MOTOROLA 813 TRANSISTOR Search Results

2n5642

Abstract: 2N5642 motorola 2N5642 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5642 T he R F L in e 20 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed prim arily for wideband large-signal am plifier stages in the 1 2 5 -1 7 5 M H z frequency range. •

Motorola 2N6083

Abstract: sem 2106 2N6083
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3tj?2S4 00^4120 MOTOROLA Ô MOTb T -3 5 ~ u • SEM ICONDUCTOR i TECHNICAL DATA 2N6083 The R F Line 30 W - 175 MHz 2 RF POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for 1 2.5 V o lt V H F large-signal am plifier applications

MRF232

Abstract: H546
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF232 The RF Line 7.5 W - 9 0 M Hz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON .design ed for 12.5 Volt, mid-band large-signal amplifier appli­ cations in industrial and commercial FM equipment operating in the

2n6082

Contextual Info: T -3 2 H I MOTOROLA SC XSTRS/R F MbE D b 3 b ?2 S 4 00*14153 2 « N O T b MOTOROLA I SEMICONDUCTOR ^ TECHNICAL DATA 2N6082 The R F L in e 25 W - 175 M H z RF POWER TRANSISTOR NPN SILICO N NPN S IL IC O N R F P O W ER T R A N S IS T O R S . . . designed for 12.5 V o lt V H F large-signal am plifier applications

2N6082

Abstract: transistor 0132 2N 2N6082 MOTOROLA RF VK200 rfc vk200 rfc with 6 turns MOTOROLA 2N motorola transistor 307 oo70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6082 T h e R F L in e 25 W - 175 MHz RF POWER TRANSISTOR N P N S IL IC O N NPN S IL IC O N RF POWER T R A N S IS T O R S . . . designed for 12.5 V o lt V H F large-signal am plifier applications required in com m ercial and industrial equipm ent operating to

IC SEM 2105

Abstract: RF POWER TRANSISTOR NPN, motorola transistor 0132 2N
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 2N6082 The RF Line 2 5 W - 175 M H z RF POWER TRANSISTOR NPN SILIC O N NPN S IL IC O N R F POW ER T R A N S IS T O R S . . . designed fo r 12.5 V o lt V H F large-signal a m plifier applications required in commercial and industrial equipm ent operating to

56-590-65-3B Ferrite Beads

Abstract: NI-880 MRF19090
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S MRF19090SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and

56-590-65-3B Ferrite Beads

Abstract: T491X226K035AS4394 T495X106K035AS4394 MRF19090
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S MRF19090SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and

MOSFET Transistors IRL

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

22 Z1

Abstract: z14 SMT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

MRF19030

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and

j721

Abstract: j435 MRF19030
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r equenc ies f ro m 1 .8 to 2 .0 GH z . Su i ta b l e for FM, TD MA , C D MA and

567 tone

Abstract: 100B100JCA500X CDR33BX104AKWS MRF19060 MRF19060R3 MRF19060SR3
Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

100B100JCA500X

Abstract: CDR33BX104AKWS MRF19060 MRF19060R3 MRF19060SR3
Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

MRF19030

Contextual Info: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with

MRF19030

Contextual Info: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to

MRF19030

Abstract: 400S MRF19030R3 MRF19030SR3
Contextual Info: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with

motorola b34

Abstract: MRF19090 56-590-65/3B 465B MRF19090S MRF19090SR3 T495X106K035AS4394 B34 motorola LAMBDA SEMICONDUCTORS
Contextual Info: MOTOROLA Order this document by MRF19090/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S MRF19090SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with

MRF19090

Contextual Info: MOTOROLA Order this document by MRF19090/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.9 to

MRF19090

Abstract: 56-590-65/3B 465B MRF19090S MRF19090SR3 Lambda HK
Contextual Info: MOTOROLA Order this document by MRF19090/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S MRF19090SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with

MRF19030

Abstract: 400S MRF19030R3 MRF19030SR3
Contextual Info: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.