MRF31 Search Results

transistor MRF317

Abstract: atc 1117 case 316-01 RF POWER TRANSISTOR NPN mrf317 8w RF POWER TRANSISTOR NPN vk200 J102 MRF317 1117 atc
Contextual Info: Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

transistor MRF317

Abstract: MRF317 mrf317 datasheet RF POWER TRANSISTOR NPN mrf317 J102 VK200 mrf317" "100 6W" motorola rf Power Transistor mrf317
Contextual Info: MOTOROLA Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF317 . . . designed primarily for wideband large–signal output amplifier stages in 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

VK200 FERRITE

Abstract: VK200-20/4B vk200 vk200 ferrite bead MRF313 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ vk200-20 FERROXCUBE VK200 CASE 305A-01 vk200* FERROXCUBE
Contextual Info: Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —

MRF314

Contextual Info: MRF314 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF314 is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L FLG FEATURES: • PG = 10 dB min. at 30 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold Metalization System

MRF315A

Contextual Info: MRF315A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF315A is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: • PG = 9.0 dB min. at 45 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold Metalization System

MRF315

Abstract: mrf315a
Contextual Info: MOTOROLA SEMICONDUCTOR MRF315 MRF315A TECHNICAL DATA The RF Line 45 W - 3 0-2 0 0 MHz RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS N P N S IL IC O N . . . designed p r im a r ily fo r w id e b a n d large-signal o u tp u t a m p lifie r stages in th e 3 0 —2 0 0 M H z fre q u e n c y range.

MRF317

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF317 The RF Line 100 W - 3 0 - 2 0 0 MHz NPN SILICO N RF POWER TRANSISTO R C O N TR O LLED Q BROADBAND RF POWER TRANSISTO R . . . d e s ig n e d p r im a r ily f o r w id e b a n d la rg e sig n a l o u t p u t a m p lif ie r

MRF317

Abstract: transistor MRF317 mrf317" RF POWER TRANSISTOR NPN mrf317
Contextual Info: MRF317 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF317 is Designed for PACKAGE STYLE .500 6L FLG Class C, 28 V High Band Applications up to 200 MHz. A C 1 3 2x Ø N FEATURES: F U LL R D • Internal Input Matching Network • PG = 9.0 dB at 100 W/150 MHz

MRF3105

Abstract: MRF3106 MRF3104
Contextual Info: Order this document by MRF3104/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF3104 MRF3105 MRF3106 Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 MRF3105

MRF313

Contextual Info: MRF313 The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • • • M/A-COM Products Released - Rev. 07.07 Product Image Specified 28 V, 400 MHz characteristics —

RF3104

Abstract: F3106
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF3104 MRF3105 MRF3106 M icrowave Linear Power Transistors • D e sig n e d fo r C la ss A, C o m m o n E m itte r L in e a r P o w e r A m p lifie rs. • S p e cifie d 20 Volt, 1.6 G H z C h a ra cte ristics:

vk200-20

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MRF313 . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —

56590653B

Abstract: MRF316
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF316 . . . designed primarily for wideband large-signal output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts

MRF314A

Abstract: MRF314
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF314 MRF314A The RF Line 30 W —3 0 -2 0 0 MHz RF P O W E R N P N S IL IC O N R F P O W E R T R A N S IS T O R S T R A N S IS T O R S NPN S IL IC O N . . . designed p rim a rily fo r w id e b a n d large-signal d riv e r and o u tp u t

MRF313

Contextual Info: MRF313 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF313 is Designed for wide band Amplifier Applications up to 400 MHz. PACKAGE STYLE .200" 4L PILL FEATURES: • PG = 15 dB min. at 1.0 W/ 400 MHz • Common Emitter for Improved Stability • Omnigold Metalization System

Contextual Info: MOTOROLA Order this document by MRF3104/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF3104 MRF3105 MRF3106 Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics:

Contextual Info: MRF316 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)65 I(C) Max. (A)9.0 Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.10 h(FE) Max. Current gain.80

vk200 coil

Abstract: jmc 5501 MRF315 VK-200-19 ATC - Semiconductor Devices vk200 25CC
Contextual Info: MOTOROLA SC XSTRS/R F b' l E b3b?ES4 D lQ D m S 3ÖT » IMOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF315 The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large-signal output amplifier stages in the 30 to 200 MHz frequency range.

RF POWER TRANSISTOR NPN mrf317

Abstract: transistor MRF317 MRF317 transistor npn 100w amplifier mrf317 datasheet ADVANCED POWER TECHNOLOGY EUROPE npn 100w npn 28v 100w amplifier
Contextual Info: MRF317 The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • • • • • • • Guaranteed performance at 150 MHz, 28 Vdc Output power = 100 W

MRF316

Abstract: CASE316-01
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF316 T h e R F Line 8 0 W - 3 0 -2 0 0 M H z C O NTRO LLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p r im a r ily fo r w id e b a n d N P N S IL IC O N large-signa! o u tp u t a m p lifie r

56590653B

Abstract: AN 240 Motorola 2305 transistor MRF316 Motorola MRF316
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF316 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 3 0 -2 0 0 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 W atts

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF3104 MRF3105 MRF3106 The RF Line M icrowave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 Output Power Power Gain

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF313 The RF Line NPN Silicon High-Frequency TVansistor . . . designed for wideband amplifier, driver or oscillator applications in military, 1.0 W, 400 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON mobile, and aircraft radio.

mrf3163

Contextual Info: MOTOROLA Order this document by MRF316/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor MRF316 . . . designed primarily for wideband large–signal output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc