MOTOROLA MOSFET TO247 Search Results

AN569

Abstract: MTW20N50E
Contextual Info: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination

ad 156 transistor

Abstract: TMOS E-FET TMOS power FET MTW8N60E
Contextual Info: MOTOROLA Order this document by MTW8N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination

S 170 MOSFET TRANSISTOR

Abstract: TB-547 TO247 package
Contextual Info: MOTOROLA Order this document by MTW6N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW6N100E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1.5 OHM

AN569

Abstract: MTW24N40E TO247AE
Contextual Info: MOTOROLA Order this document by MTW24N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW24N40E Motorola Preferred Device TMOS POWER FET 24 AMPERES 400 VOLTS RDS on = 0.16 OHM

AN569

Abstract: MTW16N40E
Contextual Info: MOTOROLA Order this document by MTW16N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW16N40E Motorola Preferred Device TMOS POWER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM

AN569

Abstract: MTW8N60E DSA00109376 ad 153 transistor
Contextual Info: MOTOROLA Order this document by MTW8N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW8N60E Motorola Preferred Device TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS on = 0.55 OHM

mtw14n50

Contextual Info: MOTOROLA Order this document by MTW14N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW14N50E Motorola Preferred Device TMOS POWER FET 14 AMPERES 500 VOLTS RDS on = 0.40 OHM

AN569

Abstract: MTW45N10E mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTW45N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high

AN569

Abstract: MTW35N15E
Contextual Info: MOTOROLA Order this document by MTW35N15E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high

340K-01

Abstract: SIL-PAD 1000 TO 247 AN569 MTW32N20E
Contextual Info: MOTOROLA Order this document by MTW32N20E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW32N20E Motorola Preferred Device TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM

AN569

Abstract: MTW32N25E MTW32N25E motorola
Contextual Info: MOTOROLA Order this document by MTW32N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high

MTW7N80E

Contextual Info: MOTOROLA Order this document by MTW7N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW7N80E Motorola Preferred Device TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS on = 1.0 OHM

S 170 MOSFET TRANSISTOR

Abstract: MTW20N50E-D TO-247 Package
Contextual Info: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW20N50E Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.24 OHM

AN569

Abstract: MTW26N15E
Contextual Info: MOTOROLA Order this document by MTW26N15E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high

transistor 667 7A

Abstract: AN569 MTW10N100E
Contextual Info: MOTOROLA Order this document by MTW10N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW10N100E Motorola Preferred Device TMOS POWER FET 10 AMPERES 1000 VOLTS RDS on = 1.3 OHM

rifa pme 285 mb

Abstract: PME 285 MB RIFA rifa pme capacitor rifa pme 285 mb rifa pme 285 rifa pme 289 mb rifa pme 289 MA EON Q32B MC33035 SCR DC permanent magnet motor
Contextual Info: I AN1101 One-Horsepower Off-Line Brushless Permanent Magnet Motor Drive Ken Berringer Semiconductor Products Sector Discrete Applications Laboratory ruggedness allow the diode to withstand the high stresses im­ INTRODUCTION posed by forced commutation. Energy rated E-FETs are

TRANSISTOR BC 545

Abstract: amperes transistor BC 550 TRANSISTOR BC 530 transistor BC 338 transistor BC 2500 MOTOROLA N-Channel MOSFET AN569 MTW33N10E transistor Bc 287 MOTOROLA TRANSISTOR 726
Contextual Info: MOTOROLA Order this document by MTW33N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet EĆFET. Designer's TMOS MTW33N10E Power Field Effect Transistor Motorola Preferred Device TOĆ247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate

16N40E

Abstract: high power pulse generator with mosfet mosfet 16n 15
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TW 16N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POW ER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM N-Channel Enhancement-Mode Silicon Gate

527 MOSFET TRANSISTOR motorola

Abstract: Motorola Bipolar Power Transistor Data MBR28045 M0C8101 etd39 core type smps transformer design SMPS CIRCUIT DIAGRAM USING bipolar TRANSISTORS MC7815T SMPS CIRCUIT DIAGRAM USING TRANSISTORS 1200 volt 200 ampere MOSFET chopper transformer winding
Contextual Info: Order this document by AN1320/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1320 300 Watt, 100 kHz Converter Utilizes Economical Bipolar Planar Power Transistors Prepared by: Michaël Bairanzade Power Products Application Engineer Motorola Toulouse, France Edited By: Jack Takesuye

30N60

Abstract: 30N60 220 bt 109 transistor w30n60 Transistor motorola 418 gw 348
Contextual Info: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 30N 60 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced

20N60D

Contextual Info: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGW 20N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7

MTW10N40E

Abstract: RG-910 Motorola ON mosfet motorola tp 230
Contextual Info: MOTOROLA SC XSTRS/R F bflE D • h3b?ES4 DD'iaaaT 7ET ■ MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Advance Information MTW10N40E TMOS E-FET Power Field Effect Ttansistor Motorola Preferred Device N-Channel Enhancem ent-M ode S ilicon G ate This advanced T M O S E -FE T is designed to withstand high energy

Contextual Info: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM

MTW8N50E

Abstract: MOTOROLA N-Channel MOSFET motorola power FET
Contextual Info: MOTOROLA SC XSTRS/R F bflE D • b3b?SSH DG' I ßfi a? SSb ■ MOTb M OTOROLA ■i SEMICONDUCTOR TECHNICAL DATA Advance Information MTW8N50E TMOS E-FET Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancem ent-Mode Silicon G ate