MOTOROLA 235 MIL Search Results

10H516

Contextual Info: M MOTOROLA Military 10H516 Triple Line Receiver ELECTRICALLY TESTED PER: 5962-8750201 HP0 The 10H516 is a functional/pinout duplication of the standard MECL10K family part, with 100% improvement in clock frequency and propagation delay and no increase in power-supply current.

10H516

Contextual Info: M MOTOROLA Military 10H516 Triple Line Receiver ELECTRICALLY TESTED PER: 5962-8750201 The 10H516 is a functional/pinout duplication of the standard MECL10K family part, with 100% improvement in clock frequency and propagation delay and no increase in power-supply current.

MOTOROLA 2n2920

Abstract: 2N2920 2N2920JAN
Contextual Info: MOTOROU Order this document by 2N2920JANID SEMICONDUCTOR TECHNICAL DATA @ 2N2920JAN, JTX, JTXV, JANS Processed per MIL4-I ,111, t ,11111 411 .,.:,>$’ \.>.l , c*\~ ~!.?,:$,! a- 9500/355 ual N,PNSilicon Small+ ignal Transistors .!. 3 Unit Vdc Vdo VEBO Emitter+ase Vohge

t10812

Abstract: Jensen B 17038 70-12911-04 Jensen* B 17038 B1182 70-12911-2 an 17830 A 009-036-9-001 sangamo capacitor rotary potentiometer dual 60k
Contextual Info: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com MALLORY CONTROLS - WIREWOUND AND SWITCH PRODUCTS

70-12911-04

Abstract: 70-12911-2 t10812 20k ohm potentiometer T-10812-71 70-12911-4 Westinghouse CO 8 HELICOPTER bell 76301 18K838263
Contextual Info: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com WIREWOUND AND SWITCH PRODUCTS Type R Potentiometer Reference Data

Contextual Info: W MOTOROLA Military 10H506 Triple 4-3-3 Input NOR Gate ELECTRICALLY TESTED PER: 5962-8756401 The 10H506 is a Triple 4-3-3 input NOR gate. This MECL10H part is a function­ al/pinout duplication of the standard MECL 10K family part, with 100% improve­ ment in propagation delay, and no increase in power-supply.

e104

Abstract: DL140 MC100EL04 MC10EL04
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2ĆInput AND/NAND MC10EL04 MC100EL04 The MC10EL/100EL04 is a 2-input AND/NAND gate. The device is functionally equivalent to the E104 device with higher performance capabilities. With propagation delays and output transition times

Contextual Info: ^ M O TO R O LA Military 10H506 Triple 4-3-3 Input NOR Gate ELECTRICALLY TESTED PER: 5962-8756401 The 10H506 is a Triple 4-3-3 input NOR gate. This MECL10H part is afunction­ al/pinout duplication of the standard MECL 10K family part, with 100% improve­

Contextual Info: M O T O R O L A Order this document by MCM6706CR/D SEMICONDUCTOR TECHNICAL DATA MCM6706CR Product Preview 32K x 8 Bit Static Random Access Memory J PACKAGE 300 MIL SOJ CASE 857-02 The MCM6706CR is a 262,144 bit static random access memory organized as 32,768 words of 8 bits. Static design eliminates the need for external clocks

t-10812-92

Abstract: 889912-8 m60rk MG15K M15RK Minn Kota MG120R westinghouse t500 T-10812-111 M15R
Contextual Info: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com WIREWOUND AND SWITCH PRODUCTS Type M Potentiometer Reference Data

Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MCM6706CR/D SEMICONDUCTOR TECHNICAL DATA MCM6706CR Product Preview Freescale Semiconductor, Inc. 32K x 8 Bit Static Random Access Memory J PACKAGE 300 MIL SOJ CASE 857–02 The MCM6706CR is a 262,144 bit static random access memory organized

D 4206 TRANSISTOR

Abstract: 7402 motorola DIODE MOTOROLA 633 motorola 549 diode Motorola 581 MA8051CT-ND 3-063 motorola 731 motorola 901 704 16 08 55 transistor motorola 236
Contextual Info: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

MA8051CT-ND

Contextual Info: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

L 3055 motorola

Contextual Info: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

DIODE 709 1334

Contextual Info: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

3224W-1-502E

Contextual Info: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

Contextual Info: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

NI-360HF

Abstract: MRFG35010 MTP23P06V RO4350 DIODE Z5
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from

MC10H131

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual D Type Master-Slave Flip-Flop MC10H131 The MC10H131 is a MECL 10H part which is a functional/pinout duplication of the standard MECL 10K family part, with 100% improvement in clock speed and propagation delay and no increase in power–supply current.

Most transceiver

Abstract: E2005 E2003T E2001 E2003 E2004 E2007 E200X
Contextual Info: SURFACE MOUNT 10BASE-T INTERFACE MODULES Designed for AMD, DEC, LSI, Motorola, and National Transceivers Fully integrated for Adapter Cards, Hubs, and Motherboard applications Designed to meet IEEE 802.3i-1993 10Base-T specifications Low profile surface mount package

J360

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power FSeld-Effect Transistors MRF175GU M RF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband

714P

Abstract: CA901 DIN45004B
Contextual Info: MOTOROLA Order this document by CA901/D SEMICONDUCTOR TECHNICAL DATA The RF Line VHF/UHF CATV Amplifiers CA901 Designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers

CTB128

Abstract: MHW8182A XMD128
Contextual Info: MOTOROLA Order this document by MHW8182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel 860 MHz CATV Amplifier MHW8182A • Specified for 77 and 128–Channel Performance • Broadband Power Gain  @ f = 860 MHz Gp = 18.9 dB Typ 18 dB GAIN 860 MHz

Contextual Info: MOTOROLA Order this document by CA901/D SEMICONDUCTOR TECHNICAL DATA VHF/UHF CATV Amplifiers CA901 Designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold metal system.