marking code J111
Abstract: BC237 2N2904 bc547 marking transistor BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistor Surface Mount MSD602-RT1 Motorola Preferred Device COLLECTOR 3 3 2 2 BASE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage
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MSD602-RT1
IB218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
marking code J111
BC237
2N2904
bc547 marking transistor
BCY72
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2SC1943
Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2 Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
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MJE18004D2
MJE18004D2
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2SC1943
bd135 TRANSISTOR REPLACEMENT GUIDE
motorola transistor cross reference
TRANSISTOR 2sb546
transistor 2SA1046
BU108
TRANSISTOR REPLACEMENT GUIDE
c 3198 transistor
TIP142 TRANSISTOR REPLACEMENT
transistor Electronic ballast mje13007
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940 629 MOTOROLA 113
Abstract: Nippon capacitors
Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
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MRF158/D
MRF158
940 629 MOTOROLA 113
Nippon capacitors
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731 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts
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MRF158
MRF158
731 motorola
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940 629 MOTOROLA 220
Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
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MRF158/D
MRF158
940 629 MOTOROLA 220
MOTOROLA POWER 726 MOS FET TRANSISTOR
MRF158
VK200
20WATTS
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AN569
Abstract: MTW32N25E MTW32N25E motorola
Text: MOTOROLA Order this document by MTW32N25E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high
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MTW32N25E/D
O-247
AN569
MTW32N25E
MTW32N25E motorola
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2n3055 motorola
Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,
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1PHX11122C
2n3055 motorola
tip122 tip127 audio amp schematic
transistor equivalent book 2sc2238
IR640
transistor motorola 40411
TRANSISTOR REPLACEMENT GUIDE
ir431
motorola AN485
C2688
2SA1046
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BC517 spice model
Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information
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VN2410L
BC517 spice model
bc547 spice model
bc548 spice model
h1 m6c
MPS6595
bc557 Spice Model
BF245 A spice
spice model bf199
BC640 SPICE model
transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
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m33 tf 130
Abstract: BF113 is373 GRS-003 GRS003 Mje 1533 1803e 203FF 1115 R1B H645
Text: Order this document by AN1400/D AN1400 Application Note MC10/100H640 Clock Driver Family I/O SPICE Modelling Kit Prepared by Todd Pearson Debbie Beckwith ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect
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AN1400/D
AN1400
MC10/100H640
MC10H600
MC10H640,
MC10/100H64
m33 tf 130
BF113
is373
GRS-003
GRS003
Mje 1533
1803e
203FF
1115 R1B
H645
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MM706
Abstract: 40ZA
Text: MOTOROLA SC XSTRS/R 4bE F D b3b?2S4 OOTMflSfl MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2 .5 W - 4 7 0 M H Z - 7 .5 V HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR N PN S IL IC O N . . . designed for 5.0 to 10 Volt U H F large-signal amplifier applications
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T-33-05
MM706
40ZA
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTW32N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole M TW 32N 25E Motorola Preferred Device TM OS POWER FET 32 AMPERES 250 VOLTS
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MTW32N25E/D
340K-01
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 5 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -6 0 0 M H z frequency range.
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MRF5175
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MRF5175 transistor
Abstract: MRF5175 transistor 2sc 546
Text: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver
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MRF5175
28-Volt,
400-M
T-33-05
MRF5175 transistor
MRF5175
transistor 2sc 546
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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sm 41056
Abstract: 32N25E TIC 136 Transistor 25C312
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW32N25E TMOS E-FET ' Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate
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motorola 371-03
Abstract: mrf754
Text: MOTOROLA SC XSTRS/R F 4bE D b3b?2S4 OOTMf l bS MOTOROLA 3 HriOTb T - 3 Z > '0 5 SEM IC O N D U C T O R TECHNICAL DATA MRF754 T h e R F L in e 8.0 W - 470 M Hz - 7 .5 V HIG H FREQ UENCY T R A N S IS TO R NPN SILICON HIGH FREQUENCY TRANSISTOR N P N S IL IC O N
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MRF754
motorola 371-03
mrf754
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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MRF5174
Abstract: IR 21025
Text: 4bE D M O T O R O L A SC X S T R S / R F b3b?2S4 OOISQM? 5 IMOTfe MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 2 W —400 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 260*600 MHz frequency range.
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28-Volt.
400-MHz
MRF5174
IR 21025
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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Untitled
Abstract: No abstract text available
Text: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM
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cr122
340F-03
O-247)
O-251)
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MOTOROLA POWER TRANSISTOR lc 945
Abstract: zener ap 474 940 629 MOTOROLA 113
Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.
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RF158/D
MOTOROLA POWER TRANSISTOR lc 945
zener ap 474
940 629 MOTOROLA 113
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MRF162
Abstract: motorola TE 901 Triode rs 733 P011t
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF162 The RF MOSFET Line 15 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER d e s ig n e d fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r a p p lic a
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MRF162
MRF162,
MRF162
AN-215A
motorola TE 901
Triode rs 733
P011t
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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motorola transistor 2N2907A
Abstract: a201 ic transistor av 29 transistor
Text: Semiconductor, Inc. TC57 Series LINEAR REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application
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FZT749
OT23-5
OT-23A
TC57-01
motorola transistor 2N2907A
a201 ic transistor
av 29 transistor
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