MRF MOSFET Search Results

4134 mosfet

Abstract: mrf 861 transistor mrf 610 PE4134 RF POWER MOSFET
Contextual Info: PRODUCT SPECIFICATION PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive

mrf 861

Abstract: ETC1-1-13 PE4135 RF POWER MOSFET
Contextual Info: PRODUCT SPECIFICATION PE4135 High Linearity Quad MOSFET Mixer for GSM800 & Cellular BTS Product Description The PE4135 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad

Contextual Info: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up

4134 mosfet

Abstract: MRF MOSFET 70-0087 PE4134 RF POWER MOSFET ETK4-2T
Contextual Info: Product Specification PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to

MRF MOSFET

Abstract: 858C ETC1-1-13 PE4135 PE4135-EK
Contextual Info: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up

Contextual Info: Product Specification PE4135 High Linearity UltraCMOS Quad MOSFET Mixer Product Description The PE4135 is a high linearity, UltraCMOS™ passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a

Contextual Info: Product Specification PE4134 High Linearity Quad MOSFET Mixer for PCS & 3G BTS Product Description The PE4134 is a high linearity, passive Quad MOSFET Mixer for PCS & 3G Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to

ir21xx

Abstract: DS18xx MC34XXX SP232 regulator 78xx series MC33xxx 63XXX DS12xx Am29Fxxx PLA10
Contextual Info: Back PFC Switch Mode Power Supply 3 1 2 EMI Filter & input rectifier AC in X2 X2 Y2 4 Primary switch Output rectifier & Electrolyte Y2 Y2 5 Voltage sensing DC out Control IC Passive comp. Passive Switch Mode Power Supply – Portfolio EMI Filter Power MOSFET

Contextual Info: V X - n ^ U - X 7 t 7 - MOSFET s t& VX-H SERIES POWER MOSFET O U T L IN E DIM ENSIONS 2SK2190 FP10W50VX2 5 0 0 v 1 0 I ¡¡È fë li a RATINGS Absolute Maximum R atings II Item s n- iE ft sfe Symbol s C onditions + Y* KU' f ^ • V — X D rain -S o u rce Voltage

mrf 510

Abstract: VK200-4B VRF150 60WV MRF 283 J101 0-12V 2204B Unelco j101
Contextual Info: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

MRF 283

Abstract: vrf150
Contextual Info: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

MRF21030

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

TLX8-0300

Abstract: 250 watts amplifier schematic diagram MRF21030 MRF21030S gps transmitter circuit diagram 100 watts amplifier circuit diagram
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Motorola transistors MRF 470

Abstract: motorola mrf MRF21030
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

2n7002 siliconix

Abstract: MRF MOSFET 2N7002 Si3443DV X40435 SI3443 SILICONIX 2N7002
Contextual Info: Application Note AN 182 Using a Multiple Voltage Supervisor for Over and Under Voltage Power Supply Shutdown and Fault Monitoring Author: Carlos Martinez INTRODUCTION Reliable system operation is often dependent on the quality of the power supplied. Supply voltages that are

Motorola transistors MRF 470

Abstract: MRF MOSFET MRF21030 MRF FM amplifier 400S MRF21030R3 MRF21030SR3
Contextual Info: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

Motorola transistors MRF 470

Abstract: motorola mrf TLX8-0300 MRF21030 400S MRF21030R3 MRF21030SR3 Motorola transistors MRF
Contextual Info: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21030R3 MRF21030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

motorola mrf

Abstract: Motorola transistors MRF 470 mrf 328 MRF21030 mrf 406 application circuit 305 Power Mosfet MOTOROLA Motorola transistors MRF mrf 510 T 2140 MRF21030S
Contextual Info: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

mosfet 2n7002

Abstract: MRF high power transistor MRF MOSFET 2n7002 siliconix 2N7002 AN182 Si3443DV X40435 lv3f
Contextual Info: Using a Multiple Voltage Supervisor for Over and Under Voltage Power Supply Shutdown and Fault Monitoring Application Note April 26, 2005 AN182.0 Author: Carlos Martinez Introduction Reliable system operation is often dependent on the quality of the power supplied. Supply voltages that are too low can

motorola MRF

Abstract: Motorola transistors MRF 470 MRF21030
Contextual Info: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

250 watts amplifier schematic diagram

Abstract: NI-400 Motorola transistors MRF MRF21030S MRF21030
Contextual Info: MOTOROLA Order this document by MRF21030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030R3 MRF21030S MRF21030SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

AN4001

Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
Contextual Info: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at

Contextual Info: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC GaAs POWER AMPLIFIER SUPPORT IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This

mc331694

Abstract: mesfet datasheet by motorola DCS1800 MC33169 MMBD701 MMSF4N01HD MRFIC0913 MRF transistor
Contextual Info: Order this document by MC33169/D MC33169 GaAs Power Amplifier Support IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand–held telephones such as GSM and PCS. This device provides negative voltages for full depletion of Enhanced MESFETs as well as a