MOSFET TO-92 N-CHANNEL 20 VOLT Search Results

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

signal mosfet

Abstract: 22LL
Contextual Info: VN2222LL Preferred Device Small Signal MOSFET 150 mAmps, 60 Volts N−Channel TO−92 http://onsemi.com Features • Pb−Free Packages are Available* 150 mA, 60 V RDS on = 7.5 W MAXIMUM RATINGS Rating N−Channel Symbol Value Unit Drain −Source Voltage

bs108 mosfet

Abstract: mosfet to92 high current BS108 BS-108
Contextual Info: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage

PA-5R0H474-R

Abstract: LTC3535 LPS4012 LTC3535EDD MOS6020 MSS5131 MIP3226D3R3M LTC3528-2
Contextual Info: LTC3535 Dual Channel 550mA 1MHz Synchronous Step-Up DC/DC Converter DESCRIPTION FEATURES n n n n n n n n n n n n n n n Two Independent Step-Up Converters Each Channel Delivers 3.3V at 100mA from a Single Alkaline/NiMH Cell or 3.3V at 200mA from Two Cells VIN Start-Up Voltage: 680mV

BS108 relay driver

Abstract: BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D
Contextual Info: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage

NTE7232

Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Contextual Info: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case

vn2410l

Abstract: VN2410* mosfet
Contextual Info: VN2410L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N−Channel TO−92 http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDSS 240 Vdc Drain −Gate Voltage VDGR 240 Vdc Gate −Source Voltage − Continuous − Non−repetitive tp ≤ 50 µs

bs108 mosfet

Abstract: BS108 relay driver BS108 BS108ZL1
Contextual Info: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N–Channel TO–92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage

BS170

Abstract: MOSFET bs170 bs170 TO-92 pin diagram of bs170 TO-226 MARKING bs170 TO226 BS170RLRA BS170RLRAG to-92 mosfet
Contextual Info: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)

complementary MOSFET 2sk

Abstract: 2SK series transistor 2sk 2sk 2sj complementary mosfet 2sk to-92 2sk mosfet nec mosfet 2SK type UMOS-2 TO-220ISO
Contextual Info: Low voltage MOSFET Short reference guide Introduction As a leading supplier of PowerMOSFET devices, NEC Electronics offers an extensive range of over 500 different devices suitable for 0.25 µm UMOS-4 28M cell/cm2 to provide low on-resistance RDS(on), avalanche capability, low gate charge and lower leakage current.

22LL

Abstract: VN2222LL VN2222LLG to-92 mosfet VN2222LLRL VN2222LLRLRA VN2222LLRLRAG VN2222LLRLRM vn2222ll mosfet
Contextual Info: VN2222LL Preferred Device Small Signal MOSFET 150 mAmps, 60 Volts N−Channel TO−92 Features • Pb−Free Packages are Available* 150 mA, 60 V RDS on = 7.5 W MAXIMUM RATINGS Rating N−Channel Symbol Value Unit Drain −Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 MW)

2SK1020

Abstract: 2SK1020 equivalent CTU100
Contextual Info: 2SK1020 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3PL ø3.2 ±0.2 5 ±0.3 3 ±0.2 2 ±0.2 1.1 ±0.2 Applications

SMBJ5A

Abstract: irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928
Contextual Info: Computer Discretes & Standard ICs Selection Guide MOTHERBOARDS AND CONNECTING PORTS Video Port Arc-ing Protection DALC Parallel Port Termination ST1284 Audio Op-Amp Serial Port RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage

BC107 to92

Abstract: BC107 characteristic bs107 BC107 to-92
Contextual Info: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage

Contextual Info: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage

P-MOSFET

Abstract: mosfet 4800 micron resistor 0.6 um cmos process 3-Micron-CMOS-Process 4800 mosfet MOSFET dynamic parameters 1.2 Micron CMOS Process Family
Contextual Info: 3 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 6 µm Poly Pitch; 7 µm Metal Pitch • 7 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 10 Volts High Voltage Option • Low TCR Resistor Module

CMOS Process Family

Abstract: 0.6 um cmos process
Contextual Info: 3 Micron CMOS Process Family Features Process parameters 3µm • LOVMOS Process [3Volts 2.7~3.6 Low Voltage Option] Units • Double Poly / Double Metal 10 & 5 & 3volts • 6 µm Poly Pitch; 7 µm Metal Pitch Metal I pitch (line/space) 3/4 µm • 7 Volts Maximum Operating Voltage

0.6 um cmos process

Abstract: CMOS Process Family micron resistor TCR 1.2 Micron CMOS Process Family
Contextual Info: 3 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters LOVMOS Process 2.7~3.6 Volts Low Voltage Option Double Poly / Double Metal 6 µm Poly Pitch; 7 µm Metal Pitch 7 Volts Maximum Operating Voltage 10 Volts High Voltage Option

2N7000 MOSFET PIN DETAILS

Contextual Info: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Packages are Available* 200 mAMPS 60 VOLTS RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc

SMD R5D diode

Abstract: Zener diode smd marking code C24 smd MARKING r5b marking code R38 SMD Transistor smd marking code r55 R5C MARKING CODE SOT23 SMD r2f smd marking R5D SMD code R5D SMD r5d
Contextual Info: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing

Contextual Info: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing

2sk mosfet

Abstract: 2sk 30A MOSFET 25C1 2SK1020 P15A
Contextual Info: 2SK1020 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V g ss~ ± 30V Guarantee ■Applications

TSSOP-16

Contextual Info: Preliminary EUP2618 Triple Adjustable Output TFT-LCD DC-DC Converters DESCRIPTION FEATURES The EUP2618 triple-output DC-DC converter provides the regulated voltages required by active-matrix, thin-film transistor TFT liquid-crystal displays (LCDs). One high-power DC-DC converter and two low-power charge

2N7000 MOSFET PIN DETAILS

Abstract: 2N7000ZL1G 2n7000 mosfet 2n7000 2N7000G 2N7000RLRA 2N7000RLRAG 2N7000RLRM 2N7000RLRMG 2N7000RLRP
Contextual Info: 2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Packages are Available* 200 mAMPS 60 VOLTS RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc