MOTOROLA AN938 Search Results

MRF548

Abstract: MRF531 MRF548 MOTOROLA MRF542 MRF531 motorola LG CRT MRF534 motorola AN938
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 MOTOROLA 00^4730 2 ■MOTb - T - 3 3 - ¿ ^5 SEMICONDUCTOR TECHNICAL DATA MRF531 The R F Line HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for high voltage and high current f j switching appli­

motorola 1N4148

Abstract: motorola AN938 an938 MRF553 motorola rf Power Transistor ferrite L8 1N4148 302-J-1 MRF5536
Contextual Info: MOTOROLA Order this document by MRF553/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF553 Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

AN938

Abstract: motorola AN938 motorola rf Power Transistor MRF557 MRF557/D
Contextual Info: MOTOROLA Order this document by MRF557/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF557 Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

MRF557

Contextual Info: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line NPN Silicon RF Low Power TVansistor . . . designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W

motorola AN938

Abstract: MRF555 AN938 motorola rf Power Transistor 15 w RF POWER TRANSISTOR NPN
Contextual Info: MOTOROLA Order this document by MRF555/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF555 Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W

AN-938

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pou1 = 1.5 W Common Emitter Power Gain = 12.5 dB Typ

1h31

Abstract: J107 DIODE J57 diode j143
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor . . . designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum G ain = 11.5 dB

Contextual Info: MOTOROLA O rder this docum ent by MRF553/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF553 Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

ferroxcube 56-590-65

Abstract: motorola AN938
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed prim arily for wideband large signal predriver stages in the 800 MHz frequency range. • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor Designed prim arily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB

mrf555

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilicon RF Low Pow er Transistor MRF555 Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB Typ

BH Rf transistor

Abstract: AN-938 AN938
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed prim arily for w ideband large signal predriver stages in the VHF frequency range. • • Specified @ 12.5 V, 175 MHz Characteristics O utput Power = 1.5 W Minim um Gain = 11.5 dB

j134 transistor

Abstract: MRF555
Contextual Info: MOTOROLA • SEMICONDUCTOR TECH N ICA L DATA The R F Line NPN Silicon RF Low Power Transistor . . . designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB Typ

transistor 2469

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed primarily for w ideband large signal predriver stages in the V H F frequency range. • Specified @ 12.5 V, 175 M H z Characteristics O utput Pow er = 1 .5 W 1.5 W, 175 MHz

motorola AN938

Abstract: motorola gm 900 317D-01 AN938 MHW2000 MHW2001 MHW2002 capacitor iesa
Contextual Info: Order this data sheet by MHW2000/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8F& Product Preview Monolithic RF MHW2000 MHW2001 MHW20Q2‘. 8’ ‘ pw -r Three-stage silicon monolithic RF amplifier designed primarily for land-mobile radio transmitter exciters. Biasing networks and interstate dc blocks are included on-chip. All

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silicon RF Low Power Transistor D e signed primarily for wideband large signal predriver stage s in the U H F frequency range. • Specified @ 12.5 V, 470 M H z Characteristics @ P out = 1.5 W C om m on Emitter Pow er G ain = 12;5 dB Typ

transistor j37

Contextual Info: MOTOROLA O rder this docum ent by MRF557/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF557 D esigned p rim a rily for w id e b a n d large sig n a l p re d riv e r s ta g e s in th e 800 MHz frequency range. • Specified a 12.5 V, 870 MHz Characteristics

motorola AN938

Abstract: MRF567 mrf56
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line 1.5 W 870 M H z RF LOW POWER TRANSISTOR NPN SILICON RF LOW POWER TRANSISTOR N P N SILICON . . . d e s ig n e d p rim a rily fo r w id e b a n d large s ig n a l p redrive r stages in the 800 M H z fre q u en cy range.

UC3843 spice model

Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
Contextual Info: BR101/D REV 28 Technical and Applications Literature Selector Guide and Cross References Effective Date 1st Half 1998 Semiconductor Products Sector Technical and Applications Literature Selector Guide and Cross References ALExIS, Buffalo, Bullet-Proof, BurstRAM, CDA, CMTL, Ceff-PGA, Customer Defined Array, DECAL, Designerís, DIMMIC,

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu