MRF100 Search Results

MRF1004MA

Abstract: TACAN TACAN 41 J295
Contextual Info: MOTOROLA Order this document by MRF1004MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1004MA Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

MRF1002MB

Abstract: TACAN TACAN transistor
Contextual Info: MRF1002MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL A The ASI MRF1002MB is Designed for Class C, DME/TACAN Applications up to 1150 MHz. A .1 0 0 x 4 5 ° 1 FEATURES: C 3 B 4 • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz

MRF1004MB

Abstract: TACAN
Contextual Info: MRF1004MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1004MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. PACKAGE STYLE .280 4L PILL A B FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz

motorola rf Power Transistor t 228

Contextual Info: MOTOROLA Order this document by MRF10031/D SEMICONDUCTOR TECHNICAL DATA Microwave Long Pulse Power Transistor MRF10031 Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc

j325

Abstract: erie redcap capacitors MRF1002MA MRF1002MB
Contextual Info: MOTOROLA Order this document by MRF1002MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1002MA MRF1002MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

MRF1004MA

Abstract: TACAN TACAN transistor
Contextual Info: MRF1004MA NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz

RF power transistors with s-parameters

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1000MA MRF1000MB The RF Line M icrowave Pulse Power Transistors . . . designed for Class A and AB common emitter amplifier applications in the low-power stages of IFF, DME, TACAN, radar transmitters, and CW systems.

D10N2

Abstract: marking dC
Contextual Info: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak

MRF1008MC

Contextual Info: IS E 3 I t3ti75SM GGfiTTflM 4 | MOTORCLA SC XSTRS/R F MOTOROLA SEM ICO NDUCTOR MRF1008MA MRF1008MB MRF1008MC TECHNICAL DATA The R F L in e 8.0 W P E A K 9 6 0 -1 2 1 5 M H z MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS N P N S IL IC O N . . . design ed for C la ss B and C com m on-base amplifier applications

MRF1000MA

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1000MA MRF1OOOMB . . . d e s ig n e d fo r C la ss A a n d A B co m m o n e m itte r a m p lifie r a p p lic a tio n s in the lo w -p o w e r sta g e s of IFF, D M E , T A C A N , ra d a r tra n sm itte rs, a n d C W s yste m s.

Contextual Info: MOTOROLA SEMICONDUCTOR MRF1000MA MRF1000MB TECHNICAL DATA The RF Line 0 .7 W CLASS A/AB MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS . . d e s ig n e d fo r C lass A and A 8 c o m m o n e m itte r a m p lifie r a p p lic a tio n s in th e lo w -p o w e r s ta g e s of IFF. D M E , T A C A N , ra d a r

376B

Abstract: MRF10031 motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRF10031/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10031 Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc

MRF1000MB

Abstract: Common emitter amplifier 053007
Contextual Info: MRF1000MB Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960–1215 MHz, 18V Features • • • • • • • • M/A-COM Products Released - Rev. 053007 Product Image Guaranteed performance @ 1090 MHz, 18 Vdc — Class A Output power: 0.2W

MRF10031

Contextual Info: MRF10031 Microwave Power Silicon NPN Transistor 30W peak , 960–1215MHz, 36V M/A-COM Products Released - Rev. 05.30.07 Features • • • • • • • • Guaranteed performance @ 960-1215MHz, 36Vdc Output power: 30W peak Minimum gain: 9.0dB min., 9.5dB typ.

MRF10005

Abstract: motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRF10005/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high

common base amplifier

Abstract: motorola rf device
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10031 Designed for 960-1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode-S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc

40WPK

Contextual Info: 12E D I t>3ti725M GQflT'IflG 1 | MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR MRF1004MA MRF1004MB MRF1004MC TECHNICAL DATA T h e R F L in e 4.0 W MICROWAVE PULSE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS . . . designed for Class B and C common base amplifier applications

OJ316

Abstract: MRF1000MA
Contextual Info: 15E D I b3b?Z54 □ 00?ci7E fl | MOTOROLA SC MOTOROLA XSTRS/R SEM ICONDUCTOR MRF1000MA MRF1000MB MRF1000MC TECHNICAL DATA T h e R F L in e 0.7 W CLASS A/AB MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS . . . designed for C la ss A and A B com m on emitter amplifier

MRF10005

Contextual Info: Order this document by MRF10005/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high

class d amp ic

Abstract: 2N3906 MOTOROLA MRF1000 MRF1000MB 2N3906 J500
Contextual Info: MOTOROLA Order this document by MRF1000MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1000MB Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.

J524

Abstract: J634 transistor z9
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10031 Designed for 960 – 1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc

Q11K1

Contextual Info: MOTOROLA Order this document by MRF1000MB/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistors MRF1000MB Designed for Class A and AB common emitter amplifier applications in the low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.

Contextual Info: MOTOROLA Order this document by MRF10005/D SEMICONDUCTOR TECHNICAL DATA Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high

336E-01

Contextual Info: Order this data sheet by MRF10005H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10005H* Microwave Power Transistor 5 Watt NPN 960-1215 MHz Designed for CW and long pulsed common base amplifiers. C P liO Guaranteed Performance at 1215 MHz - Output Power = 5 Watts CW