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    MPS2907A EQUIVALENT Search Results

    MPS2907A EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    MPS2907A EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mps2907 replacement

    Abstract: BC237 motorola 2n4033 Transistor 2N3019
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MPS2907 MPS2907A* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol MPS2907 MPS2907A Unit Collector – Emitter Voltage VCEO –40 –60 Vdc


    Original     		PDF MPS2907 MPS2907A* MPS2907 MPS2907A 226AA) Therma218A MSC1621T1 MSC2404 MSD1819A MV1620 mps2907 replacement BC237 motorola 2n4033 Transistor 2N3019

    MPS2907A

    Abstract: EQUIVALENT MPS2907A MMBT2907A MPS2907A EQUIVALENT
    Text: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.


    Original     		PDF MPS2907A O-226AA OT-23 MMBT2907A. 20K/box 18-Jul-08 MPS2907A EQUIVALENT MPS2907A MMBT2907A MPS2907A EQUIVALENT

    MPS2907A EQUIVALENT

    Abstract: EQUIVALENT MPS2907A MMBT2907A MPS2907A
    Text: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.


    Original     		PDF MPS2907A O-226AA OT-23 MMBT2907A. 20K/box 150mA, 10-May-02 200ns MPS2907A EQUIVALENT EQUIVALENT MPS2907A MMBT2907A MPS2907A

    Untitled

    Abstract: No abstract text available
    Text: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.


    Original     		PDF MPS2907A O-226AA OT-23 MMBT2907A. 20K/box 20K/box 08-Apr-05

    EQUIVALENT MPS2907A

    Abstract: MPS2907A EQUIVALENT MMBT2907A MPS2907A
    Text: PRELIMINARY PRELIMINARY PRELIMINARY MPS2907A SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also


    Original     		PDF MPS2907A OT-23 MMBT2907A. 200ns EQUIVALENT MPS2907A MPS2907A EQUIVALENT MMBT2907A MPS2907A

    MPS2907A EQUIVALENT

    Abstract: MPS2907A
    Text: MPS2907A Small Signal Transistor PNP TO-226AA (TO-92) New 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ct u d Pro Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • On special request, this transistor is also


    Original     		PDF MPS2907A O-226AA OT-23 MMBT2907A. 200ns MPS2907A EQUIVALENT MPS2907A

    MPS2907A EQUIVALENT

    Abstract: EQUIVALENT MPS2907A
    Text: NEW PRODUCT NEW PRODUCT MPS2907A SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also


    Original     		PDF MPS2907A OT-23 MMBT2907A. Collector-Emitt15 200ns MPS2907A EQUIVALENT EQUIVALENT MPS2907A

    2n1613 equivalent

    Abstract: BC237 diode l 0607
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection


    Original     		PDF SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original     		PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


    Original     		PDF MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    BC237

    Abstract: 2n2904 2n2905
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage VCEO –60 –80 Vdc


    Original     		PDF MPSW55 MPSW56* MPSW55 MPSW56 226AE) Ther218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 2n2904 2n2905

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352WT1 MMBD352WT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    MPS2907A EQUIVALENT

    Abstract: EQUIVALENT MPS2907A MPS2222
    Text: TOSHIBA MPS2907A Transistor Silicon PNP Epitaxial Type For High-Speed Switching Use DC To VHF Amplifier Features • High DC Current Gain Specified - -0.1 - -500mA • High Transition Frequency - @ lc = -50mA, fT = 200MHz Min. • Low Coiiector-Emitter Saturation Voltage


    OCR Scan     		PDF MPS2907A -500mA -50mA, 200MHz -500mA, MPS2222 100kHz 100kHz 150PPB MPS2907A EQUIVALENT EQUIVALENT MPS2907A MPS2222

    Untitled

    Abstract: No abstract text available
    Text: NEW PRO DUCT NEW PRO DUCT MPS2907A SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.181 (4.6) 0 .1 4 2 (3.6) 1 ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also manufactured in the pin configuration


    OCR Scan     		PDF MPS2907A OT-23 MMBT2907A.

    MPS2907A EQUIVALENT

    Abstract: No abstract text available
    Text: SAM SU NG SEMI CON DUCTOR INC IME D MPS2907A | T^IMS 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRA N SISTO R • Collector-Emltter Voltage: V « o = 6 0 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF MPS2907A T-29-21 PS2907 MPS2907A EQUIVALENT

    transistor NEC D 882 p

    Abstract: B5G1 045H5 marking BSs sot-23 nec d 882 p nec d 882 p datasheet TL 188 TRANSISTOR PIN DIAGRAM transistor NEC D 882 p 6V transistor tl 187 LP2980
    Text: LP2980 National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixecf-output voltage regulator de­ signed specifically to meet the requirements of battery-pow­ ered applications.


    OCR Scan     		PDF LP2980 LP2980 OT-23 O-220 TL/H/12078-54 bS011S4 transistor NEC D 882 p B5G1 045H5 marking BSs sot-23 nec d 882 p nec d 882 p datasheet TL 188 TRANSISTOR PIN DIAGRAM transistor NEC D 882 p 6V transistor tl 187

    LP2980-5

    Abstract: 045H5 1E475ZY5U-C304 L01A LP29801 LP29801m5 LA 7123 L01B SIEMENS capacitor tantalum GG67
    Text: LP2980 National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator de­ signed specifically to meet the requirements of battery-pow­ ered applications.


    OCR Scan     		PDF LP2980 LP2980 OT-23 T0-220 bS01122 LP2980-5 045H5 1E475ZY5U-C304 L01A LP29801 LP29801m5 LA 7123 L01B SIEMENS capacitor tantalum GG67

    MPS2222A

    Abstract: No abstract text available
    Text: 3 TOSHIBA TRANSISTOR . MPS2222A SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO 5i1 MAX VHF FREQUENCY APPLICATION. FEATURES: . DC Current Gain Specified : 0.1~500mA . Low Collector-Emitter Saturation Voltage


    OCR Scan     		PDF MPS2222A 500mA 300MHz MPS2907A. 150mA, 500mA, MPS2222A