MOTOROLA SOT 23 PACKAGE MARKING Search Results

Contextual Info: MOTOROLA °rd6rNu“ *S Semiconductor Components M AX809 M AX810 SOT-23 PLASTIC PACKAGE TO-236 CASE 318 3-P in M icroprocessor Reset Monitors Features • Precision Vcc Monitor for 3.0V, 3.3V, and 5.0V Supplies • 140msec Guaranteed Minimum RESET, RESET

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silico n Tuning Diode M M B V432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package

MOTOROLA DIODE 250

Abstract: Diode Marking C3 dual diode marking c3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA S ilic o n Tuning D io d e MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package

zener t2d

Abstract: T2D zener T2D 8N lm 338 zener T2D 77 zener t2d 40 t2d diodes zener t2d 70 zener t2d 26 T2D 17 67
Contextual Info: motorola SC < D I O D E S / O P T O t,E D • t 3 b 7 2s s D D 8 S « 3 W M0T7 SECTION 4.2.4 DATA SHEETS ZENER VOLTAGE REGULATOR DIODES — continued Section 4.2.4.2 Surface Mounted SECTION 4.2.4.2.1 225 mW SOT-23 MULTIPLE PACKAGE QUANTITY MPQ) REQUIREMENTS

AE sot-23

Abstract: SOT-23 6F PO diode marking sot-23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 M6H MARKING sot23
Contextual Info: MOTOROLA Order this document by MMBD352LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

Contextual Info: MOTOROLA Order this document by MMBV609LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum

MMBV432

Contextual Info: MOTOROLA Order this document by MMBV432LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum

MMBTH81LT1

Abstract: MMBTH81L 3D marking sot23 sot-23 Marking 3D 3D sot23 diodes
Contextual Info: MOTOROLA Order this document by MMBTH81LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc

MMBFJ175LT1

Contextual Info: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max

BAS40LT1

Contextual Info: MOTOROLA Order this document by BAS40LT1/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAS40LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces

Contextual Info: MOTOROLA Order this document by MMBV105GLT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical

Contextual Info: Order this document by MC33464/D MC33464 Micropower Undervoltage Sensing Circuits The MC33464 series are micropower undervoltage sensing circuits that are specifically designed for use with battery powered microprocessor based systems, where extended battery life is required. A choice of several

BAS70LT1

Contextual Info: MOTOROLA Order this document by BAS70LT1/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAS70LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces

BSS64LT1

Contextual Info: MOTOROLA Order this document by BSS64LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistor BSS64LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage

MC33464

Abstract: a2cb motorola 4680 MC33464-D Voltage Detector SOT-89 marking MC33464 marking 121201 0k marking sot-89 1R SOT89
Contextual Info: Order this document by MC33464/D MC33464 Micropower Undervoltage Sensing Circuits The MC33464 series are micropower undervoltage sensing circuits that are specifically designed for use with battery powered microprocessor based systems, where extended battery life is required. A choice of several

BAS21LT1

Contextual Info: MOTOROLA Order this document by BAS21LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Switching Diode BAS21LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current

MMBTA55

Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
Contextual Info: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80

MMBTA55

Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
Contextual Info: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80

MMBFJ177LT1

Contextual Info: MOTOROLA Order this document by MMBFJ177LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc

marking 8b sot-23

Abstract: marking jv BAS116LT1 BAS116LT3
Contextual Info: MOTOROLA Order this document by BAS116LT1/D SEMICONDUCTOR TECHNICAL DATA BAS116LT1 Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel

marking JY sot-23

Abstract: BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor BAV199LT1 BAV199LT3
Contextual Info: MOTOROLA Order this document by BAV199LT1/D SEMICONDUCTOR TECHNICAL DATA BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times

m3j diodes

Abstract: MMBTH69LT1 MMBTH69
Contextual Info: MOTOROLA Order this document by MMBTH69LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH69LT1 COLLECTOR 3 PNP Silicon • Designed for UHF/VHF Amplifier Applications Motorola Preferred Device 1 BASE • High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA

MMBT404ALT1

Contextual Info: MOTOROLA Order this document by MMBT404ALT1/D SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MMBT404ALT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB Symbol

MMBFJ175LT1

Contextual Info: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max