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    MOTOROLA TRANSISTOR 726 Search Results

    MOTOROLA TRANSISTOR 726 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA TRANSISTOR 726 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MM706

    Abstract: 40ZA
    Contextual Info: MOTOROLA SC XSTRS/R 4bE F D b3b?2S4 OOTMflSfl MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2 .5 W - 4 7 0 M H Z - 7 .5 V HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR N PN S IL IC O N . . . designed for 5.0 to 10 Volt U H F large-signal amplifier applications


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    T-33-05 MM706 40ZA PDF

    marking code J111

    Abstract: BC237 2N2904 bc547 marking transistor BCY72
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistor Surface Mount MSD602-RT1 Motorola Preferred Device COLLECTOR 3 3 2 2 BASE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage


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    MSD602-RT1 IB218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 marking code J111 BC237 2N2904 bc547 marking transistor BCY72 PDF

    Contextual Info: MOTOROLA Order this document by MTW32N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole M TW 32N 25E Motorola Preferred Device TM OS POWER FET 32 AMPERES 250 VOLTS


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    MTW32N25E/D 340K-01 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 5 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -6 0 0 M H z frequency range.


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    MRF5175 PDF

    2SC1943

    Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


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    MJE18004D2 MJE18004D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SC1943 bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007 PDF

    MRF5175 transistor

    Abstract: MRF5175 transistor 2sc 546
    Contextual Info: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver


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    MRF5175 28-Volt, 400-M T-33-05 MRF5175 transistor MRF5175 transistor 2sc 546 PDF

    940 629 MOTOROLA 113

    Abstract: Nippon capacitors
    Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance


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    MRF158/D MRF158 940 629 MOTOROLA 113 Nippon capacitors PDF

    731 motorola

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts


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    MRF158 MRF158 731 motorola PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    940 629 MOTOROLA 220

    Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
    Contextual Info: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance


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    MRF158/D MRF158 940 629 MOTOROLA 220 MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS PDF

    sm 41056

    Abstract: 32N25E TIC 136 Transistor 25C312
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW32N25E TMOS E-FET ' Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate


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    PDF

    motorola 371-03

    Abstract: mrf754
    Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?2S4 OOTMf l bS MOTOROLA 3 HriOTb T - 3 Z > '0 5 SEM IC O N D U C T O R TECHNICAL DATA MRF754 T h e R F L in e 8.0 W - 470 M Hz - 7 .5 V HIG H FREQ UENCY T R A N S IS TO R NPN SILICON HIGH FREQUENCY TRANSISTOR N P N S IL IC O N


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    MRF754 motorola 371-03 mrf754 PDF

    AN569

    Abstract: MTW32N25E MTW32N25E motorola
    Contextual Info: MOTOROLA Order this document by MTW32N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high


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    MTW32N25E/D O-247 AN569 MTW32N25E MTW32N25E motorola PDF

    MRF5174

    Abstract: IR 21025
    Contextual Info: 4bE D M O T O R O L A SC X S T R S / R F b3b?2S4 OOISQM? 5 IMOTfe MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 2 W —400 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 260*600 MHz frequency range.


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    28-Volt. 400-MHz MRF5174 IR 21025 PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    PDF

    Contextual Info: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM


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    cr122 340F-03 O-247) O-251) PDF

    MOTOROLA POWER TRANSISTOR lc 945

    Abstract: zener ap 474 940 629 MOTOROLA 113
    Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.


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    RF158/D MOTOROLA POWER TRANSISTOR lc 945 zener ap 474 940 629 MOTOROLA 113 PDF

    MRF162

    Abstract: motorola TE 901 Triode rs 733 P011t
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF162 The RF MOSFET Line 15 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER d e s ig n e d fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r a p p lic a ­


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    MRF162 MRF162, MRF162 AN-215A motorola TE 901 Triode rs 733 P011t PDF

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


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    1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 PDF

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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    PDF

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


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    VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S PDF

    motorola transistor 2N2907A

    Abstract: a201 ic transistor av 29 transistor
    Contextual Info: Semiconductor, Inc. TC57 Series LINEAR REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application


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    FZT749 OT23-5 OT-23A TC57-01 motorola transistor 2N2907A a201 ic transistor av 29 transistor PDF

    m33 tf 130

    Abstract: BF113 is373 GRS-003 GRS003 Mje 1533 1803e 203FF 1115 R1B H645
    Contextual Info: Order this document by AN1400/D AN1400 Application Note MC10/100H640 Clock Driver Family I/O SPICE Modelling Kit Prepared by Todd Pearson Debbie Beckwith ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect


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    AN1400/D AN1400 MC10/100H640 MC10H600 MC10H640, MC10/100H64 m33 tf 130 BF113 is373 GRS-003 GRS003 Mje 1533 1803e 203FF 1115 R1B H645 PDF