MOSFET SWITCH ULTRA FAST Search Results
MOSFET SWITCH ULTRA FAST Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LBUA5QJ2AB-828 | Murata Manufacturing Co Ltd | QORVO UWB MODULE |
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| LBUA5QJ2AB-828EVB | Murata Manufacturing Co Ltd | QORVO UWB MODULE EVALUATION KIT |
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| LXMS21NCMH-230 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag |
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| LXMSJZNCMH-225 | Murata Manufacturing Co Ltd | Ultra small RAIN RFID chip tag |
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| TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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MOSFET SWITCH ULTRA FAST Datasheets Context Search
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TDFN22-8Contextual Info: DATA SHEET AAT4616 Ultra High Precision Adjustable Current Limited Load Switch with Fault Flag General Description Features The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging |
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AAT4616 AAT4616 01940A TDFN22-8 | |
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Contextual Info: DATA SHEET AAT4616 Ultra High Precision Adjustable Current Limited Load Switch with Fault Flag General Description Features The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging |
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AAT4616 AAT4616 300ide 01940A | |
TDFN22-8Contextual Info: DATA SHEET AAT4616 Ultra High Precision Adjustable Current Limited Load Switch with Fault Flag General Description Features The AAT4616 SmartSwitch is a current limited P-channel MOSFET power switch designed for high side load switching applications. This switch operates with inputs ranging |
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AAT4616 AAT4616 201940B TDFN22-8 | |
TDFN22-8
Abstract: AAT4616
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AAT4616 AAT4616 201940C TDFN22-8 | |
404PI
Abstract: 409PI IXDD408SI 402PI 404SI 414PI 402SI RF MOSFET Driver "IGBT Drivers" IXDN
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OCR Scan |
O-263 O-220 414PI 414YI 414YM 414CI 414CM 414PI 414YI 414YM 404PI 409PI IXDD408SI 402PI 404SI 402SI RF MOSFET Driver "IGBT Drivers" IXDN | |
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Contextual Info: 10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch 100A IGBT and 99mΩ MOSFET ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency |
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10-FZ06NBA110FP-M306L28 00V/110A | |
FDFMA2P853
Abstract: 1A86
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FDFMA2P853 FDFMA2P853 1A86 | |
FDFMA2P853Contextual Info: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET |
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FDFMA2P853 FDFMA2P853 | |
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Contextual Info: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET |
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FDFMA2P853 FDFMA2P853 | |
FDFMA2P853Contextual Info: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET |
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FDFMA2P853 FDFMA2P853 | |
diode jaContextual Info: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET |
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FDFMA2P853 diode ja | |
FDFMA2P853Contextual Info: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET |
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FDFMA2P853 FDFMA2P853 | |
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Contextual Info: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET |
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FDFMA2P853 FDFMA2P853 | |
FDFMA2P853Contextual Info: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET |
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FDFMA2P853 FDFMA2P853 | |
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Contextual Info: Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20 V, –3.0 A, 120 m: Features General Description MOSFET: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low |
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Contextual Info: Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20 V, –3.0 A, 120 m: Features General Description MOSFET: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low |
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FDFMA2P859TContextual Info: Integrated P-Channel PowerTrench MOSFET and Schottky Diode –20 V, –3.0 A, 120 m: Features General Description MOSFET: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low |
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Contextual Info: TPS22912 www.ti.com SLVSB78 – APRIL 2012 Ultra-Small, Low on Resistance Load Switch with Controlled Turn-on Check for Samples: TPS22912 FEATURES DESCRIPTION • • The TPS22912 is a small, low rON load switch with controlled turn-on and contains a P-channel MOSFET |
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TPS22912 SLVSB78 TPS22912 | |
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Contextual Info: TPS22912 www.ti.com SLVSB78 – APRIL 2012 Ultra-Small, Low on Resistance Load Switch with Controlled Turn-on Check for Samples: TPS22912 FEATURES DESCRIPTION • • The TPS22912 is a small, low rON load switch with controlled turn-on and contains a P-channel MOSFET |
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TPS22912 SLVSB78 TPS22912 | |
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Contextual Info: TPS22912 www.ti.com SLVSB78 – APRIL 2012 Ultra-Small, Low on Resistance Load Switch with Controlled Turn-on Check for Samples: TPS22912 FEATURES DESCRIPTION • • The TPS22912 is a small, low rON load switch with controlled turn-on and contains a P-channel MOSFET |
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TPS22912 SLVSB78 TPS22912 | |
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Contextual Info: TPS22912 www.ti.com SLVSB78 – APRIL 2012 Ultra-Small, Low on Resistance Load Switch with Controlled Turn-on Check for Samples: TPS22912 FEATURES DESCRIPTION • • The TPS22912 is a small, low rON load switch with controlled turn-on and contains a P-channel MOSFET |
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TPS22912 SLVSB78 TPS22912 | |
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Contextual Info: TPS22912 www.ti.com SLVSB78 – APRIL 2012 Ultra-Small, Low on Resistance Load Switch with Controlled Turn-on Check for Samples: TPS22912 FEATURES DESCRIPTION • • The TPS22912 is a small, low rON load switch with controlled turn-on and contains a P-channel MOSFET |
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TPS22912 SLVSB78 TPS22912 | |
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Contextual Info: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra |
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APT56M50B2 APT56M50L O-264 O-247 | |
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Contextual Info: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra |
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APT56M50B2 APT56M50L O-264 APT56M50B2 O-247 | |