MOSFET TEST Search Results

MOSFET TEST Result Highlights (5)

Part	Manufacturer	Description
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

MOSFET TEST Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
210T2S Contextual Info: GU PhotoMOS AQS210TS, 210T2S TESTING GU PhotoMOS (AQS210TS, 210T2S) 3-channel (MOSFET & 2 optocoupler) or (2 MOSFET & optocoupler) SOP 16-pin type. 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type	Original	AQS210TS, 210T2S) 16-pin 083inch AQS210TS) AQS210T2S) 210T2S	PDF
AN002 Abstract: "curve tracer" ZERO VOLTAGE SWITCH Contextual Info: SYNC POWER CORP. Technical Review of N-Channel MOSFET Measurement 576 Curve Tracer Testing Report April 2005 Ver.1 MOSFET Products AN002 1 Measuring N-Channel MOSFET Characteristics Table of Contents Page 1. General Information. 3	Original	AN002 AN002 "curve tracer" ZERO VOLTAGE SWITCH	PDF
power BJT PNP Abstract: BJT pnp 45V vertical mosfet Contextual Info: SYNC POWER CORP. Technical Review of P-Channel MOSFET Measurement 576 Curve Tracer Testing Report April 2005 Ver.1 MOSFET Products AN001 1 Measuring P-Channel MOSFET Characteristics Table of Contents Page 1. General Information. 3	Original	AN001 power BJT PNP BJT pnp 45V vertical mosfet	PDF
rf power mosfet Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet Contextual Info: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings	Original	IXZ215N12L 175MHz rf power mosfet mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet	PDF
Contextual Info: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).	Original		PDF
EM6M1 Abstract: MOSFET IGSS 100A Contextual Info: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).	Original		PDF
IXZ316N60 Abstract: mosfet 50V Contextual Info: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V	Original	IXZ316N60 IXZ316N60 dsIXZ316N60 mosfet 50V	PDF
IXZ308N120 Abstract: ixzh ixzh08n120 Contextual Info: IXZH08N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200	Original	IXZH08N120 IXZ308N120 dsIXZH08N120 ixzh ixzh08n120	PDF
ixzr08n120a Contextual Info: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 1200 V ID25 = 8.0 A Symbol Test Conditions RDS on	Original	IXZR08N120 IXZR08N120A/B dsIXZR08N120A/B ixzr08n120a	PDF
IXZ318N50 Contextual Info: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V	Original	IXZ318N50 IXZ318N50 dsIXZ318N50	PDF
"RF MOSFETs" Abstract: 1 RF s 640 a 931 "RF MOSFET" transistor tl 187 IXZ308N120 ixzr08n120a IXYS RF IXZR08N120 5-486 731 MOSFET Contextual Info: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXZR08N120 IXZR08N120A/B IXZ308N120 dsIXZR08N120 "RF MOSFETs" 1 RF s 640 a 931 "RF MOSFET" transistor tl 187 ixzr08n120a IXYS RF IXZR08N120 5-486 731 MOSFET	PDF
ixzr18n50 Contextual Info: IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on	Original	IXZR18N50 IXZR18N50A/B dsIXZR18N50 ixzr18n50	PDF
Relay Matsua 12 volt Contextual Info: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch	Original	AQS210TS, 210T2S 16-Pin 083inch AQS210TS) AQS210T2S) AQS210TS Relay Matsua 12 volt	PDF
AQS210T2S Abstract: AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ Contextual Info: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch	Original	AQS210TS, 210T2S 16-Pin AQS210TS AQS210TS) AQS210T2S) AQS210T2S AQS210T2S AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ	PDF

AQS210T2S Abstract: AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ Contextual Info: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch	Original	AQS210TS, 210T2S 16-Pin AQS210TS) AQS210T2S) AQS210T2S AQS210T2S AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ	PDF
IXZ318N50 Contextual Info: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on ≤ 0.34 Ω VDSS	Original	IXZ318N50 dsIXZ318N50 IXZ318N50	PDF
Contextual Info: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOT Plust Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V	Original	Si4837DY Si4837DY-T1 S-31726--Rev. 18-Aug-03	PDF
Si4837DY Abstract: Si4837DY-T1 Contextual Info: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V	Original	Si4837DY Si4837DY-T1 18-Jul-08	PDF
AQS210T2S Abstract: AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ Contextual Info: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch	Original	AQS210TS, 210T2S 16-Pin AQS210TS) AQS210T2S) AQS210T2S AQS210T2S AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ	PDF
10BQ040 Abstract: EIA-541 IRF7807V MS-012AA Contextual Info: PD-94018A IRF7807V • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented	Original	PD-94018A IRF7807V IRF7807V EIA-481 EIA-541. 10BQ040 EIA-541 MS-012AA	PDF
AQS210T2S Abstract: AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ Contextual Info: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch	Original	AQS210TS, 210T2S 16-Pin 083inch AQS210TS) AQS210T2S) AQS210T2S AQS210T2S AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ	PDF
Si4837DY Abstract: Si4837DY-T1 Contextual Info: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V	Original	Si4837DY Si4837DY-T1 S-31726--Rev. 18-Aug-03	PDF
IXZ211N50 Abstract: IXZ2211N50 DSAE0059430 Contextual Info: IXZ2211N50 Z-MOS RF Power MOSFET Dual N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings Per Device VDSS TJ = 25°C to 150°C	Original	IXZ2211N50 IXZ211N50 dsIXZ2211N50 IXZ2211N50 DSAE0059430	PDF
FDD8N50NZ Abstract: FDD8N50 FDD8N50NZTM Contextual Info: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and	Original	FDD8N50NZ FDD8N50NZ FDD8N50 FDD8N50NZTM	PDF

MOSFET TEST Search Results

MOSFET TEST Result Highlights (5)

MOSFET TEST Datasheets Context Search

210T2S

AN002

power BJT PNP

rf power mosfet

EM6M1

IXZ316N60

IXZ308N120

ixzr08n120a

IXZ318N50

"RF MOSFETs"

ixzr18n50

Relay Matsua 12 volt

AQS210T2S

AQS210T2S

IXZ318N50

Si4837DY

AQS210T2S

10BQ040

AQS210T2S

Si4837DY

IXZ211N50

FDD8N50NZ