MRA10 Search Results

FERRITE TOROID

Abstract: motorola 2n2222 2N2222 TIP41 TIP41 amplifier 10 35L C5 2N2222 motorola
Contextual Info: MOTOROLA Order this document by MRA1000–3.5L/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers

Contextual Info: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA MRA1000-14L The RF Line UHF Power Transistor 8 dB TO 1000 MHz 14 WATTS BROADBAND UHF POWER TRANSISTOR . . . designed p rim a rily fo r w id e b an d , larg e -sig n a l o u tp u t and d riv e r a m p lifie r stages to

Contextual Info: MRA1014-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.5m @V(CBO) (V) (Test Condition)28

Contextual Info: !j£Ti£u <^£mi-Condu.d:oi ^Products., t/ C/ The RF Line UHF Power Transistor MRA10OO-7L . . designed primarily for wideband, large-signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics:

Contextual Info: MOTOROLA Order this document by MRA1000–14L/D SEMICONDUCTOR TECHNICAL DATA UHF Power Transistor MRA1000-14L . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers

MRA1014-35

Abstract: MRA1014
Contextual Info: MRA1014-35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .320 SQ 2L FLG The ASI MRA1014-35 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 1.0 GHz to 1.4 GHz. C B FEATURES: • Diffused Ballast Resistors.

BALLAST MOTOROLA

Abstract: MRA1000-14L 380SOE
Contextual Info: MOTOROLA Order this document by MRA1000–14L/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-14L . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers

Contextual Info: MRA1014-6H Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)50â I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MOTOROLA 813 transistor

Contextual Info: MOTOROLA Order this document by MRA1000–7L/D SEMICONDUCTOR TECHNICAL DATA UHF Power Transistor MRA1000-7L . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Pow er Transistor MRA1000-7L . . . designed primarily for wideband, large-signal output and driver amplifier stages to 1000 MHz. » Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics:

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Pow er Transistor MRA1000-7L . . designed primarily for wideband, large-signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics:

B108B

Abstract: 1014-35 1014-12 equivalent MRA1014
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA1014 Series The RF Line M ic ro w a v e P o w er Transistors . . . d e s ig n e d p r im a r ily fo r w id e b a n d , la rg e -s ig n a l o u tp u t a n d d r iv e r a m p lifie r s ta g e s in th e 1 to 1.4 G Hz fre q u e n c y ra n g e .

BALLAST MOTOROLA

Abstract: MRA1000-7L 145D-02
Contextual Info: MOTOROLA Order this document by MRA1000–7L/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-7L . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRA1000-7L The RF Line UHF P o w er T ran sisto r . , . designed prim arily for wideband, large-signal output and driver am plifier stages to 1000 MHz. 9 dB TO 1000 M Hz 7 WATTS BROADBAND UHF POWER TRANSISTOR • Designed for Class A Linear Power Amplifiers

TH 2190 Transistor

Abstract: 10 35L C5
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, large-signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics:

m28748

Abstract: m28748 winchester Winchester Electronics mre MRE 34 MRE 41 H winchester electronics litton 50H8 42S-G mre-7s-g 34H-8
Contextual Info: Rack & Panel MRE Series Miniature Rectangular / #20 Contacts / .040" Dia. / 7.5 Amps Receptacle MRE 14S-G Plug MRE 14P-G Hood MRE 14H MRE Series plugs and receptacles are the accepted standard for rectangular-shaped, miniature, internal-type connectors. They

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

MRA-1225R00JE12

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . WIREWOUND RESISTORS Ideal for Audio and Medical Imaging Equipment MR A Non-Magnetic, Non-Inductive, Axial-Leaded, Wirewound Resistors Key Benefits • Non-magnetic and all welded constructions greatly enhance frequency response.

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

ra-100

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RA1000-3.5L The RF Line UHF P o w er T ran sistor 10 dB TO 1000 M H z 3.5 WATTS BROADBAND UHF POWER TRANSISTOR . . . designed p rim a rily fo r w id e b an d , large-signal o u tp u t and d riv e r a m p lifie r stages to

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability