MOSFET SWITCHING Search Results

smd diode 46A

Abstract: equivalent smd mosfet IRF7205 IC MOSFET QG KRF7205 ld smd transistor smd mosfet
Contextual Info: MOSFET IC SMD Type HEXFET Power MOSFET KRF7205 IRF7205 Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V @ TA = 25

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: 2SK3787-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators

Contextual Info: 2SK3726-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

2sk3687-01mr

Contextual Info: 2SK3687-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

2SK3599-01MR

Abstract: 2sk3599 uninterruptible power supply
Contextual Info: 2SK3599-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

ufn330

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching

Contextual Info: FDS6614A N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

4025-C

Contextual Info: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

SDC40

Contextual Info: 2SK2875-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

7v71

Contextual Info: 2SK2760-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK2755-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK2764-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Marking D9N

Abstract: NID9N05ACL A 673 C2 transistor NID9N05ACLT4G 05AC NID9N05CLG
Contextual Info: NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP

Contextual Info: BLV4N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 2.2Ω Ω • Simple Drive Requirements ID 4A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

6680 MOSFET

Abstract: FDD6672A
Contextual Info: FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

2SK3597-01

Abstract: power supply 100v 30a schematic
Contextual Info: 2SK3597-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: FDP7042L / FDB7042L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Sj 47 diode

Abstract: power supply 100v 30a schematic
Contextual Info: 2SK3646-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

2SK3674-01L

Abstract: DIODE SJ 66
Contextual Info: 2SK3674-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply

ENA1510A

Abstract: a15102 40v 7.5a P-Channel N-Channel
Contextual Info: ECH8668 Ordering number : ENA1510A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8668 General-Purpose Switching Device Applications Features • • • • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

UFN140

Abstract: UFN143 kd 617
Contextual Info: POWER MOSFET TRANSISTORS “ ui 100 Volt, 0.085 Ohm N-Channel UFN142 ufni43 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

AUIRF7303Q

Abstract: auirf7303
Contextual Info: PD - 97654C AUTOMOTIVE GRADE AUIRF7303Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified*

Contextual Info: 2SK2874-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings T-pack S T-pack (L) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)