MPSH81 MODEL Search Results

mpsh81 model

Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

mpsh81 model

Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

nk90

Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

DELTA fan bfb

Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

CLC411

Abstract: CLC411A8B CLC411AJE CLC411AJP CLC411AMC if amplifier 5mhz CLC411A
Contextual Info: N CLC411 High-Speed Video Op Amp with Disable General Description Features The CLC411 combines a state-of-the-art complementary bipolar process with National’s patented current-feedback architecture to provide a very high-speed op amp operating from ±15V supplies.

CLC411

Abstract: CLC411A8B CLC411AJE CLC411AJP CLC411AMC mpsh81 model MPSH10 small amplifier CLC411A
Contextual Info: N CLC411 High-Speed Video Op Amp with Disable General Description Features The CLC411 combines a state-of-the-art complementary bipolar process with National’s patented current-feedback architecture to provide a very high-speed op amp operating from ±15V supplies.

tantalum Capacitor cs13

Abstract: CS13 tantalum hp2835 diode 2N5583 hp2835 OPA600CM 2N5943 CS13 capacitor MPS-H81 OPA600
Contextual Info: OPA600 Fast-Settling Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● FAST SETTLING: 80ns to ±0.1% 100ns to ±0.01% ● FULL DIFFERENTIAL FET INPUT ● –25°C to +85°C AND –55°C to +125°C TEMPERATURE RANGES ● ±10V OUTPUT: 200mA ● GAIN BANDWIDTH PRODUCT: 5GHz

10K linear potentiometer

Abstract: HP2835 c1 CS13 OPA600 OPA600BM OPA600CM OPA600SM OPA600TM
Contextual Info: OPA600 Fast-Settling Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● FAST SETTLING: 80ns to ±0.1% 100ns to ±0.01% ● FULL DIFFERENTIAL FET INPUT ● –25°C to +85°C AND –55°C to +125°C TEMPERATURE RANGES ● ±10V OUTPUT: 200mA ● GAIN BANDWIDTH PRODUCT: 5GHz

AN532A

Abstract: AN-532A mc6882 mc68194f
Contextual Info: MC68194 Carrier Band Modem CBM The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase–coherent carrier band Local Area Network (LAN) connection. The CBM performs the Physical Layer

AD9661

Abstract: AD9660 20-PIN AD9560 AD9661A AD9661AKR AD9661AKR-REEL MPSH81 OP191 schematics of laser printers
Contextual Info: a Laser Diode Driver with Light Power Control AD9661A and fall times are 2 ns to complement printer applications that use image enhancing techniques such as pulse width modulation to achieve gray scale and resolution enhancement. Control signals are TTL/CMOS compatible.

PULSED LASER DIODE DRIVER

Abstract: Centronics connector dimension Laser Diode 10 pin PDF PIN PHOTO DIODE DESCRIPTION Centronics connector current rating AD9560 Centronics drivers computer power supply schematic circuit diagram diode all schematics of laser printers
Contextual Info: a Laser Diode Driver with Light Power Control AD9661A and fall times are 2 ns to complement printer applications that use image enhancing techniques such as pulse width modulation to achieve gray scale and resolution enhancement. Control signals are TTL/CMOS compatible.

n type laser diode

Abstract: AD9560
Contextual Info: a Laser Diode Driver with Light Power Control AD9661A and fall times are 2 ns to complement printer applications that use image enhancing techniques such as pulse width modulation to achieve gray scale and resolution enhancement. Control signals are TTL/CMOS compatible.

MC68824

Abstract: AN532A AN535 MC68000 MC68194 MC68194FJ MC68194FJR2 MPSH81 CVCM
Contextual Info: MC68194 Carrier Band Modem CBM The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase–coherent carrier band Local Area Network (LAN) connection. The CBM performs the Physical Layer

mc68194f

Abstract: capacitor charge indicator 55050A
Contextual Info: MC68194 Carrier Band Modem CBM The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase−coherent carrier band Local Area Network (LAN) connection. The CBM performs the Physical Layer

MC68824

Abstract: AN532A working of reactance modulator AN-532A AN535 DL122 MC68000 MC68194 MPS2369 MPSH81
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Carrier Band Modem CBM MC68194 The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase–coherent carrier band Local Area Network (LAN) connection. The CBM

BF547A

Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Contextual Info: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.