MOTOROLA LINEAR HF Search Results

2N3772 motorola

Abstract: 2N3771 1N5825 2N3772 2N6257 MSD6100 motorola 2n3771
Contextual Info: MOTOROLA Order this document by 2N3771/D SEMICONDUCTOR TECHNICAL DATA 2N3771* 2N3772 High Power NPN Silicon Power Transistors *Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. 20 and 30 AMPERE

Contextual Info: MOTOROLA Order this document by 2N3771/D SEMICONDUCTOR TECHNICAL DATA 2N 3771* 2 N 3772 High Power NPN Silicon Power Transistors ‘ Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching applications.

2n3772

Abstract: 2N3771 motorola 2n3771 LB2T 2N3771 power circuit
Contextual Info: MOTOROLA Order this document by 2N3771/D SEMICONDUCTOR TECHNICAL DATA 2N 3771* 2N 3772 High Pow er NPN Silicon Pow er Transistors 'Motorola Preferred Device . . . designed for linear amplifiers, series pass regulators, and inductive switching applications.

Lp1001

Abstract: CBO15
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1001 LP1001A The RF Line NPN Silicon High-Frequency Transistors The LP1001 is designed for CATV and other Broadband linear applications. This Motorola series of small-signal plastic transistors offers superior quality

SOT23 JEDEC standard orientation pad size

Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is

ZT2907A

Abstract: PZT2907AT3 ON MARKING P2F
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E p itaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is

mrf3096

Abstract: transistors equivalent 9012 F3096 IFR 964
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF3094 MRF3095 MRF3096 The RF Line M icrowave Linear Power Transistors . . . designed for Class A, common emitter linear power amplifiers. • 9.0-12 dB 1.55-1.65 GHz 0.5-1.6 WATTS MICROWAVE LINEAR POWER TRANSISTORS Specified 20 Volt, 1.6 GHz Characteristics

rohm mtbf

Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

motorola p1f

Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for

MJ15023 EQUIVALENT

Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —

BU108

Abstract: MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —

Contextual Info: MOTOROLA Order this document by MRF3104/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF3104 MRF3105 MRF3106 Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics:

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF3104 MRF3105 MRF3106 The RF Line M icrowave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 Output Power Power Gain

LP1001

Abstract: LP1001A
Contextual Info: MOTOROLA Order this document by LP1001/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors LP1001 LP1001A The LP1001 is designed for CATV and other Broadband linear applications. This Motorola series of small–signal plastic transistors offers superior quality

MARKING P2F

Abstract: PZT2907AT3 1N916 PZT2222AT1 PZT2907AT1 motorola P2F
Contextual Info: MOTOROLA Order this document by PZT2907AT1/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is

mallory 170

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15090 The RF Line NPN Silicon RF Power TVansistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

william orr

Abstract: 2204B Granberg MOTOROLA linear handbook EB38 papp EB-38 Nippon capacitors
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by EB38/D SEMICONDUCTOR ENGINEERING BULLETIN EB38 MEASURING THE INTERMODULATION DISTORTION OF LINEAR AMPLIFIERS Freescale Semiconductor, Inc. Prepared by: Helge Granberg Circuits Engineer, SSB The measured distortion of a linear amplifier, normally

Contextual Info: MOTOROLA Order this document by MRF862/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF862 Motorola Preferred Device Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the

MPSU04

Abstract: MPSU03 MPS-U04 MPS-U03
Contextual Info: MOTOROLA SC XSTRS/R F 15E D | b3fc,7SS4 0005401 b | T - 3 1 -0 7 MOTOROLA MPS-U03 MPS-U04 SEMICONDUCTOR TECHNICAL DATA NPN SILICON ANNULAR VOLTAGE AMPLIFIER TRANSISTORS A # y » NPN SILICON AMPLIFIER TRANSISTORS * . . designed horizontal drive applications, high-voltage linear

Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRW53502 The RF Line Microwave Linear Power TVansistor . . . designed primarily for large-signal output and driver amplifier stages in the 1.0 to 3.0 GHz frequency range. • Designed for Class A, Common-Emitter Linear Power Amplifiers

Motorola Microwave power Transistor

Abstract: MRF3095 BALLAST MOTOROLA motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRF3095/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Linear Power Transistor MRF3095 Designed for Class A, common emitter linear power amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics Output Power — 0.5, 0.8, 1.6 Watts

transistors equivalent 9012

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Linear Power Transistors MRF3094 MRF3095 Designed for Class A, common emitter linear power amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics Output Power — 0.5, 0.8,1.6 Watts Gain — 9.0-12 dB

ZENER DIODE 47

Abstract: zener diode 4.7 v c031 diode linear amplifier 470-860 AE50070 2N2219 MOTOROLA 4L126 TRANSISTOR MOTOROLA c031 ZENER DIODE 4.7
Contextual Info: MOTOROLA SC X S T R S / R F MbE D • ^ ^ MOTOROLA ■SEMICONDUCTOR i h HOTb b3b72SH QOTbäaS T h h h h h h h ih h h h i TECHNICAL DATA TPV657 The RF Line UHF Linear Pow er Transisto r 6 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . . designed for high power stages in Band V TV transposer am plifiers. Gold metallized

motorola p1f

Abstract: SOT-223 P1f MARKING P1F P1F motorola p1f sot-223 PZT2222AT1 PZT2222AT3 PZT2907AT1 SMD310
Contextual Info: MOTOROLA Order this document by PZT2222AT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for