MOTOROLA 039 31 Search Results
MOTOROLA 039 31 Datasheets Context Search
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vk200* FERROXCUBE
Abstract: MRF137 3950K MOTOROLA TRANSISTOR 974
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MRF137 vk200* FERROXCUBE 3950K MOTOROLA TRANSISTOR 974 | |
MRF580
Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
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MRF580 MRF581 MRFC581 MRF580A, MRF581A, MRFC581A ic tms 1000 MRF580A A581 2771 17t Motorola 581 | |
MOTOROLA mac15 TRANSISTOR
Abstract: MCR225-2FP 2FP TRANSISTOR mac21B motorola transistor mac15 MJF10012 MJF16006A RECTIFIER 638 MOTOROLA tolerancing "Power Semiconductor Applications"
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T2500BFP T2500DFP T2500MFP T2500NFP MAC21B-4FP MAC218-6FP MAC218-8FP MAC218-10FP MAC228-4FP MAC228-6FP MOTOROLA mac15 TRANSISTOR MCR225-2FP 2FP TRANSISTOR mac21B motorola transistor mac15 MJF10012 MJF16006A RECTIFIER 638 MOTOROLA tolerancing "Power Semiconductor Applications" | |
Contextual Info: Packaging Information Tape and Reel Specifications and Packaging Specifications Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure |
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OD-123, SC-59, SC-70/SOT-323, OT-23, OT-143 OT-223, SO-14, SO-16, | |
Contextual Info: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices |
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MRF9060M/D MRF9060MR1 MRF9060MBR1 | |
NIPPON CAPACITORSContextual Info: MOTOROLA Order this document by MRF5S9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9100NR1 RF Power Field Effect Transistors MRF5S9100NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100MR1 Designed for broadband commercial and industrial applications with |
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MRF5S9100/D MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 46duct MRF5S9100MBR1 NIPPON CAPACITORS | |
A113
Abstract: MRF9060MBR1 MRF9060MR1
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MRF9060M/D MRF9060MR1 MRF9060MBR1 MRF9060MR1 A113 MRF9060MBR1 | |
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices |
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MRF9030M/D MRF9030MR1 MRF9030MBR1 | |
VIPer 32
Abstract: TO272
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MRF9030M/D MRF9030MR1 MRF9030MBR1 VIPer 32 TO272 | |
Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices |
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MRF9045MR1/D MRF9045MR1 MRF9045MBR1 | |
hatching machine
Abstract: NIPPON CAPACITORS A113 AN1955 MRF5S9100MBR1 MRF5S9100MR1 MRF5S9100NBR1 MRF5S9100NR1
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MRF5S9100/D MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 hatching machine NIPPON CAPACITORS A113 AN1955 MRF5S9100MBR1 | |
MRF9030MBR1
Abstract: MRF9030MR1 TO-270-2
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MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 TO-270-2 | |
733WContextual Info: MOTOROLA Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 Designed for broadband commercial and industrial applications with |
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MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 733W | |
sd317
Abstract: Motorola 3-326 transistor SS3672 BD317 BD318 BD315 BD-316 H2525 transistor BP 109 S357
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BD315, BD316 BD317, BD318. BD315 BD317 BD318 AN-415) b3b755M sd317 Motorola 3-326 transistor SS3672 BD-316 H2525 transistor BP 109 S357 | |
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MCR22-6
Abstract: MCR22-8 mcr22 R/MCR22-6D
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MCR22-6/D O-226AA MCR22-6 MCR22-8 O-226AA) MCR22-6D MCR22-8 mcr22 R/MCR22-6D | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon BCW68GLT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc |
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BCW68GLT1 236AB) | |
A113
Abstract: MRF9045MBR1 MRF9045MR1
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MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1 A113 MRF9045MBR1 | |
JB MARKING SOT-23
Abstract: DELTA fan bfb
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MMBTH10LT1 OT-23 O-236AB) JB MARKING SOT-23 DELTA fan bfb | |
MARKING CODE 2l SC70-6Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT5401LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage |
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MMBT5401LT1 236AB) MARKING CODE 2l SC70-6 | |
8031 Intel Microprocessor
Abstract: 8048 intel microprocessor fuctional block diagram of telemetry siemens analog input modules
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MX971 P-LCC-44, P-MQFP-64 MX97102 64kbit/s PM0473 MX97102QC MX97102S 8031 Intel Microprocessor 8048 intel microprocessor fuctional block diagram of telemetry siemens analog input modules | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH24LT1 VHF Mixer Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 • Designed for • fT = 400 MHz Min @ 8 mA 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol |
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MMBTH24LT1 OT-23 O-236AB) | |
marking H2A sot-23Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MMBT404ALT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB Symbol Value Unit Collector–Emitter Voltage |
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MMBT404ALT1 236AB) marking H2A sot-23 | |
ic 556Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BSS63LT1 COLLECTOR 3 PNP Silicon 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Emitter Voltage RBE = 10 kΩ VCER 2 CASE 318 – 08, STYLE 6 |
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BSS63LT1 236AB) ic 556 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage |
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BSV52LT1 236AB) |