MP3A Search Results

mf2a1575

Abstract: MF3A2140S60FCA 2170-2200MHz mf2a1575f04bca MF2A1575F mf3a25 MF2A1
Contextual Info: Chequers Electronic China Limited Dielectric Filter (MC/MF/MP Mono Type) ● Dimension and Typical Characteristics w w MF1950 w I/O I/O ● Electrical Characteristics Part Number Center Frequency fo (MHz) MP3A1656S20FCA 1656.0 MP3A1650S30FCA 1650.0 Insertion

Contextual Info: FS10ASJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1408-0200 Previous: MEJ02G0061-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 0.19 Ω ID : 10 A Integrated Fast Recovery Diode (TYP.) : 95 ns

car mp3 remote

Abstract: AT83SND2MP3 0011B 7524B AT83SND2CDVX AT83SND2CMP3 CRC16 FAT32 emmc pin mp3 player schematic diagram
Contextual Info: Features • MPEG I/II-Layer 3 Hardwired Decoder • • • • • • • • • • – Stand-alone MP3 Decoder – 48, 44.1, 32, 24, 22.05, 16 kHz Sampling Frequency – Separated Digital Volume Control on Left and Right Channels Software Control using 31 Steps

voice activated switch project

Abstract: keypad calculator 378H eSL256 eSL032 embedded micro speech recognition
Contextual Info: eSL/eAM Series +eSLZ000 INTEGRATED DEVELOPMENT ENVIRONMENT USER’S GUIDE DOC. VERSION 2.2 (Applicable to eSL/eAM IDE Version 1.0 & later) ELAN MICROELECTRONICS CORP. Apr 2009 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM

PRSS0004ZA-A

Contextual Info: FX3ASJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1436-0200 Previous: MEJ02G0286-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : – 150 V rDS(ON) (max) : 1.2 Ω ID : – 3 A Integrated Fast Recovery Diode (TYP.) : 80 ns

FX30ASJ-03

Abstract: PRSS0004ZA-A KA DIODE
Contextual Info: FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G1445-0200 Previous: MEJ02G0266-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : –30 V rDS(ON) (max) : 61 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 50 ns

d1878

Abstract: 2SK4081 2SK4081-S15-AY 2SK4081-ZK-E1-AY 2SK4081-ZK-E2-AY
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2611D

Abstract: 130381 harris 381
Contextual Info: h S E MaI H I-381 thru H1-390 r N DrU C iT s C O O R M M M M « M M M M M M CMOS Analog Switches August 1997 Features Description • • • • The HI-381 thru HI-390 series of switches are monolithic de­ vices fabricated using CMOS technology and the Harris dielec­

D1806

Abstract: 2SK3113B 2SK3113B-S15-AY 2SK3113B-ZK-E2-AY transistor types full 2SK3113B-ZK-E1-AY MP 6102
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

relay 12vdc

Abstract: eagle signal control HD32A622 BR15A601 relay 6vdc 30D3CA12002 BR18A601 30E3CD02402 BR15A6 dynapar ht50 DA211A6
Contextual Info: 2005 Factory Automation & Feedback Controls Price List North America, Latin America & Asia Pacific Effective July 2, 2005 Revised 11/7/2005 Supersedes all previous issues • COUNTERS • TIMERS • PANEL METERS • TACHOMETERS and Other Devices Veeder-Root TM brand

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

CRD5AS-12B

Contextual Info: Preliminary Datasheet CRD5AS-12B R07DS0503EJ0100 Rev.1.00 Jul 07, 2011 Reverse Conducting Thyristor Medium Power Use Features •     Built-in reverse conducting diode  Planar Type IT AV : 5 A VDRM : 600 V IGT: 100 A The Product guaranteed maximum junction

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RJK5031DPD

Contextual Info: Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching R07DS0417EJ0200 Rev.2.00 Feb 24, 2012 Features • Low on-state resistance RDS on = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline

D-465

Abstract: HI1-0381-2 HI1-0381-5 HI2-0381-2 HI2-0381-5 HI-381 HI-387 HI-390 MN5B
Contextual Info: HI-381 thru HI-390 S E M I C O N D U C T O R CMOS Analog Switches December 1993 Features • • • • • • • • Description Analog Signal Range ±15V Supplies ±15V Low Leakage 40pA Low On Resistance 35Ω Break-Before-Make Delay 60ns Charge Injection 30pC

atmel 8051 microcontroller with built in ADC

Abstract: 8051 mp3 player circuit diagram AT89C51SND1C Atmel 8051 Instruction set Architecture emmc memory THX 201 AT80C51SND1C AT83SND1C AT83SND1C-RO AT89C51SND1C-RO
Contextual Info: Features • MPEG I/II-Layer 3 Hardwired Decoder • • • • • • • • • • • • • • • • • • • • • – Stand-alone MP3 Decoder – 48, 44.1, 32, 24, 22.05, 16 kHz Sampling Frequency – Separated Digital Volume Control on Left and Right Channels Software Control

RJK6032DPD

Contextual Info: Preliminary Datasheet RJK6032DPD 600V - 3A - MOS FET High Speed Power Switching R07DS0837EJ0200 Rev.2.00 Aug 06, 2012 Features • Low on-resistance RDS on = 3.3  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting

smd diode mark E14

Abstract: HI1-0303R5254 HI303
Contextual Info: HI-303 Data Sheet November 17, 2004 FN3125.10 Dual, SPDT CMOS Analog Switch Features The HI-303 switch is a monolithic device fabricated using CMOS technology and the Intersil dielectric isolation process. This switch features break-before-make switching,

FS5AS-06

Abstract: PRSS0004ZG-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PRSS0004ZG-A

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: FX6ASJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G1439-0300 Rev.3.00 Dec 19, 2008 Features • • • • • Drive voltage : 4 V VDSS : – 150 V rDS ON (max) : 0.53 Ω ID : – 6 A Integrated Fast Recovery Diode (TYP.) : 100 ns Outline RENESAS Package code: PRSS0004ZG-A

Contextual Info: FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G1445-0300 Rev.3.00 Dec 19, 2008 Features • • • • • Drive voltage : 4 V VDSS : –30 V rDS ON (max) : 61 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZG-A

rg82855pm

Abstract: RG82855PM 855PM SL752 subwoofer preamp diagram SL752 Intel RG82855pm wistron BC547 audio WISTRON power sequence Intel 855PM Odem ICH4-M B220LFA
Contextual Info: Mobil CPU Banias uFCPGA CRT TV OUT 16 CARDBUS & 1394 TI 4510 ATI M10-CSP64 LVDS LCD 12 VGA 16 dual channel 31 LAN L4:VCC L5:Signal 2 L6:GND L7:Signal 3 L8:Component ATA 66/100 left side ICH4-M RTL 8101L PRIMARY IDE 3/5V DC/DC TXFM 17,18,19 USB2.0 PORT*3

HI1-0303-2

Abstract: HI1-0303-5 HI1-0307-5 HI-301 HI-303 HI-307 HI9P0301-5 HI9P0303-5 HI9P0303-9 MN2A
Contextual Info: HI-301 thru HI-307 TM Data Sheet March 2000 File Number 3125.4 CMOS Analog Switches Features The HI-301 thru HI-307 series of switches are monolithic devices fabricated using CMOS technology and the Intersil dielectric isolation process. These switches feature break