MOTOROLA 100 W AMPLIFIER Search Results

Contextual Info: MOTOROLA SC X S T RS /R F 12E D | b3fc.72S4 000054=1 2 | T ”7*f MOTOROLA SEMICONDUCTOR TECHNICAL DATA CA2875R CA2875RH The RF Line W ideband L in e a r A m p lifie rs . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability

714h

Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line W ideband Linear Am plifier . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with temperature

MRF421 equivalent

Abstract: mrf421
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF421 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP

transistor MRF317

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal outpul amplifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W

MRF-393

Abstract: MRF393 equivalent transistor rf "30 mhz" AN 240 Motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF393 The RF Line NPN Silicon Push-Pull RF Power Transistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 100 W, 30 to 500 MHz CONTROLLED ‘Q”

5201 IC equivalent

Abstract: MRF326 UG-58
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF326 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. 40 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER

motorola rf Power Transistor mrf317

Abstract: hfc4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W

Transistor TP 2307

Abstract: motorola rf Power Transistor mrf317 F317
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F317 The RF Line NPN Silicon RF P o w er Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W

MRF317

Abstract: transistor MRF317
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W

mj802

Contextual Info: MOTOROLA Order this document by MJ802/D SEMICONDUCTOR TECHNICAL DATA M J802 H igh-Pow er NPN Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR

sc 2922

Abstract: CA2890B
Contextual Info: motorola sc xstrs/r f ise o f b3t?asq ooaassb t | MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA CA2890 CA2890B CA2890H The RF Line W id e b a n d Linear A m p lifie rs ., designed for amplifier applications in 50 to 100 ohm system s requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability

Contextual Info: MOTOROLA SC XSTRS/R F 12E o | fc.3t.7SSM QQÛflSSS Ô | T - TV ~09 -oi MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA CA2885 CA2885H The RF Line W id e b a n d L in e a r A m p lif ie r s . . designed for amplifier applications in 50 to 100 ohm system s requiring wide

MRF421 equivalent

Abstract: mrf421
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minimum Gain = 10 dB

mj4502

Contextual Info: MOTOROLA Order this document by MJ4502/D SEMICONDUCTOR TECHNICAL DATA M J4502 H igh-Pow er PNP Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR

2443 MOTOROLA transistor

Abstract: High-Power NPN Silicon Power Transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP Minimum Gain = 10 dB

CA4812H

Abstract: motorola linear CA4812 MOTOROLA wideband hybrid amplifiers 1313 motorola motorola 747 01-mfd chip CA4S12
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 1 ■ MOTb MOTOROLA ■ SE M IC O N D U C T O R TECHNICAL DATA CA4812 CA4812H The RF Line W id e b a n d Linear A m p lifie rs . d e sign e d for am plifier ap p lication s in 50 to 100 o h m sy st e m s requiring w ide

MRF340

Abstract: AMO 0210 transistor s97
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE » b3b?aS4 • SEMICONDUCTOR ■■ OOTMS^ 3 ■ T -3 3 -0 5 TECHNICAL DATA MRF340 The RF Line 8W 100-150 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR N PN S IL IC O N . . .designed p rim arily for use in V H F am plifiers w ith amplitude

CQ 20.000

Abstract: MRF421 equivalent MRF421 1N4997
Contextual Info: M í ir l\ z i MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W PEP

VK200 19 4B INDUCTOR

Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power TVansistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 M H z frequency range. • 100 W, 30 to 500 MHz CONTROLLED “Q”

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS

5251f

Contextual Info: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single

CA2820

Abstract: CA2820H MOTOROLA wideband hybrid amplifiers S2422 30mH choke ltsj
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA C A 2820 CA2820H The RF Line W id e b a n d L in e a r A m p lifie rs . . . designed fo r am p lifie r applications in 50 to 100 ohm systems requiring w ide bandw idth, low noise and lo w distortion. This hybrid provides excellent gain stability

5800c

Abstract: 5800-C
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA C A 5800C C A 5800C S The RF Line W ideband L in ear A m p lifiers . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain stability with