MOSFET VDS 50 VGSTH Search Results

transistor smd code marking nc

Contextual Info: SO T6 66 NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench

PSMN3R0-60PS

Contextual Info: PSMN3R0-60PS N-channel 60 V 3.0 mΩ standard level MOSFET Rev. 01 — 23 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

PSMN5R6-100PS

Contextual Info: PSMN5R6-100PS N-channel 100 V 5.6 mΩ standard level MOSFET Rev. 01 — 23 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

BSS84AKS.115

Abstract: BSS84AKS TSSOP6 package
Contextual Info: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.

NXP SMD TRANSISTOR MARKING CODE s1

Abstract: BSS84AK
Contextual Info: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

psmn015 60ps

Abstract: PSMN015-60PS
Contextual Info: PSMN015-60PS N-channel 60 V 14.8 mΩ standard level MOSFET Rev. 02 — 22 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

BSS83 M74

Abstract: mosfet handbook PHILIPS MOSFET MARKING Mosfet n-channel BSS83 MDA251 MDA250 transistor DATA REFERENCE handbook MAM389 philips bss83
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS83 MOSFET N-channel enhancement switching transistor Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor

BSS84AKS

Contextual Info: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.

Contextual Info: 83B BSS84AKMB SO T8 50 V, single P-channel Trench MOSFET Rev. 1 — 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Dual P-Channel MOSFET

Abstract: g1 TRANSISTOR SMD MARKING CODE
Contextual Info: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

BSS84AKS

Abstract: TSSOP-6 BSS84AK
Contextual Info: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.

MOSFET TRANSISTOR SMD MARKING CODE ZA

Abstract: SC-101
Contextual Info: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

ixf55n50

Abstract: 50N50 24 volts 100 amperes smps 9 NA STR 2005 125OC eco-pac PSMG50
Contextual Info: ECO-PACTM 2 HiPerFETTM Power MOSFET in ECO-PAC 2 PSMG 50/05* ID25 VDSS RDSon trr Electrically Isolated Back Surface Single MOSFET Die I K10 Preliminary Data Sheet X18 A1 = 43 A = 500 V Ω = 100 mΩ < 250 ns LN9 K13 K15 *NTC optional MOSFET Symbol Conditions

Contextual Info: VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA

8/S 170 MOSFET TRANSISTOR

Contextual Info: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: D2 PA K PSMN5R6-100BS N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications

BSS84AKW

Abstract: BSS84AKW/DG/B2215 A1 SOT323 MOSFET P-CHANNEL
Contextual Info: SO T3 23 BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

A1 SOT323 MOSFET P-CHANNEL

Abstract: transistor sc-70 marking codes FET marking codes sc-70
Contextual Info: SO T3 23 BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

SOT669* PSMN017-60YS

Abstract: PSMN017-60YS
Contextual Info: PSMN017-60YS N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: SO T2 3 BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

PSMN5R6-100PS

Contextual Info: PSMN5R6-100PS N-channel 100 V 5.6 mΩ standard level MOSFET Rev. 02 — 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and