MRA TRANSISTOR Search Results

MP3006

Contextual Info: SILICON PNP EPITAXIAL TYPE_ DARLINGTON POWER TRANSISTOR 3 IN 1 MP3006 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mra HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 2 0 .2 ± 0.2 . Small Package by Full Molding.

2sk405 2sj115

Abstract: 2SK405 2SJ115 2SJ115/2SK405
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK405 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mra 0 3 . 'Z ± O . Z FEATURES: . High Breakdown Voltage VDSS=1&0V . High Forward Transfoer Admittance |Yfs]=2.0S Typ. . Complementary to 2SJ115

MRA transistor

Contextual Info: 0610-09 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 0610-09 is Designed for Class C, Common Base Applications in the 600 MHz to 1000 MHz Frequency Range. FEATURES INCLUDE: • Gold Metalization • Input Matching • Emitter Ballasting PACKAGE STYLE MRA .25

Contextual Info: JU MRA1 DIE P-Channel Enhancement-Mode MOS Transistors in c o r p o r a te d MRA1CHP* 3N163 3N164 "Meets or exceeds specification for all part numbers listed below For additional design information please consult the typical performance curves MRA. DESIGNED FOR:

Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T T E S D OOlbßMG O f * D 'T S R - il 99D 16840 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 3 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOS I) INDUSTRIAL APPLICATIONS Unit in mra

M705

Contextual Info: ñ m-mra.• m Ê C F U S & IU l m m mm w * w w w» » mm 140 C om m erce Drive Montgomeryviüe, PA 18936-1013 Tel: 215 631-9840 O U 1 D t)U RF & MICROWAVE TRANSISTORS TACAN APPLICATIONS DESIGNED FOR USE IN TACAN SYSTEMS EXTREMELY RUGGED THERMALLY STABLE.

MRA - MFE823

Abstract: MFE823
Contextual Info: SILICONIX INC lflE D Ô5S473S O G m O H T MFE823 7 • CX'Sificonix incorporated 'T -Z l-X 'B P-Channel Enhancem ent-M ode M OS Transistor PRODUCT SUMMARY PART NUMBER V BR DSS (V) (m S) ■d (mA) PACKAGE -2 5 1 -3 0 TO-18 9(3 BOTTOM VIEW TO-18 MFE823 Performance Curves: MRA (See Section 7)

Contextual Info: jre s ft 3N163 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY B O T T O M VIEW TO -7 2 TO-206AF PART NUM BER V (BR|DSS 3N163 -40 250 -50 3N164 -30 300 -50 "W 1 • d (A) 1 2 3 4 Performance Curves: MRA DRAIN G ATE SUBSTR ATE, C A S E SO URCE

relay asr 033

Abstract: Diode smd f6 ic SMD MARKING CODE ad 5.9 MR 31 relay P-DSO-20-12 TLE5200 smd diode MARKING F6 TVR 471 capacitor Zener diode smd marking code gw UZP-5
Contextual Info: ABS System IC 1 Overview 1.1 Features • • • • • • • • • TLE 6210 TLE 6211 5 V, 800 mA linear regulator Undervoltage/overvoltage reset Undervoltage and overvoltage logout Digital watchdog supervision for 2 Microcontrollers motor relay driver

GPS05791

Abstract: P-DSO-20-12 TVR 431
Contextual Info: ABS System IC 1 Overview 1.1 Features • • • • • • • • • TLE 6210 TLE 6211 5 V, 800 mA linear regulator Undervoltage/overvoltage reset Undervoltage and overvoltage logout Digital watchdog supervision for 2 Microcontrollers motor relay driver

MRA0610-18A

Abstract: MRA transistor
Contextual Info: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.

MRA0610-40A

Abstract: IC 555 datasheet of ic 555 RF NPN POWER TRANSISTOR 2.5 GHZ MRA0610-18A MRA transistor
Contextual Info: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-40A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.

d 1877 transistor

Abstract: MRA transistor
Contextual Info: PRELIMINARY 0610-40 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 0610-40 is a Common B, Class C, Device Designed for Broadband Applications in the 600 MHz to 1.0 GHz Spectrum. FEATURES INCLUDE: • Internal Matching Emitter Ballasting • Gold Metalization

Contextual Info: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications from 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.

BCWD

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RAL2023-18 M RAL2023-18H The RF Line M ic ro w a v e P o w er Transistors . . . desig n ed p rim a rily fo r w id e b a n d , large-signat o u tp u t and d riv e r a m p lifie r stages in the 2 to 2.3 GHz fre q u en cy range.

Contextual Info: TOSHIBA {DI SC RE TE /OPT O} 9097250 TOSHIBA DISCRETE/OPTO $ufubn 0^ 1 ^ 0^ 7 55 0 0 0 1 b ñ 3 L Ti 99D 16836 DT-S^-l TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 3 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (7T-MOS I) INDUSTRIAL APPLICATIONS

siliconix 3n163

Contextual Info: Tem ic 3N163/164_ siiicûnix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V br DSS Min (V) v GS(th) r DS(on) M ax (a) Ì d (òh) M in (mA) CrsS Max »ON Typ (V) (pF) (ns) 3N163 -4 0 - 2 to - 5 250 -5 0.7

Contextual Info: Tem ic 3N163/3N164 S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min VGS(th) (V) r DS(on) Max (V) (Q) IiKon) Min (mA) C-rss Max (pF) toN Typ (ns) 3N163 -40 - 2 to -5 250 -5 0.7 18 3N164 -30 -2 to -5

MRA transistor

Abstract: MRA1600-2 MRA1600 581 transistor motorola Motorola 581 motorola 803 transistor MOTOROLA 813 transistor motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRA1600/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor MRA1600-2 Designed primarily for large–signal output and driver amplifier stages for mobile satellite up links. • Designed for Class C, Common Base Power Amplifiers

3N164

Abstract: 3N163
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18

3N163

Abstract: 3N164
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18

3N163

Abstract: 3N164
Contextual Info: 3N163/164 Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 -40 -2 to -5 250 -5 0.7 18 3N164 -30 -2 to -5 300 -3 0.7 18 Features

ultra low igss pA

Abstract: electrometer ultra low igss High Conductance Low Leakage Diode To-206AF 3N163 3N164
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18 Features

82c386

Abstract: 82C836 82C836B intel 80387sx LIM EMS 4.0 8088 motherboard schematics 82c710 Chips and Technologies microchannel timing 92H-System SCATsx
Contextual Info: 82C836 CHIPSet Single-Chip 386sx AT Data Sheet March 1993 P R E L I M I N A R Y  Copyright Notice Software Copyright  1993, Chips and Technologies, Inc. Manual Copyright  1993, Chips and Technologies, Inc. All Rights Reserved. Printed in U.S.A. Trademark Acknowledgment