MPS2907A EQUIVALENT Search Results

mps2907 replacement

Abstract: BC237 motorola 2n4033 Transistor 2N3019
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MPS2907 MPS2907A* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol MPS2907 MPS2907A Unit Collector – Emitter Voltage VCEO –40 –60 Vdc

MPS2907A

Abstract: EQUIVALENT MPS2907A MMBT2907A MPS2907A EQUIVALENT
Contextual Info: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.

MPS2907A EQUIVALENT

Abstract: EQUIVALENT MPS2907A MMBT2907A MPS2907A
Contextual Info: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.

Contextual Info: MPS2907A Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.

MPS2907A EQUIVALENT

Abstract: EQUIVALENT MPS2907A MPS2222
Contextual Info: TOSHIBA MPS2907A Transistor Silicon PNP Epitaxial Type For High-Speed Switching Use DC To VHF Amplifier Features • High DC Current Gain Specified - -0.1 - -500mA • High Transition Frequency - @ lc = -50mA, fT = 200MHz Min. • Low Coiiector-Emitter Saturation Voltage

EQUIVALENT MPS2907A

Abstract: MPS2907A EQUIVALENT MMBT2907A MPS2907A
Contextual Info: PRELIMINARY PRELIMINARY PRELIMINARY MPS2907A SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also

MPS2907A EQUIVALENT

Abstract: MPS2907A
Contextual Info: MPS2907A Small Signal Transistor PNP TO-226AA (TO-92) New 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ct u d Pro Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • On special request, this transistor is also

MPS2907A EQUIVALENT

Abstract: EQUIVALENT MPS2907A
Contextual Info: NEW PRODUCT NEW PRODUCT MPS2907A SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also

Contextual Info: NEW PRO DUCT NEW PRO DUCT MPS2907A SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.181 (4.6) 0 .1 4 2 (3.6) 1 ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ On special request, this transistor is also manufactured in the pin configuration

MPS2907A EQUIVALENT

Contextual Info: SAM SU NG SEMI CON DUCTOR INC IME D MPS2907A | T^IMS 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRA N SISTO R • Collector-Emltter Voltage: V « o = 6 0 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2n1613 equivalent

Abstract: BC237 diode l 0607
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection

transistor NEC D 882 p

Abstract: B5G1 045H5 marking BSs sot-23 nec d 882 p nec d 882 p datasheet TL 188 TRANSISTOR PIN DIAGRAM transistor NEC D 882 p 6V transistor tl 187 LP2980
Contextual Info: LP2980 National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixecf-output voltage regulator de­ signed specifically to meet the requirements of battery-pow­ ered applications.

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

LP2980-5

Abstract: 045H5 1E475ZY5U-C304 L01A LP29801 LP29801m5 LA 7123 L01B SIEMENS capacitor tantalum GG67
Contextual Info: LP2980 National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator de­ signed specifically to meet the requirements of battery-pow­ ered applications.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.

2n2222 h 331 transistors

Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

MPS2222A

Contextual Info: 3 TOSHIBA TRANSISTOR . MPS2222A SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO 5i1 MAX VHF FREQUENCY APPLICATION. FEATURES: . DC Current Gain Specified : 0.1~500mA . Low Collector-Emitter Saturation Voltage

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Abstract: 2n2904 2n2905
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage VCEO –60 –80 Vdc

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts