MRF17 Search Results

MRF173

Contextual Info: MRF173 RF POWER FET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF173 is Designed for wideband large-signal output and driver stages up to 200 MHz frequency range. PACKAGE STYLE .500 4L FLG B FEATURES: .112 x 45° A S • PG = 11 dB Min. at 150 MHz • 30:1 Load VSWR Capability

Mrf175gu

Abstract: RF Power Field-Effect Transistor,
Contextual Info: MRF175GU RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF175GU is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. MAXIMUM RATINGS ID 26 A VDSS 65 V PDISS 400 W @ TC = 25 OC

J120 MOSFET

Abstract: J115 mosfet AN211A MRF175LU VK200 MOSFET J140
Contextual Info: Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

SU 179 transistor

Contextual Info: MOTOROLA O rder this docum ent by M RF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N -C H A N N E L BROADBAND RF POW ER M OSFET Designed for broadband commercial and military applications up to 200 MHz

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull

RF MOSFET

Abstract: MRF173 MRF173CQ FML C16
Contextual Info: ^s.mi'Con.dacto'i ^P , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field Effect Transistors MRF173 MRF173CQ N-Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz

Contextual Info: , L na. l£i±£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull

MOSFET TEST SIMPLE Procedures

Abstract: mosfet HF amplifier Simple test MOSFET Procedures AN211A MRF175LU hf amplifier 100w 100W zener diode mosfet vhf power amplifier
Contextual Info: MRF175LU The RF MOSFET Line 100W, 400MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

"RF MOSFET"

Abstract: all mosfet vhf power amplifier ELECTRONIC data sheet AN211A MRF176GU MRF176GV rf push pull mosfet power amplifier application MOSFET transmitters fm
Contextual Info: MRF176GU MRF176GV The RF MOSFET Line 200/150W, 500MHz, 50V M/A-COM Products Released - Rev. 07.07 Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state

VK200 INDUCTOR

Abstract: inductor vk200
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF174 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

VK200 INDUCTOR

Abstract: inductor vk200 VK200 inductor of high frequencies
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

MRF176

Abstract: VK200 inductance
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF176GV MRF176GU The RF MOSFET Line RF P ow er Field E ffe c t Transistors N-Channel Enhancement-Mode . . . designed fo r broadband com m ercial and m ilita ry app licatio n s using push pull circuits at frequencies to 500 MHz. The high pow er, high gain and broadband perform ance of

0400X0

Contextual Info: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M RF175GV MRF175GU The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode . . . designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of

Mosfet J49

Abstract: MRF171 MRF171A VK200 ADC 0824
Contextual Info: Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz

alc 885

Abstract: "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200
Contextual Info: Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz

MRF177

Abstract: 1N5347B transistor RF S-parameters
Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull

MRF172

Contextual Info: MRF172 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF172 is Designed for wideband large-signal output and driver stages in the 2.0-200 MHz frequency range. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: FULL R • PG = 10 dB Min. at 150 MHz

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF171 TMOS RF FET N-Channel Enhancement Mode DESCRIPTION: MRF171 is a gold metallized N-Channel Enhancement mode MOSFET, intended for use in 28 VDC

MRF173

Contextual Info: MRF173 RF POWER FET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF173 is Designed for wideband large-signal output and driver stages up to 200 MHz frequency range. PACKAGE STYLE .380 4L FLG B FEATURES: .112 x 45° A S • PG = 11 dB Min. at 150 MHz • 30:1 Load VSWR Capability

Contextual Info: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

MRF173

Contextual Info: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 200 MHz

"RF MOSFETs"

Abstract: AN211A motorola diode 8296 AN721 1N5925A MRF173CQ VK200
Contextual Info: Order this document by MRF173CQ/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF173CQ N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of

741 datasheet motorola

Abstract: MRF173 "RF MOSFETs" zener motorola 1N5925A AN211A AN721 VK200 0840 057
Contextual Info: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz