MOSFET VGS 1.2V VDS 5V Search Results

Contextual Info: AOC2421 8V P-Channel MOSFET General Description Product Summary The AOC2421 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS ID (at VGS=-2.5V)

Contextual Info: AOC2413 8V P-Channel MOSFET General Description Product Summary The AOC2413 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS ID (at VGS=-2.5V)

Contextual Info: AOC2413 8V P-Channel MOSFET General Description Product Summary The AOC2413 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS ID (at VGS=-2.5V)

Contextual Info: AOC2421 8V P-Channel MOSFET General Description Product Summary The AOC2421 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS ID (at VGS=-2.5V)

Contextual Info: AOC2422 8V N-Channel MOSFET General Description Product Summary The AOC2422 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 3.5A ID (at VGS=2.5V)

Contextual Info: AOC2422 8V N-Channel MOSFET General Description Product Summary The AOC2422 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 3.5A ID (at VGS=2.5V)

Contextual Info: AOC2414 8V N-Channel MOSFET General Description Product Summary The AOC2414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 4.5A ID (at VGS=2.5V)

Contextual Info: AOC2414 8V N-Channel MOSFET General Description Product Summary The AOC2414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 4.5A ID (at VGS=2.5V)

Contextual Info: AOC2413 8V P-Channel MOSFET General Description Product Summary The AOC2413 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS -8V -3.5A ID (at VGS=-2.5V)

Contextual Info: AOC2421 8V P-Channel MOSFET General Description Product Summary The AOC2421 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS -8V -2.5A ID (at VGS=-2.5V)

Contextual Info: AOC2414 8V N-Channel MOSFET General Description Product Summary The AOC2414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 4.5A ID (at VGS=2.5V)

Contextual Info: AOC2422 8V N-Channel MOSFET General Description Product Summary The AOC2422 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating. VDS 8V 3.5A ID (at VGS=2.5V)

INJ0003AX

Abstract: INK0003AX RT3U33M
Contextual Info: RT3U33M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET DESCRIPTION RT3U33M is a composite transistor built with INK0003AX OUTLINE DRAWING Unit：mm and INJ0003AX chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current.

INJ0001AX

Abstract: INK0001AX RT3U11M
Contextual Info: RT3U11M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET DESCRIPTION RT3U11M is a composite transistor built with INK0001AX OUTLINE DRAWING Unit：mm and INJ0001AX chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current.

Contextual Info: AON2400 8V N-Channel MOSFET General Description Product Summary The AON2400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

INJ0001AX

Abstract: INK0001AX RT3U11M
Contextual Info: PRELIMINARY RT3U11M Composite Transistor For high speed switching Silicon N-channel + P-channel MOSFET DESCRIPTION RT3U11M is a composite transistor built with OUTLINE DRAWING INK0001AX and INJ0001AX chips in SC-88 package. Unit：mm 2.1 ① ⑥ 0.65 ② ⑤

INJ0003AX

Abstract: INK0003AX RT3U33M
Contextual Info: PRELIMINARY RT3U33M Composite Transistor For high speed switching Silicon N-channel + P-channel MOSFET DESCRIPTION RT3U33M is a composite transistor built with OUTLINE DRAWING INK0003AX and INJ0003AX chips in SC-88 package. Unit：mm 2.1 ① ⑥ 0.65 ② ⑤

INK0001AC

Abstract: INK0001AC1 INK0001AU1 INK0001AM1 INK0001AT2 SC-75A
Contextual Info: ＩＮＫ0001AＸ SERIES High speed switching Silicon N-channel MOSFET OUTLINE DRAWING INK0001AT2 INK0001AM1 1.21 0.425 ② ③ 0～0.1 APPLICATION INK0001AU1 INK0001AC1 1.7 1.0 Ｊ K 1 Ｃ 0.32 ③ 0.12 0～0.1 T-USM package Ｂ ② 0.55 Ｋ・１ 0.7 0.5

INK0002AC1

Abstract: INK0002AM1 INK0002AT2 INK0002AU1 SC-75A
Contextual Info: ＩＮＫ0002AＸ SERIES High speed switching Silicon N-channel MOSFET OUTLINE DRAWING INK0002AT2 INK0002AM1 1.21 0.425 ② ③ 0～0.1 APPLICATION INK0002AU1 INK0002AC1 1.7 1.0 Ｊ K ２ Ｃ 0.32 ③ 0.12 0～0.1 T-USM package Ｂ ② 0.55 Ｋ・２ 0.7 0.5

INK0003AU1

Abstract: SC-75A INK0003AT2 INK0003A INK0003AC1 INK0003AM1
Contextual Info: ＩＮＫ0003AＸ SERIES High speed switching Silicon N-channel MOSFET OUTLINE DRAWING INK0003AT2 INK0003AM1 1.21 0.425 ② ③ 0～0.1 APPLICATION INK0003AU1 INK0003AC1 1.7 1.0 Ｊ K ３ Ｃ 0.32 ③ 0.12 0～0.1 T-USM package Ｂ ② 0.55 Ｋ・３ 0.7 0.5

INJ0001AC1

Abstract: INJ0001AM1 INJ0001AT2 INJ0001AU1 SC-75A
Contextual Info: ＩＮJ0001AＸ SERIES High speed switching Silicon P-channel MOSFET OUTLINE DRAWING INJ0001AT2 INJ0001AM1 1.21 0.425 ② ③ 0～0.1 APPLICATION INJ0001AU1 INJ0001AC1 1.7 1.0 T-USM package Ｊ Ｊ １ Ｂ Ｃ 0.32 ③ 0.12 0～0.1 0.7 Ｊ・１ ② 0.55 0.5

INK0002AX

Abstract: RT3K22M channel mosfet
Contextual Info: RT3K22M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K22M is a composite transistor built with two INK0002AX OUTLINE DRAWING Unit：mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65

INJ0002AX

Abstract: INK0002AX RT3U22M
Contextual Info: RT3U22M Composite Transistor For high speed switching Silicon N-channel+P-channel MOSFET DESCRIPTION RT3U22M is a composite transistor built with INK0002AX OUTLINE DRAWING Unit：mm and INJ0002AX chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current.

INJ0003AC1

Abstract: INJ0003AM1 INJ0003AT2 INJ0003AU1 SC-75A
Contextual Info: ＩＮJ0003AＸ SERIES High speed switching Silicon P-channel MOSFET OUTLINE DRAWING INJ0003AT2 INJ0003AM1 1.21 0.425 ② ③ 0～0.1 APPLICATION INJ0003AU1 INJ0003AC1 1.7 1.0 T-USM package Ｊ Ｊ ３ Ｂ Ｃ 0.32 ③ 0.12 0～0.1 0.7 Ｊ・３ ② 0.55 0.5