPS2102 TPS2103 TPS2104 TPS2105 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS2102, TPS2103 VAUX POWER-DISTRIBUTION SWITCHES SLVS234A – SEPTEMBER 1999 – REVISED APRIL 2000 typical applications features D D D D D D D D D D Dual-Input, Single-Output MOSFET Switch With No Reverse Current Flow No Parasitic Diodes IN1 . . . 250-mΩ, 500-mA N-Channel;


    Original     		TPS2102, TPS2103 SLVS234A 250-mâ 500-mA 100-mA OT-23-5 PDF