MOTOROLA RF DEVICE Search Results

CA2820 TRW

Abstract: ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022
Contextual Info: Order this document by AN1022/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1022 MECHANICAL AND THERMAL CONSIDERATIONS IN USING RF LINEAR HYBRID AMPLIFIERS Prepared by: Don Feeney Motorola RF Devices ABSTRACT Motorola’s thin film hybrid amplifiers are medium power

HP RF TRANSISTOR GUIDE

Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Contextual Info: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS

mosfet ghz

Abstract: mrf182
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF182 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect TVansistors 30 W, 1.0 GHz, 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device

Motorola transistors MRF646

Abstract: 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860
Contextual Info: Selector Guide WIRELESS RF PRODUCT SELECTOR GUIDE SG46/D Rev. 25 9/2003 wireless Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Motorola serves both the wireless infrastructure and subscriber markets. Motorola RF Solutions is the leader in RF technology—today

vk200 rf choke

Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.

SU 179 transistor

Abstract: s227
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen­

rohm mtbf

Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

MRF156R

Abstract: MRF156 Arco 469 ceramic capacitor
Contextual Info: MOTOROLA Order this document by MRF156/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-Effect Transistors Motorola Preferred Device N–Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.

MRF860

Abstract: 2n2222 npn transistor 2N2222 rf
Contextual Info: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

transistor BD 135

Abstract: capacitor J336 EQUIVALENT OF K 2843 J336 TPV8200B transistor k 2843
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPV8200B The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­

mallory 170

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15090 The RF Line NPN Silicon RF Power TVansistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

MOTOROLA RF MODULE

Abstract: motorola amplifier
Contextual Info: Chapter Two Motorola RF General Purpose Linear Amplifier Module Data Sheets Device Number Page Number MHW1345 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA CATV DISTRIBUTION AMPLIFIER MODULE DEVICE DATA 2.1- 3 2.1-1

mhw916

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA b y M HW 916/D M HW 916 The RF Line UHF Silicon FET Power Amplifier Motorola Preferred Device 16 WATT 925-960 MHz RF POWER AMPLIFIER Designed specifically for the European Digital Extended Group Special

Contextual Info: MOTOROLA Order this document by MRF862/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF862 Motorola Preferred Device Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the

MRFG35010M

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

Contextual Info: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

F5003

Abstract: 1N4734
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

940 629 MOTOROLA

Abstract: HDR2X10 DB4140
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and

08055C103KAT

Contextual Info: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High

motorola sps transistor

Abstract: MRF21010
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet

MRFG35005MT1

Abstract: CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

db14g

Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

TO272

Abstract: 03B3 1206 cms diode 100B100JCA500X A113 MW4IC915GMBR1 MW4IC915MB MW4IC915MBR1 TAJE226M035R
Contextual Info: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High

1206 cms diode

Abstract: 08055C103KAT A113 MW4IC915GMBR1 MW4IC915MB MW4IC915MBR1 RF35 1206 cms
Contextual Info: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High