MPS3404 Search Results

t3d 18

Contextual Info: SPRAGUE/SENICOND 8 5 1 4 0 1 9 SP RA GU E! GROUP T3 D • ÖS13ÖS0 S E M I C O N D S / ICS GQ03Sb4 4 ■ 93D 03 56 4D BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain 'cBO 100 100 2000

2n2846

Abstract: 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola 2C2222A MPS8092 2N4401 die 2n3116
Contextual Info: 34 M O T O R O L A SC -CDIODES/OPTO} 1 D • t,3fc,7S55 0 0 3 7 ^ 7 4 34C 37974 7"-3r- /S SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A — DIE NO. NPN LINE SOURCE — DMB101 This die provides performance similar to that of the following device types:

MPS2712C

Abstract: MPS2714C MPS2716C THC6222 THC6224 THC6426 THC6427 THC6428 THC6429 THC6714
Contextual Info: ALLEGRO 8514019 MICROSYSTEMS SPRAGUE. INC T3 0SG433Ô D SEMIC ONDS/ ICS 93D GGG35b4 3 • AL6R 0 3 5643> BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain •cBO 100 100 500 500 100 100

2N2540

Abstract: 2N2846 2n5219 MPSD05 2N1959 2n3299
Contextual Info: 34 MOTOROLA SC -CDIODES/OPTO} D 1 L3fc,7355 □□37T74 34C 37974 7 " - 3 r - /$• SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A DIE NO. — LINE SOURCE — DMB101 i npn This die provides performance similar to that of the following device types:

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: AL L E G R O M I C R O S Y S T E M S INC 8514019 SPRAGUE. T3 D • 0SGM33Ô OGOBS^Ü S E M I C O N D S / ICS 4 ■ ALGR 93D 0359.0 D r-a7-ft? _' PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

transitron

Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216

BSY44

Abstract: 2SC634A SA2720 2n3404 2SC503 2S0220 2SC109A 2N2193 LOW-POWER SILICON NPN 2SC486
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216

MPS3565

Contextual Info: SPRAGUE/SEMICOND GROUP 13 85 14 019 SPRAGUE. D • ÖS1 3 ÖS0 0 0 0 3 5 1 0 S E M I C OND S/ IC S S ■ 93D 03590 D T '1 1 -^ 0 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO O O -« .