MR2M Search Results
MR2M Price and Stock
Murrelektronik GmbH MURE-5MR-2MCIRC CBL 5POS RCPT TO PLUG 6.56' |
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MURE-5MR-2M | Bag | 20 | 1 |
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MURE-5MR-2M | 20 |
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MURE-5MR-2M | Bulk | 15 Weeks | 1 |
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Murrelektronik GmbH MURC-4MR-2MMINI (7/8) 4 POLE, RECEPTACLE, M |
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MURC-4MR-2M | Bag | 10 | 1 |
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MURC-4MR-2M | 20 |
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MURC-4MR-2M | Bulk | 15 Weeks | 1 |
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Murrelektronik GmbH MURE-3MR-2MMINI (7/8) 3 POLE, RECEPTACLE, M |
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MURE-3MR-2M | Bag | 10 | 1 |
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MURE-3MR-2M | 20 |
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MURE-3MR-2M | Bulk | 15 Weeks | 1 |
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Innodisk Corporation EV2U-RMR2-MMC1-C1USB2.0 FIXED FOCUS CAMERA MODULE |
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EV2U-RMR2-MMC1-C1 | Bulk | 1 | 1 |
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TT electronics / BI Technologies 82MR2MEGLFTRIMMER 2M OHM 0.5W PC PIN TOP |
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82MR2MEGLF | Bulk | 1,600 |
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82MR2MEGLF | 1,600 |
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MR2M Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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00A75
Abstract: INTEL Core i7 860 J 80222 lm 6358 J1 3009-2 271121 Texture mapping CC1105 Intel i860
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i860TM 32/64-BIT 64-Bit 128-Bit 32-Bit CG/SALE/101789 00A75 INTEL Core i7 860 J 80222 lm 6358 J1 3009-2 271121 Texture mapping CC1105 Intel i860 | |
3108
Abstract: dvp&r Sync generator rgb TPU 27* teletext 50hz notch filter ic 50hz sine oscillator BUS CONTROLLED VERTICAL DEFLECTION SYSTEM CCU3000 composite to rgb converter ic "SLDC"
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6251-352-3AI 3108 dvp&r Sync generator rgb TPU 27* teletext 50hz notch filter ic 50hz sine oscillator BUS CONTROLLED VERTICAL DEFLECTION SYSTEM CCU3000 composite to rgb converter ic "SLDC" | |
Contextual Info: M65KC512AB 512Mbit 4 Banks x 4M x 32 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Preliminary Data Features summary • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 4MWords, each 32 bits wide ■ Supply Voltage – VDD = 1.7 to 1.9V (1.8V typical in |
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M65KC512AB 512Mbit 133MHz 512Mbit 133MHz | |
Contextual Info: M65KA128AL 128Mbit 4 Banks x 2M x 16 1.8V Supply, Low Power SDRAMs PRELIMINARY DATA Features summary • 128Mbit SYNCHRONOUS DYNAMIC RAM – Organized as 4 Banks of 2 MWords, each 16 bits wide ■ SUPPLY VOLTAGE – VDD = 1.65V to 1.95V – VDDQ = 1.65 to 1.95V for Input/Output |
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M65KA128AL 128Mbit 128Mbit 104MHz | |
Contextual Info: M65KG512AB 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR Low Power SDRAM Features • 512Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 8MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 332Mbit/s max. for 6ns speed |
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M65KG512AB 512Mbit 512Mbit 332Mbit/s 133MHz 166MHz | |
NEC 10F P64 TRANSISTOR
Abstract: 3130Y vdp-3130y transistor L 945 PAL60 2124-V AUTOMATIC BEAM CURRENT LIMITER CIRCUITS VDP3130Y 3132Y CORDIC to generate sine wave
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6251-519-1AI 313xY NEC 10F P64 TRANSISTOR 3130Y vdp-3130y transistor L 945 PAL60 2124-V AUTOMATIC BEAM CURRENT LIMITER CIRCUITS VDP3130Y 3132Y CORDIC to generate sine wave | |
micronas ddp 3310B transistor
Abstract: EHT COIL micronas ddp 3310b h16a 3310b electron gun CRT vcr 14d 39 ok AUTOMATIC BEAM CURRENT LIMITER CIRCUITS black white TV EHT COIL cr35 transistor
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6251-464-1AI 3310B micronas ddp 3310B transistor EHT COIL micronas ddp 3310b h16a 3310b electron gun CRT vcr 14d 39 ok AUTOMATIC BEAM CURRENT LIMITER CIRCUITS black white TV EHT COIL cr35 transistor | |
3116B
Abstract: 3104B vdp 3120b VDP3116B VDP3112B digital sine wave generator RGB test generator equivalent transistor H1D DSA003793 H12F DC
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6251-437-2PD 31xxB 3116B 3104B vdp 3120b VDP3116B VDP3112B digital sine wave generator RGB test generator equivalent transistor H1D DSA003793 H12F DC | |
3579545 crystal oscillator kss 7bContextual Info: VDP 31xxB PRELIMINARY DATA SHEET Contents Page Section Title 5 6 1. 1.1. Introduction VDP Applications 7 7 7 7 7 7 7 7 7 9 10 10 11 11 11 11 11 2. 2.1. 2.1.1. 2.1.2. 2.1.3. 2.1.4. 2.1.5. 2.1.6. 2.1.7. 2.2. 2.3. 2.3.1. 2.3.2. 2.3.3. 2.3.4. 2.3.5. 2.3.6. Functional Description |
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31xxB 3579545 crystal oscillator kss 7b | |
M65KA512ABContextual Info: M65KA512AB 512Mbit 4 Banks x 8M x 16 , 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM Features • 512 Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8 Mwords, each 16 bits wide ■ Supply voltage – VDD = 1.7 to 1.9 V (1.8 V typical in |
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M65KA512AB 512Mbit M65KA512AB | |
M65KA128AEContextual Info: M65KA128AE 128Mbit 4 Banks x 2M x 16 1.8 V Supply, Low Power SDRAM Features summary • 128Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2MWords, each 16 bits wide ■ Synchronous Burst Read and Write – Fixed Burst Lengths: 1, 2, 4, 8 Words or |
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M65KA128AE 128Mbit 128Mbit 133MHz M65KA128AE | |
Contextual Info: M65KA256AF 256Mbit 4 Banks x 4M x 16 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Features • 256Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 4MWords, each 16 bits wide ■ Supply Voltage – VDD = 1.7 to 1.95V (1.8V typical in |
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M65KA256AF 256Mbit 133MHz 256Mbit | |
Contextual Info: M65KA512AB 512Mbit 4 Banks x 8M x 16 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Feature summary • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8MWords, each 16 bits wide ■ Supply voltage – VDD = 1.7 to 1.9V (1.8V typical in |
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M65KA512AB 512Mbit 133MHz 512Mbit 133MHz | |
Contextual Info: M65KG256AF 256Mbit 4 Banks x 4M x 16 1.8 V Supply, 133MHz, DDR Low Power SDRAM Preliminary Data Feature summary • 256Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 4MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/clock cycle |
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M65KG256AF 256Mbit 133MHz, 256Mbit 266Mbit/s 133MHz M65KG256AF8W6T M65KG256AF | |
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intel i860
Abstract: A80860XR-40 pbit 2180 a80860xr-33 A80860XR40 TE 2197 transistor 8550 sad intel I860 processor pin diagram of XR 2206 i860 64-Bit Microprocessor Performance Brief
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64-BIT 128-Bit 32-Bit 32/64-Bit intel i860 A80860XR-40 pbit 2180 a80860xr-33 A80860XR40 TE 2197 transistor 8550 sad intel I860 processor pin diagram of XR 2206 i860 64-Bit Microprocessor Performance Brief | |
micronas vct 49 x 3f
Abstract: micronas vct 49 MICRONAS VCT TELEVISION EHT 2070 lot 2070 eht arabic dot matrix driver vct 3834a c4 3832A c20m 08 3831a
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6251-518-1PD 38xxA/B micronas vct 49 x 3f micronas vct 49 MICRONAS VCT TELEVISION EHT 2070 lot 2070 eht arabic dot matrix driver vct 3834a c4 3832A c20m 08 3831a | |
Contextual Info: M65KG512AA 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR low power SDRAM Features • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8 Mwords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 266 Mbit/s (max) |
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M65KG512AA 512Mbit 512Mbit | |
itt ol 170Contextual Info: Edition May 15, 1997 6251-437-1PD ITT INTERMETALL 4bflE711 0 0 0 b S 7 b 234 VDP 31xxB PRELIMINARY DATA SHEET Contents Page Section Title 5 6 1. 1.1. Introduction VDP Applications 9 10 10 11 11 11 11 11 11 12 12 13 13 13 14 15 15 15 16 17 17 17 17 18 18 18 |
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6251-437-1PD 4bflE711 31xxB itt ol 170 | |
micronas ddp 3310B transistor
Abstract: h16a H14d H1D4 h16d east west correction
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3310B 6251-464-1AI 3310B micronas ddp 3310B transistor h16a H14d H1D4 h16d east west correction | |
micronas vct 49 x 3f
Abstract: vct 3834a c4 micronas vct 49 MICRONAS VCT 38xxB-D6 1F52 Micronas i2c vct philips uv 617 modulator 3833A 301f07
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38xxA/B 6251-518-1PD 38xxA/B micronas vct 49 x 3f vct 3834a c4 micronas vct 49 MICRONAS VCT 38xxB-D6 1F52 Micronas i2c vct philips uv 617 modulator 3833A 301f07 | |
EHT COIL
Abstract: 16F NEC AUTOMATIC BEAM CURRENT LIMITER CIRCUITS electron gun CRT 3315C EHT COIL crt anode current DDP3315C ITU-R709 capacitor 1C9 TRANSISTOR BC 187
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6251-521-1AI 3315C EHT COIL 16F NEC AUTOMATIC BEAM CURRENT LIMITER CIRCUITS electron gun CRT 3315C EHT COIL crt anode current DDP3315C ITU-R709 capacitor 1C9 TRANSISTOR BC 187 | |
M65KA128ALContextual Info: M65KA128AL 128Mbit 4 Banks x 2M x 16 1.8V Supply, Low Power SDRAMs Feature summary • 128Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2 MWords, each 16 bits wide ■ Supply Voltage – VDD = 1.65V to 1.95V – VDDQ = 1.65 to 1.95V for Input/Output |
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M65KA128AL 128Mbit 128Mbit 104MHz M65KA128AL | |
micronas vct 49
Abstract: MICRONAS VCT 3834A lot 2070 eht 150db tv booster circuit diagram 24 pin rgb 8x8 Dot Matrix Display 3050s osd font arabic dot matrix driver 3832A
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6251-518-1AI 38xxA micronas vct 49 MICRONAS VCT 3834A lot 2070 eht 150db tv booster circuit diagram 24 pin rgb 8x8 Dot Matrix Display 3050s osd font arabic dot matrix driver 3832A | |
M65KG512ABContextual Info: M65KG512AB 512Mbit 4 banks x 8 Mb x 16 1.8 V supply, DDR low power SDRAM Features • 512Mbit Synchronous Dynamic RAM – Organized as 4 banks of 8 Mwords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 332 Mbit/s max. for 6ns speed |
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M65KG512AB 512Mbit 512Mbit M65KG512AB |