mpsh81 model
Abstract: No abstract text available
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
mpsh81 model
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MARKING W3 SOT23 TRANSISTOR
Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
MARKING W3 SOT23 TRANSISTOR
rf transistor mark code H1
transistor marking code ne SOT-23
marking code w2 sot23
pnp rf transistor
sot23 Transistor marking p2
sot-23 Marking 3D
marking 3d sot-23
Marking code mps
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mpsh81 model
Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
mpsh81 model
MMBTH81
CBVK741B019
F63TNR
PN2222N
NE-21
BF-133
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Untitled
Abstract: No abstract text available
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
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nk90
Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
nk90
mje321
BF-133
CBVK741B019
F63TNR
MMBTH81
PN2222N
pnp rf transistor
Bf133
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DELTA fan bfb
Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage
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MPSH81
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
DELTA fan bfb
BC237
TRANSISTOR REPLACEMENT FOR 2N3053
BC547 REPLACE
t1 bc140
BC108 motorola
2n2222 sot323
MOTOROLA LOT MARKINGS
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CLC411
Abstract: CLC411A8B CLC411AJE CLC411AJP CLC411AMC if amplifier 5mhz CLC411A
Text: N CLC411 High-Speed Video Op Amp with Disable General Description Features The CLC411 combines a state-of-the-art complementary bipolar process with National’s patented current-feedback architecture to provide a very high-speed op amp operating from ±15V supplies.
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CLC411
CLC411
200MHz
CLC411A8B
CLC411AJE
CLC411AJP
CLC411AMC
if amplifier 5mhz
CLC411A
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CLC411
Abstract: CLC411A8B CLC411AJE CLC411AJP CLC411AMC mpsh81 model MPSH10 small amplifier CLC411A
Text: N CLC411 High-Speed Video Op Amp with Disable General Description Features The CLC411 combines a state-of-the-art complementary bipolar process with National’s patented current-feedback architecture to provide a very high-speed op amp operating from ±15V supplies.
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CLC411
CLC411
200MHz
CLC411A8B
CLC411AJE
CLC411AJP
CLC411AMC
mpsh81 model
MPSH10 small amplifier
CLC411A
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tantalum Capacitor cs13
Abstract: CS13 tantalum hp2835 diode 2N5583 hp2835 OPA600CM 2N5943 CS13 capacitor MPS-H81 OPA600
Text: OPA600 Fast-Settling Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● FAST SETTLING: 80ns to ±0.1% 100ns to ±0.01% ● FULL DIFFERENTIAL FET INPUT ● –25°C to +85°C AND –55°C to +125°C TEMPERATURE RANGES ● ±10V OUTPUT: 200mA ● GAIN BANDWIDTH PRODUCT: 5GHz
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OPA600
100ns
200mA
OPA600
15VDC
100ns.
IN4148
tantalum Capacitor cs13
CS13 tantalum
hp2835 diode
2N5583
hp2835
OPA600CM
2N5943
CS13 capacitor
MPS-H81
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10K linear potentiometer
Abstract: HP2835 c1 CS13 OPA600 OPA600BM OPA600CM OPA600SM OPA600TM
Text: OPA600 Fast-Settling Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● FAST SETTLING: 80ns to ±0.1% 100ns to ±0.01% ● FULL DIFFERENTIAL FET INPUT ● –25°C to +85°C AND –55°C to +125°C TEMPERATURE RANGES ● ±10V OUTPUT: 200mA ● GAIN BANDWIDTH PRODUCT: 5GHz
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OPA600
100ns
200mA
OPA600
15VDC
100ns.
IN4148
10K linear potentiometer
HP2835 c1
CS13
OPA600BM
OPA600CM
OPA600SM
OPA600TM
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AN532A
Abstract: AN-532A mc6882 mc68194f
Text: MC68194 Carrier Band Modem CBM The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase–coherent carrier band Local Area Network (LAN) connection. The CBM performs the Physical Layer
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MC68194
MC68824
AN532A
AN-532A
mc6882
mc68194f
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AD9661
Abstract: AD9660 20-PIN AD9560 AD9661A AD9661AKR AD9661AKR-REEL MPSH81 OP191 schematics of laser printers
Text: a Laser Diode Driver with Light Power Control AD9661A and fall times are 2 ns to complement printer applications that use image enhancing techniques such as pulse width modulation to achieve gray scale and resolution enhancement. Control signals are TTL/CMOS compatible.
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AD9661A
AD9661A
20-PIN
28-Pin
C2079
AD9661
AD9660
AD9560
AD9661AKR
AD9661AKR-REEL
MPSH81
OP191
schematics of laser printers
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PULSED LASER DIODE DRIVER
Abstract: Centronics connector dimension Laser Diode 10 pin PDF PIN PHOTO DIODE DESCRIPTION Centronics connector current rating AD9560 Centronics drivers computer power supply schematic circuit diagram diode all schematics of laser printers
Text: a Laser Diode Driver with Light Power Control AD9661A and fall times are 2 ns to complement printer applications that use image enhancing techniques such as pulse width modulation to achieve gray scale and resolution enhancement. Control signals are TTL/CMOS compatible.
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AD9661A
AD9661A
20-PIN
28-Pin
C2079
PULSED LASER DIODE DRIVER
Centronics connector dimension
Laser Diode 10 pin
PDF PIN PHOTO DIODE DESCRIPTION
Centronics connector current rating
AD9560
Centronics drivers
computer power supply schematic circuit diagram
diode all
schematics of laser printers
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n type laser diode
Abstract: AD9560
Text: a Laser Diode Driver with Light Power Control AD9661A and fall times are 2 ns to complement printer applications that use image enhancing techniques such as pulse width modulation to achieve gray scale and resolution enhancement. Control signals are TTL/CMOS compatible.
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AD9661A
AD9661A
20-PIN
28-Pin
C2079
n type laser diode
AD9560
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MC68824
Abstract: AN532A AN535 MC68000 MC68194 MC68194FJ MC68194FJR2 MPSH81 CVCM
Text: MC68194 Carrier Band Modem CBM The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase–coherent carrier band Local Area Network (LAN) connection. The CBM performs the Physical Layer
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MC68194
MC68194
MC68824
r14525
MC68194/D
AN532A
AN535
MC68000
MC68194FJ
MC68194FJR2
MPSH81
CVCM
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mc68194f
Abstract: capacitor charge indicator 55050A
Text: MC68194 Carrier Band Modem CBM The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase−coherent carrier band Local Area Network (LAN) connection. The CBM performs the Physical Layer
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MC68194
MC68824
MC68194/D
mc68194f
capacitor charge indicator
55050A
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MC68824
Abstract: AN532A working of reactance modulator AN-532A AN535 DL122 MC68000 MC68194 MPS2369 MPSH81
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Carrier Band Modem CBM MC68194 The bipolar LSI MC68194 Carrier Band Modem (CBM) when combined with the MC68824 Token Bus Controller provides an IEEE 802.4 single channel, phase–coherent carrier band Local Area Network (LAN) connection. The CBM
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MC68194
MC68194
MC68824
DL122
MC68194/D*
MC68194/D
AN532A
working of reactance modulator
AN-532A
AN535
MC68000
MPS2369
MPSH81
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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OCR Scan
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PDF
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LCD01
BF547A
transistor bf 175
BFG65 equivalent
BF547B
BFG25AXD
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