MOSFET VGS 5V 5A Search Results

83524

Abstract: FDD106AN06LA0 FDD106AN06LA0T FDD107AN06LA0 71e4
Contextual Info: FDD107AN06LA0 N-Channel PowerTrench MOSFET 60V, 10A, 107mΩ Features Applications • r DS ON = 92mΩ (Typ.), VGS = 5V, ID = 10A • Motor / Body Load Control • Qg(tot) = 4.2nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

M057 power control systems

Abstract: FDD45AN06LA0
Contextual Info: FDD45AN06LA0 N-Channel PowerTrench MOSFET 60V, 22A, 45mΩ Features Applications • r DS ON = 39mΩ (Typ.), VGS = 5V, ID = 22A • Motor / Body Load Control • Qg(tot) = 8.3nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

KP-69

Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
Contextual Info: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

Contextual Info: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

FDP24AN06LA0

Abstract: diode marking N9 356 FDP24AN FDB24AN06LA0 KP-69
Contextual Info: FDB24AN06LA0 / FDP24AN06LA0 N-Channel PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

FDD24AN06LA0

Contextual Info: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

FDD24AN06LA0

Abstract: mosfet 30V 18A TO 252
Contextual Info: FDD24AN06LA0 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

53A8

Contextual Info: SSG4431 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 5A - 30V 1 75 @VGS = - 5V 2 3 90 @VGS = - 4.5V 4 D (1,5,8) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable.

list of P channel power mosfet

Abstract: Power MOSFET p-Channel n-channel dual UTM4052 40v 7.5a P-Channel N-Channel
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL „ FEATURES * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @ VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V

Contextual Info: SSM4862 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOP-8 8 RDS(ON) (m ) Max 7 6 5 50 @VGS = 10V 1 2 65 @VGS = 5V 5A 60V 75 @VGS = 4.5V 3 4 D2 (5, 6) D1 (7, 8) FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable.

ssg8

Abstract: MOSFET TSSOP-8 dual n-channel SSG8405
Contextual Info: SSG8405 Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 25 @VGS = 10V 30V 6.5A 35 @VGS = 5V 1 40 @VGS = 4.5V 2 3 6 5 4 D (1) D (8`) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (mΩ) Max 45 @VGS = - 10V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL FEATURES „ SOP-8 * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V

APM4052D

Abstract: APM4052D* application notes apm4052 APM4052DU 40v 7.5a P-Channel N-Channel STD-020C APM4052DU4
Contextual Info: APM4052DU Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description N-Channel 40V/7.5A, RDS(ON)= 30mΩ (typ.) @ VGS= 10V RDS(ON)= 46mΩ (typ.) @ VGS= 5V • P-Channel -40V/-6A, Top View of TO-252-4 RDS(ON)= 40mΩ (typ.) @ VGS= -10V •

40v 7.5a P-Channel N-Channel

Abstract: UTM4052 TO-252-4
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL FEATURES „ SOP-8 * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V

FDD044AN03L

Abstract: FDU044AN03L alternator diode 35a 12v
Contextual Info: FDD044AN03L / FDU044AN03L N-Channel PowerTrench MOSFET 30V, 35A, 4.4mΩ Features Applications • rDS ON = 3.6mΩ (Typ.), VGS = 4.5V, ID = 35A • 12V Automotive Load Control • Qg(5) = 48nC (Typ.), VGS = 5V • Starter / Alternator Systems • Low Miller Charge

FDD068AN03L

Abstract: FDU068AN03L
Contextual Info: FDD068AN03L / FDU068AN03L N-Channel PowerTrench MOSFET 30V, 35A, 6.8mΩ Features Applications • rDS ON = 5.7mΩ (Typ.), VGS = 4.5V, ID = 35A • 12V Automotive Load Control • Qg(5) = 24nC (Typ.), VGS = 5V • Starter / Alternator Systems • Low Miller Charge

AN7254

Abstract: AN7260 AN9321 AN9322 HUF76413P3 TB334
Contextual Info: HUF76413P3 Data Sheet December 2001 22A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUF76413P3 Features • Ultra Low On-Resistance - rDS(ON) = 0.049Ω, VGS = 10V - rDS(ON) = 0.056Ω, VGS = 5V

AN7254

Abstract: AN9321 AN9322 HUFA76413P3 TB334 55E-1 76413P
Contextual Info: HUFA76413P3 Data Sheet December 2001 22A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUFA76413P3 Features • Ultra Low On-Resistance - rDS(ON) = 0.049Ω, VGS = 10V - rDS(ON) = 0.056Ω, VGS = 5V

diode 106E

Abstract: AN7254 AN7260 AN9321 AN9322 HUF76407P3 TB334 76407p 125E4
Contextual Info: HUF76407P3 Data Sheet December 2001 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUF76407P3 Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V

76407p

Abstract: 42E1 AN7254 AN9321 AN9322 HUFA76407P3 TB334 diode 106E
Contextual Info: HUFA76407P3 Data Sheet December 2001 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUFA76407P3 Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V

APM4052D

Abstract: apm4052 APM4052DU4 APM4052D* application notes apm405
Contextual Info: APM4052DU4 Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description D1 N-Channel D2 40V/7.5A, S1 G1 RDS(ON)= 30mΩ (typ.) @ VGS= 10V RDS(ON)= 46mΩ (typ.) @ VGS= 5V • S2 G2 P-Channel Top View of TO-252-4 -40V/-6A, RDS(ON)= 40mΩ (typ.) @ VGS= -10V

APM4052D

Abstract: apm4052 APM4052DU4 APM4052D* application notes APM4052DU PDA50 40v 7.5a P-Channel N-Channel
Contextual Info: APM4052DU4 Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description D1 N-Channel D2 40V/7.5A, S1 G1 S2 G2 RDS(ON)= 30mΩ (typ.) @ VGS= 10V RDS(ON)= 46mΩ (typ.) @ VGS= 5V • P-Channel Top View of TO-252-4 -40V/-6A, RDS(ON)= 40mΩ (typ.) @ VGS= -10V

Contextual Info: SSM4462 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (m ) Max 7 6 5 50 @VGS = 10V 1 2 65 @VGS = 5V 5.5A 60V 3 4 75 @VGS = 4.5V D (5, 6, 7, 8) FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable.

Contextual Info: Single N-channel MOSFET ELM32402LA-S •General description ■Features ELM32402LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=20A Rds(on) < 50mΩ (Vgs=5V) Rds(on) < 85mΩ (Vgs=2.5V)