MOSFET VDS 30V ID 6A TO 252 Search Results

6a smd transistor

Abstract: transistor smd 6a equivalent smd mosfet PD-23 2SJ598 smd 6a transistor smd transistor 720 102-130 mosfet VDS 30V ID 6A TO 252
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SJ598 TO-252 RDS on 2 = 190 m MAX. (VGS = -4.0 V, ID =-6 A) Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max +0.28 1.50-0.1 Built-in gate protection diode +0.15 0.50-0.15

TSM10N06

Contextual Info: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

mosfet 600V 6A N-CHANNEL

Abstract: TSM6N60 mosfet 600V 60A mosfet VDS 30V ID 6A TO 252 TSM6N60CP ROG TSM6N60CH
Contextual Info: TSM6N60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 1.25 @ VGS =10V 6.0 Features ● ● ● Block Diagram High power and current handing capability. Low RDS(ON) 1.25mΩ (Max.)

mosfet y1

Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
Contextual Info: HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 30V, 12A

CHM6601PAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM6601PAGP CURRENT 16 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

N-Channel

Abstract: marking b14 diode B14 DIODE DIODE B14 TSM6N60CP
Contextual Info: TSM6N60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 1.25 @ VGS =10V 6 Features Block Diagram ● High power and current handing capability. ● Low RDS(ON) 1.25Ω (Max.)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low

15n03gh

Abstract: mosfet 15N03GH 15N03 15N03GJ 15n03GH mosfet marking codes transistors SSs AP15N03GJ
Contextual Info: AP15N03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 30V RDS ON 80mΩ ID G 15A S Description TO-252 package is widely preferred for all commercial-industrial

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: AP15N03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching 30V RDS ON 80mΩ ID G ▼ RoHS Compliant BVDSS 15A S Description TO-252 package is widely preferred for all commercial-industrial

AP9569GJ

Contextual Info: AP9569GH/J Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Fast Switching Characteristic ▼ RoHS Compliant BVDSS -40V RDS ON 90mΩ ID G -14A S Description G D The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage

APM3095P

Abstract: APM3095PU STD-020C
Contextual Info: APM3095PU P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON =95mΩ (typ.) @ VGS=-10V RDS(ON)=140mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

AP15N03GJ

Abstract: AP15N03GH
Contextual Info: AP15N03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 30V RDS ON 80mΩ ID G 15A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage

tu 20 c

Abstract: APM3095P APM3095PU
Contextual Info: APM3095PU P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON =95mΩ (typ.) @ VGS=-10V RDS(ON)=140mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available

3095P

Abstract: APM3095P M3095P J-STD-020A
Contextual Info: APM3095P P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-6A , RDS ON =95mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged G TO-252 Package D S

AP15N03H

Abstract: AP15N03J
Contextual Info: AP15N03H/J Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 30V RDS ON 80mΩ ID G 15A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage

Contextual Info: AP9569GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D -40V RDS ON Fast Switching Characteristic RoHS Compliant & Halogen-Free 90m ID G -14A S Description G D S The TO-252 package is widely preferred for all commercial-industrial

Contextual Info: APM3095PU P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-6A , RDS ON =95mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

Contextual Info: 2SK2652-01 FU JI N-channel MOS-FET 900V FAP-IIS Series > Features - 6A 2,5Q 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

Si4830

Abstract: Fast Switching mosfet SI3433B smd diode 615
Contextual Info: Notebook Table of Contents POWER MANAGEMENT, Charger Power. 3 POWER MANAGEMENT, CPU Power. 6

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251  DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

ssm9973gj

Abstract: RD33
Contextual Info: SSM9973GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 60V R DS ON 80mΩ 14A ID G S Description G D S The SSM9973GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited

15N03GH

Abstract: 15N03 15N03GJ
Contextual Info: AP15N03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D 30V RDS ON Simple Drive Requirement Fast Switching 80m ID G 15A S Description G TO-252 package is widely preferred for all commercial-industrial

L03A

Contextual Info: FU JI stuMoruajK 2SK2099-01L,S FAP-IIA Series > Features - N-channel MOS-FET 250V 0,85Q 6A ' 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications