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Advanced Semiconductor Inc MRF557 RF Bipolar Transistors RF Transistor
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Mouser Electronics	MRF557		65			1 $4.01 10 $3.37 100 $2.72 1000 $2.07 10000 $1.95	Buy Now
Advanced Semiconductor Inc MRF557T RF Bipolar Transistors RF Transistor
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Mouser Electronics	MRF557T					1 $4.01 10 $3.37 100 $2.72 1000 $2.07 10000 $1.95	Get Quote
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Chip 1 Exchange	MRF557MT		13,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Semiconductor Products MRF557MT INSTOCK
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Chip 1 Exchange	MRF557MT		7,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MRF557 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
MRF557	Advanced Power Technology	RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR	Original	PDF
MRF557	Microsemi	Bipolar/LDMOS Transistor	Original	PDF
MRF557	Motorola	RF LOW POWER TRANSISTOR NPN SILICON	Original	PDF
MRF557	Motorola	European Master Selection Guide 1986	Scan	PDF
MRF557	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MRF557G	Advanced Power Technology	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS	Original	PDF

MRF557 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AN938 Abstract: motorola AN938 motorola rf Power Transistor MRF557 MRF557/D Text: MOTOROLA Order this document by MRF557/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF557 Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics	Original	PDF	MRF557/D MRF557 MRF557/D* AN938 motorola AN938 motorola rf Power Transistor MRF557 MRF557/D
BFR91 transistor Abstract: 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB	Original	PDF	MRF557 BFR90 MRF545 MRF544 MRF557 BFR91 transistor 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96
MRF557G Abstract: mrf557 2N5179 2N4427 2N5109 2N6255 MRF4427 MRF553 MRF607 mrf581a Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF557G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics	Original	PDF	MRF557 MRF557G MRF557G mrf557 2N5179 2N4427 2N5109 2N6255 MRF4427 MRF553 MRF607 mrf581a
Untitled Abstract: No abstract text available Text: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	PDF	MRF557 MRF545 MRF544
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF557G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics	Original	PDF	MRF557 MRF557G
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB	Original	PDF	MRF557
2N4427 Abstract: 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF557 MRF5943C MRF607 Text: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	PDF	MRF557 MRF951 MRF571 BFR91 BFR90 MRF545 MRF544 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF557 MRF5943C MRF607
MRF581G Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581 Text: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA	Original	PDF	MRF581 MRF581G MRF581A MRF581AG 2N6255 2N5179 MRF581G MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	PDF	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
2N4427 Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427 Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39	Original	PDF	2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
MHW707-2 Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861 Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar	Original	PDF	714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
2n4427 MOTOROLA Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz	Original	PDF	2N4427 To-39 BFR91 BFR90 MRF545 MRF544 MSC1301 2n4427 MOTOROLA motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
MRF586 Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA	Original	PDF	MRF517 To-39 MRF571 BFR91 BFR90 MRF545 MRF544 MRF517 MRF586 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904
MRF660 Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040	Original	PDF	2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

MRF553G Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics	Original	PDF	MRF553 MRF553G MRF553G 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	PDF	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
s-parameter 2N4427 Abstract: S-parameter 2N5179 BFR91 Text: MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix–Tape and Reel, 500 units	Original	PDF	MRF5943, 300MHz TempeMRF545 MRF544 s-parameter 2N4427 S-parameter 2N5179 BFR91
BFR91 Abstract: 2N4427 equivalent bfr91 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz	Original	PDF	BFR91 Vdc00 MRF571 BFR90 MRF545 MRF544 MSC1308 BFR91 2N4427 equivalent bfr91 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
MRF559 Abstract: mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607 MSC1317 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB	Original	PDF	MRF559 2N5109 2N4427 MRF4427, MSC1317 MRF559 mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607
2nc55 Abstract: tp 806 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF557 D e s ig n e d p rim a rily fo r w id e b a n d la rg e s igna l p re d riv e r sta g e s in the 800 MHz frequency range. • • Specified @ 12.5 V, 870 MHz Characteristics	OCR Scan	PDF	MRF557 MRF557 2nc55 tp 806
MRF557 Abstract: No abstract text available Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line NPN Silicon RF Low Power TVansistor . . . designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W	OCR Scan	PDF	MRF557 MRF557
motorola AN938 Abstract: MRF567 mrf56 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line 1.5 W 870 M H z RF LOW POWER TRANSISTOR NPN SILICON RF LOW POWER TRANSISTOR N P N SILICON . . . d e s ig n e d p rim a rily fo r w id e b a n d large s ig n a l p redrive r stages in the 800 M H z fre q u en cy range.	OCR Scan	PDF	MRF557 motorola AN938 MRF567 mrf56
transistor j37 Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by MRF557/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF557 D esigned p rim a rily for w id e b a n d large sig n a l p re d riv e r s ta g e s in th e 800 MHz frequency range. • Specified a 12.5 V, 870 MHz Characteristics	OCR Scan	PDF	MRF557/D MRF557 transistor j37
Motorola transistors MRF646 Abstract: Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF754 MRF846 MRF839 MRF515 MRF644 Text: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued <C^, TO-22Q 333-03 UHF Applications (continued) 317-01 407-512 MHz, UHF FM Transistors Higher power output devices in this UHF power transistor series feature internally input-matched construction, are designed	OCR Scan	PDF	MRF750 05A-0Ã MRF752 MRF754 MRF627 MRF559 MRF581 MRF515 Motorola transistors MRF646 Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF846 MRF839 MRF644

MRF557 Search Results

MRF557 Price and Stock

Advanced Semiconductor Inc MRF557

Advanced Semiconductor Inc MRF557T

Others MRF557MT

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MRF557 Datasheets (6)

MRF557 Datasheets Context Search

AN938

BFR91 transistor

MRF557G

Untitled

Untitled

Untitled

2N4427

MRF581G

MC68B21CP

2N4427

MHW707-2

2n4427 MOTOROLA

MRF586

MRF660

MRF553G

2SC3355 SPICE MODEL

s-parameter 2N4427

BFR91

MRF559

2nc55

MRF557

motorola AN938

transistor j37

Motorola transistors MRF646