MOTOROLA BIPOLAR TRANSISTOR Search Results
MOTOROLA BIPOLAR TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
|
NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
|
||
| TPCP8515 |
|
NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
|
||
| TTC021 |
|
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
|
||
| 2SC5198 |
|
NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) |
|
||
| TTC022 |
|
NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
|
MOTOROLA BIPOLAR TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
POWER BJTs
Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
|
Original |
AN1540/D AN1540 AN1540/D* POWER BJTs AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time | |
MGW20N120
Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
|
Original |
MGW20N120/D MGW20N120 MGW20N120/D* TransistorMGW20N120/D MGW20N120 transistor d 1557 305 Power Mosfet MOTOROLA | |
MGY25N120Contextual Info: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
Original |
MGY25N120/D MGY25N120 MGY25N120 | |
MGY40N60
Abstract: motorola 6810
|
Original |
MGY40N60/D MGY40N60 MGY40N60 motorola 6810 | |
MJ 6810
Abstract: motorola 6810 J 6810 D MGY40N60 TRANSISTOR J 6810
|
Original |
MGY40N60/D MGY40N60 MGY40N60/D* MJ 6810 motorola 6810 J 6810 D MGY40N60 TRANSISTOR J 6810 | |
motorola 039 31
Abstract: 039 E 31 motorola MGW12N120
|
Original |
MGW12N120/D MGW12N120 IGBTMGW12N120/D motorola 039 31 039 E 31 motorola MGW12N120 | |
MGW20N120Contextual Info: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW20N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
Original |
MGW20N120/D MGW20N120 IGBTMGW20N120/D MGW20N120 | |
MGY25N120Contextual Info: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGY25N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
Original |
MGY25N120/D MGY25N120 MGY25N120 | |
transistor motorola 236
Abstract: MGY25N120
|
Original |
MGY25N120/D MGY25N120 MGY25N120/D* transistor motorola 236 MGY25N120 | |
motorola 6810
Abstract: MJ 6810 MGY40N60
|
Original |
MGY40N60/D MGY40N60 motorola 6810 MJ 6810 MGY40N60 | |
305 Power Mosfet MOTOROLA
Abstract: Transistor motorola 418 MGW30N60
|
Original |
MGW30N60/D MGW30N60 MGW30N60/D* 305 Power Mosfet MOTOROLA Transistor motorola 418 MGW30N60 | |
MGP20N60Contextual Info: MOTOROLA Order this document by MGP20N60/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGP20N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
Original |
MGP20N60/D MGP20N60 MGP20N60 | |
MGW20N120Contextual Info: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
Original |
MGW20N120/D MGW20N120 MGW20N120 | |
motorola 039 31
Abstract: MGW12N120 MGW12N
|
Original |
MGW12N120/D MGW12N120 motorola 039 31 MGW12N120 MGW12N | |
|
|
|||
Transistor motorola 418
Abstract: 305 Power Mosfet MOTOROLA MGW30N60
|
Original |
MGW30N60/D MGW30N60 MGW30N60/D* Transistor motorola 418 305 Power Mosfet MOTOROLA MGW30N60 | |
motorola 039
Abstract: MGW20N120
|
Original |
MGW20N120/D MGW20N120 O-247 O-247 IGBTMGW20N120/D motorola 039 MGW20N120 | |
GY25N120
Abstract: n120 30 igbt
|
OCR Scan |
MGY25 O-264 GY25N120 0E-05 0E-04 0E-03 0E-02 0E-01 GY25N120 n120 30 igbt | |
150 nJContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW12N120 Insulated G ate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high |
OCR Scan |
O-247 MGW12N120 150 nJ | |
|
Contextual Info: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 12N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
OCR Scan |
MGW12N120/D 12N120 | |
|
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW 2 0 N 120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high |
OCR Scan |
O-247 20N120 0E-02 0E-01 0E-05 0E-04 | |
|
Contextual Info: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
OCR Scan |
MGW20N 120/D 20N120 MGW20N120/D | |
|
Contextual Info: MOTOROLA Order this document by MGY25N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GY25 N 120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
OCR Scan |
MGY25N 120/D MGY25N120/D | |
BD136
Abstract: MJD47 MRF20060R MRF20060RS MURS160T3 rohm mtbf
|
Original |
MRF20060R/D MRF20060R MRF20060RS MRF20060R) MRF20060R BD136 MJD47 MRF20060RS MURS160T3 rohm mtbf | |
|
Contextual Info: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts |
Original |
MRF20060R/D MRF20060R MRF20060RS MRF20060R | |