MOSFET VDS 30V ID 18A TO 252 Search Results

Contextual Info: SSD3055 18A , 30V , RDS ON 22Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

40P03

Abstract: diode MARKING CODE 18A p-channel power mosfet 14A AF40P03 mosfet 30V 18A TO 252
Contextual Info: AF40P03 P-Channel Enhancement Mode Power MOSFET „ Features „ General Description -Lower On-Resistance -Simple Drive Requirement -Fast Switching Characteristic -RoHS Compliant -Pb Free Plating Product The TO-252 package is universally preferred for all commercial-industrial surface mount applications and

mosfet 30V 18A TO 252

Abstract: 2SJ601 smd 18A equivalent smd mosfet IC 46M S-108
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SJ601 TO-252 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 MAX. VGS = -4.0 V, ID =-18 A Low Ciss: Ciss = 3300 pF TYP. +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 46m

Mosfet 40P03GH

Abstract: 40p03gj 40p03gh 40p03 40P03G AP40P03GJ AP40P03
Contextual Info: AP40P03GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -30V RDS ON 28mΩ ID G -30A S Description G The TO-252 package is widely preferred for all commercial-industrial

mosfet 30V 18A TO 252

Abstract: mosfet VDS 30V ID 18A TO 252 smd transistor nc 61 smd 18A 2SK3402 ciss 18-A
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3402 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss : Ciss = 3200 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max

mosfet VDS 30V ID 18A TO 252

Abstract: 2SK3367 mosfet 30V 18A TO 252 smd transistor 26
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3367 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low on-resistance RDS on 1 = 9.0 m MAX. (VGS = 4.0 V, ID = 18 A) Low Ciss : Ciss = 2800 pF TYP. 2.3 Built-in gate protection diode

930 18a diode smd

Abstract: 930 18a 2SK3641 930 diode smd
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 15 A

SSM9971GH

Abstract: mosfet VDS 30V ID 18A TO 252 ssm9971gj
Contextual Info: SSM9971GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 60V R DS ON 36mΩ 25A ID G S Description G D S The SSM9971GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

SSM40P03

Contextual Info: SSM40P03 G H,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Low gate-charge BV DSS -30V Simple drive requirement R DS(ON) 28mΩ G Fast switching -30A ID S Description G D S The SSM40P03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

mosfet 30V 18A TO 252

Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V SSM40T03GH SSM40T03GJ SSM40
Contextual Info: SSM40T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge D Simple drive requirement Fast switching G Pb-free; RoHS compliant. BV DSS 30V R DS ON 25mΩ ID 28A S DESCRIPTION G D S The SSM40T03GH is in a TO-252 package, which is widely used for

mosfet 30V 18A TO 252

Abstract: W216 ssm40p03j SSM40
Contextual Info: SSM40P03GH,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Low gate-charge BV DSS -30V Simple drive requirement R DS ON 28mΩ G Fast switching -30A ID S Description G D S The SSM40P03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

AP4563GH

Contextual Info: AP4563GH Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH D1/D2 ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant S1 G1 S2 P-CH G2 TO-252-4L

40p03gj

Abstract: 40p03gh
Contextual Info: AP40P03GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D BVDSS -30V RDS ON Simple Drive Requirement Fast Switching Characteristic 28m ID G -30A S Description G The TO-252 package is widely preferred for all commercial-industrial

4563gh

Abstract: AP4563GH MOSFET N 30V 30A 252 4563g
Contextual Info: AP4563GH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH ▼ Simple Drive Requirement D1/D2 ▼ Good Thermal Performance ▼ Fast Switching Performance S1 G1 S2 P-CH G2 TO-252-4L Description Advanced Power MOSFETs from APEC provide the

IRL5Y7413CM

Contextual Info: PD - 94164A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.025Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

9936 mosfet

Abstract: IRFB18N50K IRFBL18N50K
Contextual Info: PD- 93928 PROVISIONAL IRFBL18N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and

Contextual Info: PD - 94164A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number BVDSS IRL5Y7413CM 30V RDS(on) 0.025Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRFB18N50K

Contextual Info: PD- 93926 PROVISIONAL IRFB18N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and

IRFN9140

Abstract: JANTX2N7236U JANTXV2N7236U
Contextual Info: PD - 91553D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9140 JANTX2N7236U JANTXV2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 91553E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

IRFN9140

Abstract: JANS2N7236U JANTX2N7236U JANTXV2N7236U
Contextual Info: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

Contextual Info: HY18N20D 200V / 18A N-Channel Enhancement Mode MOSFET 200V, RDS ON =92mW@VGS=10V, ID=10A Features TO-252 • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS,

2N7236U

Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
Contextual Info: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry