MPSA 12 Search Results

transistor mpsa 42

Abstract: transistor mpsa 42 npn transistor mpsa 92 transistor mpsa 42 Data mpsa 42 transistor a 92 AmpsA42 transistor mpsa 18
Contextual Info: MPSA 42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended.

transistor mpsa 42

Abstract: transistor mpsa 250 transistor mpsa 93 transistor mpsa 92 transistor mpsa 13 MPSA92 transistor mpsa 42 npn mpsa MPSA 92 mpsa 42
Contextual Info: MPSA 92 / 93 PNP Silicon Expitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MPSA 42 and MPSA 43 are recommended.

MPSA13

Abstract: MPSA14 TO92-CBE
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS E MPSA 13 MPSA 14 TO-92 CBE BC ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCES 30 Collector -Emitter Voltage VCBO

MPSA42

Abstract: MPSA43
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS E MPSA 42 MPSA 43 TO-92 CBE BC High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified DESCRIPTION

Contextual Info: Transys Electronics L I M I T E D NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS E MPSA 13 MPSA 14 TO-92 BC ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCES 30 Collector -Emitter Voltage VCBO 30 Collector -Base Voltage VEBO 10 Emitter -Base Voltage IC

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON TRANSISTORS MPSA 42 MPSA 43 TO-92 CBE High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified

MPSA05

Abstract: MPS-A05 mpsa06 1C10
Contextual Info: ¡ TOSHIBA SILICON NPN EPITAXIAL TYPE PCT PROCESS M P Q ñ ílR MPSAÜ5, 06 Unit in mm DESIGNED FOR USE AS MEDIUM-POVER DRIVER AND r LOV-POVER OUTPUTS. 5 i l MAX. . • FEATURES : •High Collector-Eiitter Breakdown Voltage

MPSA44

Abstract: utc mpsa 44
Contextual Info: UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MPSA44 VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation: Pc(max)=625mW 1 APPLICATION *Telephone switching

Contextual Info: UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MPSA44 VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation: Pc(max)=625mW 1 APPLICATION *Telephone switching

mpsa45 transistor

Abstract: MPSA44
Contextual Info: UTC MPSA 44/ 45 TRANSISTOR NPN EPITAXIAL SILICON HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MPSA44 VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation: Pc(max)=625mW 1 APPLICATION *Telephone switching

Contextual Info: UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MPSA44 VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation: Pc(max)=625mW 1 APPLICATION *Telephone switching

mpsa45

Contextual Info: UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MPSA44 VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation: Pc(max)=625mW 1 APPLICATION *Telephone switching

MPSA11

Abstract: MPSA10 100MHZ
Contextual Info: MPSA 10 / 11 NPN Silicon Epitaxial Planar Transistor VHF / UHF TRANSISTOR. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package

MPSA11

Abstract: 100MHZ MPSA10
Contextual Info: MPSA 10 / 11 NPN Silicon Epitaxial Planar Transistor VHF / UHF TRANSISTOR. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package

Contextual Info: UTC MPSA 44B NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V *Collector current up to 300mA *Complement to MPSA94 *Collector Dissipation: Pc max =625mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR *Pb-free plating product number: MPSA44BL

Contextual Info: S A M S U N G SEMICONDUCTOR INC MPSA 06 IME D 7 ^ * 4 1 4 2 QDG73MS 3 | NPN EPITAXIAL SILICON TRANSISTOR ' ' T-29^21 AMPLIFIER TRANSISTOR • Collector-Hmltter Voltage: V c e o = 8 0 V • Collector Dissipation: Pc (max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)

to92c

Abstract: MPSA 506 transistor transistor bf 422 NPN smpsa42 bc 617 transistor equivalent to92d BC368N BF 414 BB 112 BC338N
Contextual Info: Selection Guide For complete information and data sheets please contact us on our internet homepage Leaded Components Varactor Diodes leaded Type Characteristics (TA = 25 °C) Maximum Ratings VR IF CT

62H01

Abstract: MPBS-62H01 4P2T switch E08L-0 MPSA-22E08-0 4p2t touch switch pushbutton 6P2T transistor mpsa 42 MPBS-22H01
Contextual Info: Miniature Pushbutton Switches Specifications: Contact rating: Contact resistance: Insulation resistance: Dielectric strength: Timing: Travel: AC: 0.5A / 100 V AC: 0.2A / 250 V DC: < 1A / 25 V < 6 mΩ > 100 MΩ at 500 V DC 500 V AC, 50 Hz for the duration of 1 minute

FET BFW 43

Abstract: MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257
Contextual Info: 4.2+« 4.2+* I OOOOO C MC MC MC MC M O O O 1O C Mt—i— 1 C M Oo C MC M - I I I I CMC MC MC MC M C MID ID 1 C M OO C MC M lO ID ID LOLD C MC MC M*- t-* o' ò o’ O* O 1 LOLOLOLO C MC MC MC M o d O* O 0> «—C Mr- C MC M - Ul O> > IO o o o o CO»—« —*—

mpsa16

Abstract: MPS-A16 MPS-A17
Contextual Info: MPS-Al 6 SILICON MPS-Al 7 NPN SILICON ANNULAR TRANSISTORS NPN SILICON CHOPPER TRANSISTORS . . . designed fo r use in m oderate speed switching and clipping applica­ tions that require large in p u t voltage capability. • High-Em itter-Base Breakdown V oltage —

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1