MOTOROLA MJ TRANSISTORS Search Results

JE4353

Abstract: 2U 34 mje4343 motorola MJE4340
Contextual Info: MOTOROLA SC 12E XS TRS/R F 0 § MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 0005355 7 | NPN PNP MJE4340 MJE4341 MJE4342 MJE4343 MJË4350 MJE4351 MJE4352 MJE4353 T - 33-13 T ^ 31 -1 3 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON

JE182

Abstract: JE171 JE181 JE172 MJE1B2
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Complementary Plastic Silicon Power Transistors MJE171* MJ E 172* . . . designed for low power audio amplifier and low current, high speed switching applications. NPN MJE181* • Collector-Emitter Sustaining Voltage —

MJ15011

Abstract: 92 0151 MJ15012 XSTR
Contextual Info: MOTOROLA SC 6367254 iXSTRS/R DË”|t.3t.75SM D G f l l l l h F> MOTOROLA S C XSTRS/R F 9 6 D '8 U 16 D T - 3 3 -IS N P U MOTOROLA MJ15011 SEMICONDUCTOR PNP TECHNICAL DATA MJ 15012 A d v a n c e In fo r m a tio n 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

2N6034-2N6039

Abstract: buc ku 1N5825 369A-13 MJD6036 MJD6039 MSD6100 transistor 228 npn motorola
Contextual Info: MOTOROLA Order this document by MJ D6036/D SEMICONDUCTOR TECHNICAL DATA NPN M JD 6036 Com plem entary Darlington Power Transistors PNP M JD 6039 DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages

transistor mj 3055

Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
Contextual Info: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •

Scans-053

Contextual Info: Order this document by MRFIC0930/D MJ MOTOROLA — . M RFIC0930 Advance Information 900 MHz GaAs Low Noise Am plifier w ith Gain Control Designed primarily for use in 900 MHz wireless communication systems such as GSM, AMPS, and Industrial, Scientific, and Medical (ISM band

7MC-81282

Abstract: 7MC81282 3361C 7MC8128
Contextual Info: Mj MOTOROLA MC3361C Low Power Narrowband FM IF The M C 3361C includes an O scillator, M ixer, Lim iting A m plifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute S w itch. T his d e v ic e is d e s ig n e d fo r use in FM dual c o n ve rsio n

Contextual Info: Orc er ' Y s c’a 'a s'ioe* MOTOROLA i bocíí.': SEMICONDUCTOR TECHNICAL DATA MJ E 18002 M JF18002 Designer’s Data Sheet SWITCHMODE™ M otorola Preferred D e v ice s NPN B ipolar Pow er Transistor For S w itching Pow er Supply A pplications The MJE/MJF18002 have an applications specific state-of-the-art die designed for use

MJH16032

Abstract: MJE16032 MJH16034 P6302 circuit 7403 u3 AM503 MJE16034 mje16
Contextual Info: MQTORCLA SC XSTRS/R F 12E 0 § b3fc,7SS4 000542=1 T | T -3 S -I3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16032 MJ E 16034 MJH16032 MJH16034 Designer's Data Sheet IMPIM Silicon Power Transistors Switchmode III Series T h e se tra n s is to rs are d esig n e d fo r h ig h -vo ltag e, hig h -sp eed , p o w e r s w itc h in g in in d u c­

J14002

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high-power amplifier and switching circuit applications, • • • High Current Capability — lc Continuous = 60 Amperes

transistor MJ 15024

Abstract: MOTOROLA MJ15024 mj16022 15024 MJ15022 MJ15024 Motorola MJ15022 J15024
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA HDH MJ15022 MJ15024* Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • • ‘Motorola P r t f f r»d Dtvtoo

2SC2922 SANKEN

Abstract: MJ15024 MJ15025 BDY37A SDT604 sanken 2sc2922 sanken 2sa1216 STX10 2SA1117 SDT60 MRF492A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max hFE *T on ON) Min (Hz) 140 140 140 140 140 140 145 150 160 160 200 200 200 200 250 250 200 250 125 125 15 15 15 15 15 15 15 15 80 80 125 15 Max k)N Max (A) (8)

MOTOROLA MJ15023

Abstract: TRANSISTOR 3611 MOTOROLA POWER TRANSISTOR rev 6 mj15025 motorola mj 15025 mj16025 MJ15025
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M J15023 M J15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • • ‘ M otorola Preferred D«v c«

MHPM6B10A60D1

Abstract: MHPM6B10A60D Dimensioning Inverter
Contextual Info: MOTOROLA Order this document by MHPM6B10A60D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B10A60D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT

motorola e6 SCHEMATIC

Abstract: MHPM6B15A120D
Contextual Info: MOTOROLA Order this document by MHPM6B15A120D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B15A120D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT

200 amp 120 V igbt

Abstract: MHPM6B20A60D
Contextual Info: MOTOROLA Order this document by MHPM6B20A60D/D SEMICONDUCTOR TECHNICAL DATA MHPM6B20A60D Hybrid Power Module Motorola Preferred Device 6–Pack Integrated Power Stage This module integrates Six IGBT’s in a 3–phase IGBT inverter configuration. The output inverter utilizes advanced insulated gate bipolar transistors IGBT

AN1403

Abstract: NMOS MODEL PARAMETERS SPICE PMOS MODEL PARAMETERS SPICE mj04 74ACxxx 74ACTXXX
Contextual Info: AN1403 Application Note  I/O FACT Model Kit Prepared by Willard Tu FACT Applications Engineering This application note provides the SPICE information necessary to allow the customer to perform system level interconnect modelling for the Motorola FACT logic

ESM2040DV

Abstract: ESM2 ESM2040D ke92 PTC6072 KE924503 m*11014 2SD644 SD6062 esm749a
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD Max (W) hFE Min »T Max (Hz) ICBO Max (A) tr Max (8) r (CE)ut Max (Ohms) T Op«r Package Style Max (°C) Darlington Transistors, NPN (Cont'd) 5 10 15 20 25 30 35 40 45 50

MFQ5460P

Abstract: 2N5460 DS46
Contextual Info: MFQ5460P o QUAD DUAL-IN-LINE P-CHANNEL JUNCTION FIELD-EFFECTTRANSISTORS . . . depletion mode Type A junction field-effect transistors signed for use in general-purpose amplifier applications. . de- High Gate-Source Breakdown Voltage — V(BR)GSS = 40 Vdc (Min)

f2c02 motorola

Abstract: f2c02 AN569 MMDF2C02E MMDF2C02ER2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF2C02E/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2C02E Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface

AN569

Abstract: MMDF4C03HD MMDF4C03HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF4C03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.

d2c03

Abstract: AN569 MMDF2C03HD MMDF2C03HDR2 SMD310 mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MMDF2C03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2C03HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs

AN569

Abstract: MMDF3C03HD MMDF3C03HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF3C03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF3C03HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process.

AN569

Abstract: D2C02 MMDF2C02HD MMDF2C02HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF2C02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2C02HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs