MPS3563 Search Results

MPS3709

Abstract: MPS3563 MPS3646 MPS3693 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO (V) Min V CEO V ESO (V) Min (V) Min Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) PD *c (W) (A) @Tc=25°c 'cBO ^CB (mA) 0 (V ) Max MPS3563 30 12 2 0.625 0.05 0.05 MPS3646

Contextual Info: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector −Emitter Voltage VCEO 15 12 Vdc Collector −Base Voltage VCBO 30 30 Vdc Emitter −Base Voltage

MPS3563

Abstract: MPS918
Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (9731 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA MPS918* MPS3563 Amplifier TVansistors NPN Silicon MAXIMUM RATINGS Symbol MPS918 MPS3563 Unit Collector-Emitter Voltage VCEO 15 12 Vdc Collector-Base Voltage

MPS3563

Abstract: mps918
Contextual Info: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon •Motorola Preferred Device COLLECTOR 3 2 BASE" 1 EMITTER MAXIMUM RATINGS Symbol MPS918 MPS3563 Unit Col lector-E m itter Voltage Rating VCEO 15 12 Vdc C ollector-B ase Voltage

MPS3563

Abstract: MPS918
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon 'Motorola Preferred Device MAXIMUM RATINGS Rating Unit Symbol MPS918 MPS3563 12 Vdc 30 Vdc v CEO 15 C ollector-Base Voltage VCBO 30 E m itter-B ase Voltage vebo 3.0 C ollector-Em itter Voltage

MPS918

Abstract: MPS918 equivalent MPS3563
Contextual Info: MOTOROLA Order this document MPS918/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage

PN3563

Contextual Info: FAIRCHILD SEM ICO ND UCT OR fl4 D E | B 4 b T b 7 4 0057414 4 | 3469674 FAIRCHILD SEMICONDUCTOR » e 84D 274 14 D m PN918/MPS918/FTS0918 PN3563/MPS3563/FTS03563 m A Schlum berger Com pany NPN Small Signal High Frequency Am plifiers & Oscillators . 15 dB Min @ 200 MHz (PN/FTS0918)

MPS3563

Abstract: MPS3646 MPS3693 MPS3694 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3709
Contextual Info: TO-92 Plastic Package Transistore NPN Maximum Ratings Type No. ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd 'c (W) (A) 0Tc=25“( 'cBO ^C 8 'ces ^C E (UA) (V> (UA) Max Max MPS3563 30 12 2

MPS918 equivalent

Abstract: BC237 MPS3563 transistor MPS3563
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage VCEO 15 12 Vdc Collector – Base Voltage

Contextual Info: MOT OROL A SC MPS3563 XSTRS/R F 1EE 0 | b3b?ZS4 □ Oflfe.Gfc.'i 0 | For Specifications, See MPS918 Data M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage vCEO 30 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage Rating Unit v EBO 5.0

MPS3563

Contextual Info: MPS918* MPS3563 M AXIM U M RATINGS Symbol Rating M PS918 M PS3563 Unit Collector-Em itter V oltage v CEO 15 12 V dc C ollector-Base V oltage v CBO 30 30 V dc Em itter-Base V oltage v EBO 3.0 2.0 Vdc Collector Current — C o n tin u o u s 'c 50 m Adc Total Device D issip a tio n a Ty\ = 25<’C

Contextual Info: MPS918, MPS3563 MPS918 is a Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Rating Collector −Emitter Voltage Value VCEO MPS918 MPS3563 Collector −Base Voltage

MPS3568

Abstract: MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C
Contextual Info: B IPO LA R TRANSISTOR CHIPS NPN Transistors ‘M P S ’ Device ly p e s ELECTRICAL CHARACTERISTICS al T* - 25°C OC C ur«t Gain '«0 Device Type MPS3405C MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C MPS3S69C MPS3642C MPS3646C

MPS918

Abstract: MPS918 equivalent 3810 to equivalent ic MPS3563 IC 2910
Contextual Info: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage

MPS3563

Abstract: lt 2904
Contextual Info: MPS918* MPS3563 MAXIMUM RATINGS Rating 2 Symbol MPS918 MPS3563 Unit C o lle c to r-E m itte r V o lt a g e VCEO 15 12 Vdc C o lle c to r -B a se V o lt a g e VCBO 30 30 Vdc E m itte r-B a se V o lt a g e v EBO 3.0 2.0 Vdc C o lle c to r C u rre n t — C o n t in u o u s

mps918

Abstract: MPS3563 MPS3663 MPS-3563
Contextual Info: MPS918 SILICON MPS3563 NPN SILICON ANNULAR TRANSISTORS NPN SILICON . . . designed fo r V H F/U H F low-level am plifier, and oscillator applications. A M PLIFIER TRANSISTORS • One-Piece, Injection-Molded Plastic Unibloc R eliability • Low C ollector-Em itter Saturation Voltage VcE(sat) = 0-4 Vdc (Maxi @ I q = 10 mAdc

MPS918

Contextual Info: ON Semiconductort MPS918* MPS3563 Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPS918 MPS3563 Unit Collector–Emitter Voltage VCEO 15 12 Vdc Collector–Base Voltage VCBO 30 30 Vdc Emitter–Base Voltage

MPS3563

Contextual Info: MOTOROLA Order this document MPS918/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage

TO226AA

Abstract: 226AA msc2295 P2N2222A MPS3904
Contextual Info: Bipolar Transistors RF Transistors NPN PNP V BR CEO IC mA Max Min hFE Max fT MHz Min Cap pF Max CRB = 0.65 CRE = 0.65 MPSH10 − 25 − 60 − 650 BF959 − 20 100 40 − 600 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 − − − − 15 15 12 12 − 50 50 50

MPS6511

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO V CEO V EBO (V) (V) (V) PD (W) *c (A) Min Min Min Tc=25°( MPS3563 30 12 2 0.625 0.05 0.05 MPS3646 40 15 5 0.625 0.3 MPS3693

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty