MOSFET XB Search Results
MOSFET XB Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK422G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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MOSFET XB Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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CP Clare RELAY
Abstract: vw polo
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OCR Scan |
XCA170 XCB170 XS170 XAA170 XBB170 XBA170 IAA170P IBB170 IAB170 IAD170P CP Clare RELAY vw polo | |
spw -079 transformer
Abstract: samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492
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1-06A spw -079 transformer samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492 | |
TL494 car charger schematic diagram
Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
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accurat49565 TL494 car charger schematic diagram samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram | |
MOSFET IRF 630Contextual Info: vx-b’J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S Case : E-pack 1 i : iate 2 4 1 IIraln 3 : Source [Unit : mm] ‘I - 1; -‘J 1 -7 $, &I 11 2 3-, P12, 7-l Q f ‘g ( 7’: $ 1 1 Lead type is available. See P. 12, 7-l |
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marking code r4c
Abstract: marking code R96 mosfet marking c8 ST Microelectronics marking R4d SMM665 SMT4504 marking R99 R9C marking marking RAE
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SMT4504 marking code r4c marking code R96 mosfet marking c8 ST Microelectronics marking R4d SMM665 SMT4504 marking R99 R9C marking marking RAE | |
Contextual Info: 5LP01SS Ordering number : EN6622B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 5LP01SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Halogen free compliance Specifications |
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5LP01SS EN6622B | |
Contextual Info: 5LP01SS Ordering number : EN6622A 5LP01SS P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol |
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EN6622A 5LP01SS | |
Ta2040Contextual Info: 5LP01M Ordering number : EN6135A 5LP01M P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol |
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5LP01M EN6135A Ta2040 | |
Contextual Info: 5LP01S Ordering number : EN6666A P-Channel Silicon MOSFET 5LP01S General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol |
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EN6666A 5LP01S | |
mosfet xbContextual Info: MCH6650 Ordering number : ENA1195 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6650 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. |
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MCH6650 ENA1195 PW10s, 900mm20 A1195-4/4 mosfet xb | |
Contextual Info: 5LP01C Ordering number : EN6619A P-Channel Silicon MOSFET 5LP01C General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions |
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EN6619A 5LP01C | |
TA2040
Abstract: TA-2040 ta 2040
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EN6135A 5LP01M TA2040 TA-2040 ta 2040 | |
5LP01C
Abstract: TA-2036
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5LP01C EN6619A 5LP01C TA-2036 | |
Contextual Info: Ordering number : ENN6621 5LP01SP P-Channel Silicon MOSFET 5LP01SP Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2180 [5LP01SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 |
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ENN6621 5LP01SP 5LP01SP] | |
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Contextual Info: 5LP01S Ordering number : EN6666B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 5LP01S General-Purpose Switching Device Applications Features • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C |
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5LP01S EN6666B | |
Contextual Info: 5LP01M Ordering number : EN6135B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 5LP01M General-Purpose Switching Device Applications Features • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C |
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5LP01M EN6135B | |
Contextual Info: Ordering number : ENN6621 5LP01SP P-Channel Silicon MOSFET 5LP01SP Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2180 [5LP01SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 |
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ENN6621 5LP01SP 5LP01SP] | |
TA2040
Abstract: TA-2040 5LP01M marking xb ta 2040
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5LP01M EN6135A TA2040 TA-2040 5LP01M marking xb ta 2040 | |
5LP01S
Abstract: D2000
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5LP01S EN6666A 5LP01S D2000 | |
5LP01SSContextual Info: 5LP01SS Ordering number : EN6622A SANYO Semiconductors DATA SHEET 5LP01SS P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C |
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5LP01SS EN6622A 5LP01SS | |
TA2040
Abstract: TA-2040
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ENN6135 5LP01M 5LP01M] TA2040 TA-2040 | |
Contextual Info: Ordering number : ENN6620 5LP01N P-Channel Silicon MOSFET 5LP01N Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2178 [5LP01N] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 |
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ENN6620 5LP01N 5LP01N] | |
TA2042Contextual Info: Ordering number : ENN6622 5LP01SS P-Channel Silicon MOSFET 5LP01SS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2179 [5LP01SS] 0.3 1.4 0.25 0.1 2 0.3 1 0.45 |
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ENN6622 5LP01SS 5LP01SS] TA2042 | |
Contextual Info: 5LP01M 5LP01M Ordering number : EN6135A P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage |
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5LP01M EN6135A 5LP01M/D |